Philips HCMOS Technical data

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INTEGRATED CIRCUITS
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FAMILY SPECIFICATIONS
HCMOS family characteristics
File under Integrated Circuits, IC06
March 1988
HCMOS family characteristics
GENERAL
These family specifications cover the common electrical ratings and characteristics of the entire HCMOS 74HC/HCT/HCU family, unless otherwise specified in the individual device data sheet.
INTRODUCTION
The 74HC/HCT/HCU high-speed Si-gate CMOS logic family combines the low power advantages of the HE4000B family with the high speed and drive capability of the low power Schottky TTL (LSTTL).
The family will have the same pin-out as the 74 series and provide the same circuit functions.
In these families are included several HE4000B family circuits which do not have TTL counterparts, and some special circuits.
The basic family of buffered devices, designated as XX74HCXXXXX, will operate at CMOS input logic levels for high noise immunity, negligible typical quiescent supply and input current. It is operated from a power supply of 2to6V.
FAMILY
SPECIFICATIONS
A subset of the family, designated as XX74HCTXXXXX, with the same features and functions as the “HC-types”, will operate at standard TTL power supply voltage (5 V ± 10%) and logic input levels (0.8 to 2.0 V) for use as pin-to-pin compatible CMOS replacements to reduce power consumption without loss of speed. These types are also suitable for converted switching from TTL to CMOS.
Another subset, the XX74HCUXXXXX, consists of single-stage unbuffered CMOS compatible devices for application in RC or crystal controlled oscillators and other types of feedback circuits which operate in the linear mode.
HANDLING MOS DEVICES
Inputs and outputs are protected against electrostatic effects in a wide variety of device-handling situations. However, to be totally safe, it is desirable to take handling precautions into account (see also
“HANDLING PRECAUTIONS”
).
RECOMMENDED OPERATING CONDITIONS FOR 74HC/HCT
74HC 74HCT
SYMBOL PARAMETER
UNIT CONDITIONS
min. typ. max. min. typ. max.
V V V T T t
r,tf
CC I O amb amb
DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V DC input voltage range 0 V DC output voltage range 0 V
0V
CC
0V
CC
CC CC
V
V operating ambient temperature range 40 +85 40 +85 °C see DC and AC operating ambient temperature range 40 +125 40 +125 °C input rise and fall times except for
Schmitt-trigger inputs
1000
6.0
500 V
6.0 500 ns
400 V
CHAR. per device VCC= 2.0 V
= 4.5 V
CC
= 6.0 V
CC
Note
1. For analog switches, e.g. “4016”, “4051 series”, “4351 series”, “4066” and “4067”, the specified maximum operating supply voltage is 10 V.
March 1988 2
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
RECOMMENDED OPERATING CONDITIONS FOR 74HCU
SYMBOL PARAMETER
74HCU
min. typ. max.
V
CC
V
I
V
O
T
amb
T
amb
DC supply voltage 2.0 5.0 6.0 V DC input voltage range 0 V DC output voltage range 0 V operating ambient temperature range 40 +85 °C see DC and AC operating ambient temperature range 40 +125 °C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
V
CC
±I
IK
±I
OK
±I
O
DC supply voltage 0.5 +7V DC input diode current 20 mA for VI<−0.5 or VI> VCC+ 0.5 V DC output diode current 20 mA for VO<−0.5 or VO> VCC+ 0.5 V DC output source or sink
for 0.5 V < VO< VCC+ 0.5 V
current
standard outputs 25 mA bus driver outputs 35 mA
±I
;
CC
±I
GND
DC VCCor GND current for types with:
standard outputs 50 mA bus driver outputs 70 mA
T
stg
P
tot
storage temperature range 65 +150 °C power dissipation per package for temperature range: 40 to +125 °C
74HC/HCT/HCU plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K
UNIT CONDITIONS
V
CC
V
CC
CHAR. per device
Note
1. For analog switches, e.g. “4016”, “4051 series”, “4351 series”, “4066” and “4067”, the specified maximum operating supply voltage is 11 V.
March 1988 3
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
DC CHARACTERISTICS FOR 74HC
Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER
V
IH
HIGH level input voltage
V
IL
LOW level input voltage
V
OH
HIGH level output voltage
all outputs
V
OH
HIGH level output voltage
standard outputs
V
OH
HIGH level output voltage bus driver outputs
V
OL
LOW level output voltage
all outputs
V
OL
LOW level output voltage
standard outputs
V
OL
LOW level output voltage
bus driver outputs
±I
I
±I
OZ
input leakage current 0.1 1.0 1.0 µA 6.0 V
3-state OFF-state current
I
CC
quiescent supply current
SSI 2.0 20.0 40.0 µA 6.0 V flip-flops 4.0 40.0 80.0 6.0 I MSI 8.0 80.0 160.0 6.0 I LSI 50.0 500 1000 6.0 I
T
amb
(°C)
TEST CONDITIONS
74HC
UNIT
V
CC
(V)
V
I
min. typ. max. min. max. min. max.
