Philips JC549, JC550 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
JC549; JC550
NPN general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 08
Philips Semiconductors Product specification
NPN general purpose transistors JC549; JC550
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 base
2 collector
APPLICATIONS
3 emitter
• General purpose switching and amplification
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: JC559 and JC560.
handbook, halfpage
1
2
3
MAM259
2
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
JC549 − 30 V
JC550 − 50 V
V
CEO
collector-emitter voltage open base
JC549 − 30 V
JC550 − 45 V
I
P
h
f
CM
tot
FE
T
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= 2 mA; VCE= 5 V 200 800
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 − MHz
1997 Jul 08 2
Philips Semiconductors Product specification
NPN general purpose transistors JC549; JC550
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
JC549 − 30 V
JC550 − 50 V
collector-emitter voltage open base
JC549 − 30 V
JC550 − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Jul 08 3
Loading...