Philips HEF4737V Technical data

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INTEGRATED CIRCUITS
DATA SH EET
For a complete data sheet, please also download:
The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC
The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC
HEF4737B HEF4737V LSI
Product specification File under Integrated Circuits, IC04
January 1995
Philips Semiconductors Product specification
HEF4737B
Quadruple static decade counters
HEF4737V
DESCRIPTION
The HEF4737B and HEF4737V are static quadruple decade counters for frequencies from 0 to 10 MHz. The counters are supplied with an extra overload flip-flop giving a total count capability of 19 999. The counter has the following inputs and outputs: a count input (CP), an asynchronous reset input (MR), an asynchronous preset input (PL), a transfer input (T), an output enable input (EO) (which controls the BCD outputs), the digit select inputs (SA, SB, SC) (which perform selection of the contents of the latches to the 3-state BCD outputs (O
to O3)), and the
0
carry outputs (CO2to CO5) (which give the carry signals of the decades except from the first decade).
The complementary MOS structure gives the devices very low stand-by and operating dissipation. Operating from a single supply voltage all outputs can drive one standard TTL input without interface circuitry under all specified operating conditions.
The BCD digit outputs are LOCMOS 3-state outputs. The high impedance off-state feature allows common busing of the outputs. The counters are supplied with asynchronous reset and preset to 19 999 facilities making them suitable for counter and time base applications. All carry signals are available except from the first decade.
Schmitt-trigger action in the inputs makes the circuit highly tolerant to slower input rise and fall times.
Recommended supply voltage range for HEF4737B is 3 to 15 V and for HEF4737V is 4,5 to 12,5 V.
HEF4737BP; HEF4737VP(N); 18-lead DIL
plastic (SOT102-1)
HEF4737BD; HEF4737VD(F); 18-lead DIL
ceramic (SOT133B)
( ): Package Designator North America
Fig.1 Pinning diagram.
PINNING
CP count input MR asynchronous reset input PL asynchronous preset input T transfer input S
, SB, S
A
C
digit select inputs EO output enable input O CO
0
to O
to CO
2
3
5
BCD outputs
carry outputs
SUPPLY VOLTAGE
RATING RECOMMENDED
OPERATING
HEF4737B 0,5 to 18 3,0 to 15,0 V HEF4737V 0,5 to 18 4,5 to 12,5 V
FAMILY DATA, I
LIMITS category LSI
DD
See Family Specifications
January 1995 2
Philips Semiconductors Product specification
HEF4737B
Quadruple static decade counters
HEF4737V
Fig.2 Block diagram.
FUNCTIONAL DESCRIPTION Input signals
Count input (CP)
The signal to be counted is applied to this input. When PL and MR are LOW the contents of the counter increments by one at a LOW to HIGH transition of CP.
Reset input (MR)
This is an asynchronous reset. A HIGH level applied to this input will reset the counter to zero independent of the level at the count input and preset input.
January 1995 3
Preset input (PL)
This is an asynchronous preset. When MR is LOW a HIGH at the PL input will preset the counter to 19 999 independent of the level at the count input.
Transfer input (T)
A HIGH level applied to this input allows the information held by the counter to pass to the latches.
Output enable input (EO)
A HIGH level at this input enables the BCD outputs and information can be read out of the latches using the
Philips Semiconductors Product specification
HEF4737B
Quadruple static decade counters
HEF4737V
multiplexer. A LOW level at this input disables the BCD outputs making them floating (high impedance off-state).
Digit select inputs (SA, SB, SC)
S
A
S
B
S
C
L L L selects D1 (LSD) H L L selects D2 L H L selects D3 H H L selects D4 X X H selects D5 (MSD)
Notes
1. H = HIGH state (the more positive voltage)
2. L = LOW state (the less positive voltage)
3. X = state is immaterial
4. When D5 is selected, the contents of D5 is available at O0and O1,O2 and O3are LOW.
5. LSD = least significant divider
6. MSD = most significant divider
Output signals
The carry outputs are active LOW outputs.
Carry output CO
2
When the contents of the first two decades of the counter are both 9 then the CO2output becomes LOW. It remains LOW until the next LOW to HIGH transition of the count input, i.e. until the contents of the first two decades are zero. CO2is LOW when the contents of the counter are: 00 099, 00 199, 00 299 etc.
Carry output CO
3
When the contents of the first three decades of the counter are all 9 then the CO3output becomes LOW. It remains LOW until the next LOW to HIGH transition of the count input, i.e. until the contents of the first three decades are zero. CO3is LOW when the contents of the counter are 00 999, 01 999, 02 999 etc.
