Philips JC556 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
JC556; JC557; JC558
PNP general purpose transistors
Product specification
Supersedes data of 1997 Jul 02
1999 Apr 27
Philips Semiconductors Product specification
PNP general purpose transistors JC556; JC557; JC558
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: JC546, JC547 and JC548.
handbook, halfpage
1
2
3
MAM285
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
JC556 −−80 V
JC557 −−50 V
JC558 −−30 V
V
CEO
collector-emitter voltage open base
JC556 −−65 V
JC557 −−45 V
JC558 −−30 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 27 2
Philips Semiconductors Product specification
PNP general purpose transistors JC556; JC557; JC558
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 250 K/W
collector cut-off current IE= 0; VCB= −30 V −−1−15 nA
I
= 0; VCB= −30 V; Tj= 150 °C −−−4µA
E
emitter cut-off current IC= 0; VEB= −5V −−100 nA
DC current gain IC= −2 mA; VCE= −5 V; see Fig.2
JC556B; JC557B; JC558B 220 − 475
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−60 −300 mV
I
= −100 mA; IB= −5mA −−180 −650 mV
C
base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA; note 1 −−750 − mV
I
= −100 mA; IB= −5 mA; note 1 −−930 − mV
C
base-emitter voltage IC= −2 mA; VCE= −5 V; note 2 −600 −650 −750 mV
I
= −10 mA; VCE= −5 V; note 2 −−−820 mV
C
collector capacitance IE=ie= 0; VCE= −10 V; f = 1 MHz − 4 − pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
= −200 µA; VCE= −5 V; RS=2kΩ;
C
−−10 dB
f = 1 kHz; B = 200 Hz
Notes
1. V
decreases by about −1.7 mV/K with increasing temperature.
BEsat
2. VBE decreases by about −2 mV/K with increasing temperature.
1999 Apr 27 3
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