Philips KM110B-2 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

KM110B/2

Magnetic field sensor

Preliminary specification
File under Discrete Semiconductors, SC17

Philips Semiconductors

November 1994

Philips Semiconductors Preliminary specification

Magnetic field sensor KM110B/2

DESCRIPTION

The KM110B/2 is a sensitive magnetic field sensor,
employing the magnetoresistive effect in thin-film
permalloy. A Ferroxdure FXD100 magnet mounted on the
back of the sensor package provides an auxiliary field of

3.6 kA/m in the x-direction of the sensor.
Typical applications for the KM110B/2 are current

measurement, linear position measurement, rotational
speed detection of magnetic pole wheels as well as
magnetic field measurement. The sensor can be operated
at any frequency between DC and 1 MHz.

PINNING

PIN SYMBOL DESCRIPTION

1+V

O

output voltage
2 GND ground
3 −V
4+V

O
CC

output voltage

supply voltage

Marking: KMZ10B PHDxx.

x

y

1234

Fig.1 Simplified outline.

MLB874

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V
T
H

CC
bridge
y

DC supply voltage − 5 − V
bridge operating temperature −40 − 150 °C

magnetic field strength −2.2 − +2.2 kA/m
S sensitivity − 3.6 −
R

V

bridge
offset

bridge resistance 1.6 2.1 2.6 kΩ

offset voltage −0.5 − +0.5 mV/V

CIRCUIT DIAGRAM

MLB875

handbook, full pagewidth

43 2 1

mV V⁄

----------------­kA m⁄

V

–V

CC

O

Fig.2 Simplified circuit diagram.

November 1994 2

GND

+V

O