Carry output CO
4
When the contents of the first four decades of the counter are all 9 then the CO4output becomes LOW. It remains LOW until the next LOW to HIGH transition of the count input, i.e. until the contents of the first four decades are zero. CO4is LOW when the contents of the counter are 09 999 and 19 999.
The carry signals CO2, CO3and CO4are suppressed while the preset is active. A HIGH to the preset input sets the counter to 19 999 but the carry signals remain HIGH until preset input returns to LOW, then the carry outputs will also become LOW.
Carry output CO
5
When the content of the counter is 10 000 the CO5output becomes LOW. It returns to HIGH when the content of the counter is zero.
Digit outputs (O0to O3)
The digit outputs give the contents of the selected latch. The output is in the form of BCD, positive logic.
January 1995 4
Philips Semiconductors Product specification
HEF4737B
Quadruple static decade counters
HEF4737V
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January 1995 5
Fig.3 Timing diagram.
Philips Semiconductors Product specification
HEF4737B
Quadruple static decade counters
The values given at VDD= 15 V in the following d.c. and a.c. characteristics, are not applicable to the HEF4737V, because of its reduced supply voltage range.
DC CHARACTERISTICS
=0V
V
SS
T
(°C)
amb
V
V
Input leakage
current at 10 V
= 0 or V
I
DD
15 −− −0,3 1 µA
Output (sink) 4,75 0,4 1,6 1,6 1,4 mA
current LOW 10 0,5 I
15 1,5 7,0 6,0 4,0 mA
Output (source) 5 4,6 0,96 0,80 0,65 mA
current HIGH 10 9,5 I
15 13,5 7,0 6,0 4,5 mA
Output (source)
current HIGH 5 2,5 I
3-state output
leakage current 10 V
= 0 or V
O
DD
15 1,6 1,6 12 µA
DD
V
V
OH
V
OL
V
SYMBOL
40 + 25 + 85
MIN. MAX. MIN. MAX. MIN. MAX.
± I
± I
IN
OL
OH
OH
OZ
−− −0,3 1 µA
2,5 2,3 1,7 mA
2,4 2,0 1,6 mA
3,0 2,5 2,0 mA
1,6 1,6 12 µA
HEF4737V
AC CHARACTERISTICS
V
SS
=0V; T
=25°C; CL= 15 pF; input transition times 20 ns
amb
V
DD
V
SYMBOL MIN. TYP. MAX.
TYPICAL EXTRAPOLA TION
FORMULA
Propagation delays
CP O
n
(D1 selected) 10 t
5 320 640 ns 308 ns + (0,24 ns/pF) C
PHL
120 240 ns 125 ns + (0,10 ns/pF) C
HIGH to LOW 15 90 180 ns 86 ns + (0,07 ns/pF) C
5 320 640 ns 296 ns + (0,48 ns/pF) C
LOW to HIGH 10 t
PLH
120 240 ns 110 ns + (0,20 ns/pF) C
15 90 180 ns 82 ns + (0,15 ns/pF) C
CP O
n
(D5 selected) 10 t
5 620 1240 ns 608 ns + (0,24 ns/pF) C
PHL
330 660 ns 325 ns + (0,10 ns/pF) C
HIGH to LOW 15 250 500 ns 246 ns + (0,07 ns/pF) C
5 620 1240 ns 596 ns + (0,48 ns/pF) C
LOW to HIGH 10 t
PLH
330 660 ns 320 ns + (0,20 ns/pF) C
15 250 500 ns 242 ns + (0,15 ns/pF) C
January 1995 6
L L L L L L L L L L L L
Philips Semiconductors Product specification
HEF4737B
Quadruple static decade counters
HEF4737V
CP CO
2
HIGH to LOW 10 t
LOW to HIGH 10 t
Propagation delays
CP CO
5
HIGH to LOW 10 t
LOW to HIGH 10 t
Sn→ O
n
HIGH to LOW 10 t
LOW to HIGH 10 t
TO
n
HIGH to LOW 10 t
LOW to HIGH 10 t
MR O
n
HIGH to LOW 10 t
PL O
n
LOW to HIGH 10 t
MR CO
n
LOW to HIGH 10 t
PL CO
n
HIGH to LOW 10 t
V
DD
V
SYMBOL MIN. TYP. MAX.
