Philips JC548, JC547, JC546 Datasheet
DATA SH EET
Product specification
Supersedes data of 1997 Mar 14
1999 Apr 27
DISCRETE SEMICONDUCTORS
JC546; JC547; JC548
NPN general purpose transistors
ook, halfpage
M3D186
1999 Apr 27 2
Philips Semiconductors Product specification
NPN general purpose transistors JC546; JC547; JC548
FEATURES
• Low current max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: JC556, JC557 and JC558.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM259
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
JC546 − 80 V
JC547 − 50 V
JC548 − 30 V
V
CEO
collector-emitter voltage open-base
JC546 − 65 V
JC547 − 45 V
JC548 − 30 V
V
EBO
emitter-base voltage open collector
JC546; JC547 − 6V
JC548 − 5V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 500 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 27 3
Philips Semiconductors Product specification
NPN general purpose transistors JC546; JC547; JC548
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Notes
1. V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 0.25 K/mW
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB=30V −−15 nA
I
E
= 0; VCB= 30 V; Tj= 150 °C −−5µA
I
EBO
emitter cut-off current IC= 0; VEB=5V −−100 nA
h
FE
DC current gain IC=10µA; VCE=5V;
see Figs 2 and 3
JC547A − 90 −
JC546B; JC547B; JC548B − 150 −
DC current gain I
C
= 2 mA; VCE=5V;
see Figs 2 and 3
JC547A 110 180 220
JC546B; JC547B; JC548B 200 290 450
V
CEsat
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA − 90 250 mV
I
C
= 100 mA; IB=5mA − 200 600 mV
V
BEsat
base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA; note 1 − 700 − mV
I
C
= 100 mA; IB= 5 mA; note 1 − 900 − mV
V
BE
base-emitter voltage IC= 2 mA; VCE= 5 V; note 2 580 660 700 mV
I
C
= 10 mA; VCE= 5 V; note 2 −−770 mV
C
c
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2.5 − pF
C
e
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 11.5 − pF
f
T
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
F noise figure I
C
= 200 µA; VCE=5V; RS=2kΩ;
f = 1 kHz; B = 200 Hz
− 210dB
Loading...