Philips JC549, JC550 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D186

JC549; JC550

NPN general purpose transistors

Product specification

1997 Jul 08

Supersedes data of September 1994

File under Discrete Semiconductors, SC04

Philips Semiconductors	Product specification
NPN general purpose transistors	JC549; JC550

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 45 V).

APPLICATIONS

∙General purpose switching and amplification

∙Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC559 and JC560.

QUICK REFERENCE DATA

PINNING

PIN								DESCRIPTION
1		base
2		collector
3		emitter
handbook, halfpage1	2
	2
	3									1
	3
										MAM259
Fig.1	Simplified outline (TO-92; SOT54)
	and symbol.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	JC549		−	30	V
	JC550		−	50	V
VCEO	collector-emitter voltage	open base
	JC549		−	30	V
	JC550		−	45	V
ICM	peak collector current		−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C	−	500	mW
hFE	DC current gain	IC = 2 mA; VCE = 5 V	200	800
fT	transition frequency	IC = 10 mA; VCE = 5 V; f = 100 MHz	100	−	MHz

1997 Jul 08

2

Philips Semiconductors						Product specification
NPN general purpose transistors					JC549; JC550
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER		CONDITIONS	MIN.		MAX.	UNIT
VCBO	collector-base voltage		open emitter
	JC549			−		30	V
	JC550			−		50	V
VCEO	collector-emitter voltage		open base
	JC549			−		30	V
	JC550			−		45	V
VEBO	emitter-base voltage		open collector	−		5	V
IC	collector current (DC)			−		100	mA
ICM	peak collector current			−		200	mA
IBM	peak base current			−		200	mA
Ptot	total power dissipation		Tamb ≤ 25 °C; note 1	−		500	mW
Tstg	storage temperature			−65		+150	°C
Tj	junction temperature			−		150	°C
Tamb	operating ambient temperature			−65		+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	250	K/W
Note

1. Transistor mounted on an FR4 printed-circuit board.

1997 Jul 08

3