TYPICAL EXTRAPOLA TION
FORMULA
5 220 440 ns 208 ns + (0,24 ns/pF) C
PHL
110 220 ns 105 ns + (0,10 ns/pF) C
15 85 170 ns 81 ns + (0,07 ns/pF) C
5 220 400 ns 196 ns + (0,48 ns/pF) C
PLH
110 220 ns 100 ns + (0,20 ns/pF) C
15 85 170 ns 77 ns + (0,15 ns/pF) C
5 350 700 ns 338 ns + (0,24 ns/pF) C
PHL
160 320 ns 155 ns + (0,10 ns/pF) C
15 120 240 ns 116 ns + (0,07 ns/pF) C
5 350 700 ns 326 ns + (0,48 ns/pF) C
PLH
160 320 ns 150 ns + (0,20 ns/pF) C
15 120 240 ns 112 ns + (0,15 ns/pF) C
5 200 400 ns 188 ns + (0,24 ns/pF) C
PHL
80 160 ns 75 ns + (0,10 ns/pF) C
15 55 110 ns 51 ns + (0,07 ns/pF) C
5 200 400 ns 176 ns + (0,48 ns/pF) C
PLH
80 160 ns 70 ns + (0,20 ns/pF) C
15 55 110 ns 47 ns + (0,15 ns/pF) C
5 220 440 ns 208 ns + (0,24 ns/pF) C
PHL
90 180 ns 85 ns + (0,10 ns/pF) C
15 60 120 ns 56 ns + (0,07 ns/pF) C
5 220 440 ns 196 ns + (0,48 ns/pF) C
PLH
90 180 ns 80 ns + (0,20 ns/pF) C
15 60 120 ns 52 ns + (0,15 ns/pF) C
5 490 980 ns 478 ns + (0,24 ns/pF) C
PHL
200 400 ns 195 ns + (0,10 ns/pF) C
15 60 120 ns 56 ns + (0,07 ns/pF) C
5 260 520 ns 236 ns + (0,48 ns/pF) C
PLH
110 220 ns 100 ns + (0,20 ns/pF) C
15 85 170 ns 77 ns + (0,15 ns/pF) C
5 350 700 ns 326 ns + (0,48 ns/pF) C
PLH
160 320 ns 150 ns + (0,20 ns/pF) C
15 120 240 ns 112 ns + (0,15 ns/pF) C
5 350 700 ns 338 ns + (0,24 ns/pF) C
PHL
160 320 ns 155 ns + (0,10 ns/pF) C
15 120 240 ns 116 ns + (0,07 ns/pF) C
L L L L L L
L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L
January 1995 7
Philips Semiconductors Product specification
HEF4737B
Quadruple static decade counters
HEF4737V
V
DD
V
SYMBOL MIN. TYP. MAX.
TYPICAL EXTRAPOLA TION
FORMULA
Output transition 5 35 70 ns 15 ns + (0,40 ns/pF) C
times; any output 10 t
THL
18 36 ns 9 ns + (0,18 ns/pF) C
HIGH to LOW 15 15 30 ns 8 ns + (0,13 ns/pF) C
5 50 100 ns 15 ns + (0,70 ns/pF) C
LOW to HIGH 10 t
TLH
30 60 ns 13 ns + (0,33 ns/pF) C
15 25 50 ns 13 ns + (0,23 ns/pF) C 3-state propagation delays Output disable times
EO O
n
HIGH 10 t
5 60 120 ns
PHZ
35 70 ns
15 25 50 ns
5 60 120 ns
LOW 10 t
PLZ
35 70 ns
15 25 50 ns Output enable times
EO O
n
HIGH 10 t
5 90 180 ns
PZH
40 80 ns
15 30 60 ns
5 90 180 ns
LOW 10 t
PZL
40 80 ns
15 30 60 ns Maximum CP pulse 5 160 80 ns
width; LOW 10 t
WCPL
60 30 ns
15 50 25 ns Minimum MR pulse 5 100 50 ns
width; HIGH 10 t
WMRH
50 25 ns
15 40 20 ns Minimum PL pulse 5 120 60 ns
width; HIGH 10 t
WPLH
60 30 ns
15 50 25 ns Minimum T pulse 5 100 50 ns
width; HIGH 10 t
WTH
40 20 ns
15 36 18 ns Maximum clock 5 3 6 MHz
pulse frequency 10 f
max
8 16 MHz
15 10 20 MHz
L L L L L L
January 1995 8
Philips Semiconductors Product specification
HEF4737B
Quadruple static decade counters
V
DD
V
Dynamic power 5 950 f
dissipation per 10 4 200 f package (P) 15 11 200 f
TYPICAL FORMULA FOR P (µW)
+∑(foCL) × V
i
+∑(foCL) × V
i
+∑(foCL) × V
i
DD DD
DD
2
where
2
fi= input freq. (MHz)
2
fo= output freq. (MHz) C
= load cap. (pF)
L
(f
oCL
= supply voltage (V)
V
DD
) = sum of outputs
HEF4737V
January 1995 9
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