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DISCRETE SEMICONDUCTORS
DATA SH EET
KM110B/2
Magnetic field sensor
Preliminary specification
File under Discrete Semiconductors, SC17
Philips Semiconductors
November 1994
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Philips Semiconductors Preliminary specification
Magnetic field sensor KM110B/2
DESCRIPTION
The KM110B/2 is a sensitive magnetic field sensor,
employing the magnetoresistive effect in thin-film
permalloy. A Ferroxdure FXD100 magnet mounted on the
back of the sensor package provides an auxiliary field of
3.6 kA/m in the x-direction of the sensor.
Typical applications for the KM110B/2 are current
measurement, linear position measurement, rotational
speed detection of magnetic pole wheels as well as
magnetic field measurement. The sensor can be operated
at any frequency between DC and 1 MHz.
PINNING
PIN SYMBOL DESCRIPTION
1+V
O
output voltage
2 GND ground
3 −V
4+V
O
CC
output voltage
supply voltage
Marking: KMZ10B PHDxx.
x
y
1234
Fig.1 Simplified outline.
MLB874
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
T
H
CC
bridge
y
DC supply voltage − 5 − V
bridge operating temperature −40 − 150 °C
magnetic field strength −2.2 − +2.2 kA/m
S sensitivity − 3.6 −
R
V
bridge
offset
bridge resistance 1.6 2.1 2.6 kΩ
offset voltage −0.5 − +0.5 mV/V
CIRCUIT DIAGRAM
MLB875
handbook, full pagewidth
43 2 1
mV V⁄
----------------kA m⁄
V
–V
CC
O
Fig.2 Simplified circuit diagram.
November 1994 2
GND
+V
O