Product specification
File under Integrated Circuits, IC04
January 1995
Philips SemiconductorsProduct specification
Frequency synthesizer
DESCRIPTION
The HEF4750V frequency synthesizer is one of a pair of
LOCMOS devices, primarily intended for use in
high-performance frequency synthesizers, e.g. in all
communication, instrumentation, television and broadcast
applications. A combination of analogue and digital
techniques results in an integrated circuit that enables high
performance. The complementary device is the universal
divider type HEF4751V.
Together with a standard prescaler, the two LOCMOS
integrated circuits offer low-cost single loop synthesizers
with full professional performance. Salient features offered
(in combination with HEF4751V) are:
• Wide choice of reference frequency using a single
crystal.
frequency offsets
ROM compatible
fractional channel capability.
1
• Programme range 6
3 decades of prescaler control.
• Division range extension by cascading.
• Built-in phase modulator.
• Fast lock feature.
• Out-of-lock indication.
• Low power dissipation and high noise immunity.
⁄2 decades, including up to
HEF4750V
LSI
SUPPLY VOLTAGE
RATINGRECOMMENDED OPERATING
−0,5 to +159,5 to 10,5 V
APPLICATION INFORMATION
Some examples of applications for the HEF4750V in
combination with the HEF4751V are:
• VHF/UHF mobile radios.
• HF s.s.b. transceivers.
• Airborne and marine communications and navaids.
• Broadcast transmitters.
• High quality radio and television receivers.
• High performance citizens band equipment.
• Signal generators.
January 19952
Philips SemiconductorsProduct specification
Frequency synthesizer
HEF4750V
PINNING
Rphase comparator input, reference
Vphase comparator input
STBstrobe input
TCAtiming capacitor C
TCBtiming capacitor C
TCCtiming capacitor C
TRAbiasing pin (resistor R
PC
PC
1
2
analogue phase comparator output
digital phase comparator output
MODphase modulation input
OLout-of-lock indication
OSCreference oscillator/buffer input
XTALreference oscillator/buffer output
A
to A
0
NS
, NS1programming inputs, prescaler
0
programming inputs/programmable divider
9
OUTreference divider output
pin
A
pin
B
pin
C
)
A
LSI
Fig.1 Pinning diagram.
HEF4750VD(F):28-lead DIL; ceramic (cerdip)
(SOT135)
( ): Package Designator North America
January 19953
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oscillator and reference divider. These functions are described separately.
HEF4750V
LSI
Philips SemiconductorsProduct specification
Frequency synthesizer
FUNCTIONAL DESCRIPTION
Phase comparator 1
Phase comparator 1 (PC1) is built around a SAMPLE and
HOLD circuit. A negative-going transition at the V-input
causes the hold capacitor (C
a specified delay, caused by the Phase Modulator by
means of an internal V’ pulse, it produces a positive-going
ramp. A negative-going transition at the R-input terminates
) to be discharged and after
A
HEF4750V
LSI
the ramp. Capacitor C
has attained. Via an internal sampling switch this voltage
is transferred to CCand in turn buffered and made
available at output PC1.
If the ramp terminates before an R-input is present, an
internal end of ramp (EOR) signal is produced.
These actions are illustrated in Fig.3.
holds the voltage that the ramp
A
Fig.3 Waveforms associated with PC1.
The resultant phase characteristic is shown in Fig.4.
January 19955
Philips SemiconductorsProduct specification
Frequency synthesizer
Fig.4 Phase characteristic of PC1.
PC1 is designed to have a high gain, typically 3200 V/cycle
(at 12,5 kHz). This enables a low noise performance.
Phase comparator 2
Phase comparator 2 (PC2) has a wide range, which
enables faster lock times to be achieved than otherwise
would be possible. It has a linear ± 360° phase range,
which corresponds to a gain of typically 5 V/cycle.
HEF4750V
LSI
This digital phase comparator has three stable states:
• reset state,
• V’ leads R state,
• R leads V’ state.
Fig.5 State diagram of PC2.
Output PC2produces positive or negative-going pulses
with variable width; they depend on the phase relationship
of R and V’. The average output voltage is a linear function
of the phase difference. Output PC2remains in the high
impedance OFF-state in the region in which PC1 operates.
The resultant phase characteristic is shown in Fig.6.
Conversion from one state to another takes place
according to the state diagram of Fig.5.
January 19956
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