1.5 1.2 1.5 1.5 V 2.0
3.15 2.4 3.15 3.15 4.5
4.2 3.2 4.2 4.2 6.0
0.8 0.5 0.5 0.5 V 2.0
2.1 1.35 1.35 1.35 4.5
2.8 1.8 1.8 1.8 6.0
1.9 2.0 1.9 1.9 V 2.0 V
4.4 4.5 4.4 4.4 4.5 I
5.9 6.0 5.9 5.9 6.0 I
3.98 4.32 3.84 3.7 V 4.5 V
5.48 5.81 5.34 5.2 6.0 I
3.98 4.32 3.84 3.7 V 4.5 V
5.48 5.81 5.34 5.2 6.0 I
0 0.1 0.1 0.1 V 2.0 V 0 0.1 0.1 0.1 4.5 I 0 0.1 0.1 0.1 6.0 I
0.15 0.26 0.33 0.4 V 4.5 V
0.16 0.26 0.33 0.4 6.0 I
0.15 0.26 0.33 0.4 V 4.5 V
0.16 0.26 0.33 0.4 6.0 I
or V
or V
or V
or V
or V
or V
IH
IL
IH
IL IH
IL IH
IL
IH
IL IH
IL CC
or GND
0.5 5.0 10.0 µA 6.0 V
IH
or V
IL
CC
or GND
OTHER+25 40 to +85 40 to +125
IO= 20 µA
= 20 µA
O
= 20 µA
O
IO= 4.0 mA = 5.2 mA
O
IO= 6.0 mA = 7.8 mA
O
IO= 20 µA
= 20 µA
O
= 20 µA
O
IO= 4.0 mA
= 5.2 mA
O
IO= 6.0 mA
= 7.8 mA
O
VO=V
CC
or GND
IO= 0
= 0
O
= 0
O
= 0
O
March 1988 4
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
DC CHARACTERISTICS FOR 74HCT
Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER
V
IH
HIGH level input voltage
V
IL
LOW level input voltage
V
OH
HIGH level output voltage
all outputs
V
OH
HIGH level output voltage
standard outputs
V
OH
HIGH level output voltage
bus driver outputs
V
OL
LOW level output voltage
all outputs
V
OL
LOW level output voltage
standard outputs
V
OL
LOW level output voltage
bus driver outputs
±I
I
input leakage current
±I
OZ
3-state OFF-state current
I
CC
quiescent supply current
SSI 2.0 20.0 40.0 µA 5.5 V flip-flops 4.0 40.0 80.0 5.5 I MSI 8.0 80.0 LSI 50.0 500 1000 5.5 I
T
amb
(°C)
TEST CONDITIONS
74HCT
UNIT
V
CC
(V)
min. typ. max. min. max. min. max.
2.0 1.6 2.0 2.0 V 4.5 to
5.5
1.2 0.8 0.8 0.8 V 4.5 to
5.5
4.4 4.5 4.4 4.4 V 4.5 V
3.98 4.32
3.98 4.32
3.84 3.7 V 4.5 V
3.84 3.7 V 4.5 V
0 0.1 0.1 0.1 V 4.5 V
0.15 0.26
0.16 0.26
0.33 0.4 V 4.5 V
0.33 0.4 V 4.5 V
0.1 1.0 1.0 µA 5.5 V
0.5 5.0 10.0 µA 5.5 V
160.0 5.5 I
V
IH
or V
IL IH
or V
IL IH
or V
IL IH
or V
IL IH
or V
IL IH
or V
IL
CC
or GND
IH
or V
IL
CC
or GND
I
IO= 20 µA
IO= 4.0 mA
IO= 6.0 mA
IO= 20 µA
IO= 4.0 mA
IO= 6.0 mA
VO=VCCor GND per input pin; other inputs at V
CC
I
O
IO= 0
O O O
OTHER+25 −40 to +85 −40 to +125
or GND;
= 0
= 0 = 0 = 0
March 1988 5
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
T
(°C)
amb
74HCT
SYMBOL PARAMETER
UNIT
min. typ. max. min. max. min. max.
I
CC
additional quiescent supply current per input pin for unit load coefficient is 1 (note 1)
100 360 450 490 µA 4.5
Note
1. The additional quiescent supply current per input is determined by the ICCunit load, which has to be multiplied by the unit load coefficient as given in the individual data sheets. For dual supply systems the theoretical worst-case (VI= 2.4 V; VCC= 5.5 V) specification is: ICC= 0.65 mA (typical) and 1.8 mA (maximum) across temperature.
TEST CONDITIONS
V
CC
V
(V)
to
I
V
CC
2.1 V
5.5
OTHER+25 −40 to +85 −40 to +125
other inputs at VCCor GND; I
=0
O
March 1988 6
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