Philips HCMOS Technical data

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INTEGRATED CIRCUITS
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FAMILY SPECIFICATIONS
HCMOS family characteristics
File under Integrated Circuits, IC06
March 1988
HCMOS family characteristics
GENERAL
These family specifications cover the common electrical ratings and characteristics of the entire HCMOS 74HC/HCT/HCU family, unless otherwise specified in the individual device data sheet.
INTRODUCTION
The 74HC/HCT/HCU high-speed Si-gate CMOS logic family combines the low power advantages of the HE4000B family with the high speed and drive capability of the low power Schottky TTL (LSTTL).
The family will have the same pin-out as the 74 series and provide the same circuit functions.
In these families are included several HE4000B family circuits which do not have TTL counterparts, and some special circuits.
The basic family of buffered devices, designated as XX74HCXXXXX, will operate at CMOS input logic levels for high noise immunity, negligible typical quiescent supply and input current. It is operated from a power supply of 2to6V.
FAMILY
SPECIFICATIONS
A subset of the family, designated as XX74HCTXXXXX, with the same features and functions as the “HC-types”, will operate at standard TTL power supply voltage (5 V ± 10%) and logic input levels (0.8 to 2.0 V) for use as pin-to-pin compatible CMOS replacements to reduce power consumption without loss of speed. These types are also suitable for converted switching from TTL to CMOS.
Another subset, the XX74HCUXXXXX, consists of single-stage unbuffered CMOS compatible devices for application in RC or crystal controlled oscillators and other types of feedback circuits which operate in the linear mode.
HANDLING MOS DEVICES
Inputs and outputs are protected against electrostatic effects in a wide variety of device-handling situations. However, to be totally safe, it is desirable to take handling precautions into account (see also
“HANDLING PRECAUTIONS”
).
RECOMMENDED OPERATING CONDITIONS FOR 74HC/HCT
74HC 74HCT
SYMBOL PARAMETER
UNIT CONDITIONS
min. typ. max. min. typ. max.
V V V T T t
r,tf
CC I O amb amb
DC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V DC input voltage range 0 V DC output voltage range 0 V
0V
CC
0V
CC
CC CC
V
V operating ambient temperature range 40 +85 40 +85 °C see DC and AC operating ambient temperature range 40 +125 40 +125 °C input rise and fall times except for
Schmitt-trigger inputs
1000
6.0
500 V
6.0 500 ns
400 V
CHAR. per device VCC= 2.0 V
= 4.5 V
CC
= 6.0 V
CC
Note
1. For analog switches, e.g. “4016”, “4051 series”, “4351 series”, “4066” and “4067”, the specified maximum operating supply voltage is 10 V.
March 1988 2
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
RECOMMENDED OPERATING CONDITIONS FOR 74HCU
SYMBOL PARAMETER
74HCU
min. typ. max.
V
CC
V
I
V
O
T
amb
T
amb
DC supply voltage 2.0 5.0 6.0 V DC input voltage range 0 V DC output voltage range 0 V operating ambient temperature range 40 +85 °C see DC and AC operating ambient temperature range 40 +125 °C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS
V
CC
±I
IK
±I
OK
±I
O
DC supply voltage 0.5 +7V DC input diode current 20 mA for VI<−0.5 or VI> VCC+ 0.5 V DC output diode current 20 mA for VO<−0.5 or VO> VCC+ 0.5 V DC output source or sink
for 0.5 V < VO< VCC+ 0.5 V
current
standard outputs 25 mA bus driver outputs 35 mA
±I
;
CC
±I
GND
DC VCCor GND current for types with:
standard outputs 50 mA bus driver outputs 70 mA
T
stg
P
tot
storage temperature range 65 +150 °C power dissipation per package for temperature range: 40 to +125 °C
74HC/HCT/HCU plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K
UNIT CONDITIONS
V
CC
V
CC
CHAR. per device
Note
1. For analog switches, e.g. “4016”, “4051 series”, “4351 series”, “4066” and “4067”, the specified maximum operating supply voltage is 11 V.
March 1988 3
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
DC CHARACTERISTICS FOR 74HC
Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER
V
IH
HIGH level input voltage
V
IL
LOW level input voltage
V
OH
HIGH level output voltage
all outputs
V
OH
HIGH level output voltage
standard outputs
V
OH
HIGH level output voltage bus driver outputs
V
OL
LOW level output voltage
all outputs
V
OL
LOW level output voltage
standard outputs
V
OL
LOW level output voltage
bus driver outputs
±I
I
±I
OZ
input leakage current 0.1 1.0 1.0 µA 6.0 V
3-state OFF-state current
I
CC
quiescent supply current
SSI 2.0 20.0 40.0 µA 6.0 V flip-flops 4.0 40.0 80.0 6.0 I MSI 8.0 80.0 160.0 6.0 I LSI 50.0 500 1000 6.0 I
T
amb
(°C)
TEST CONDITIONS
74HC
UNIT
V
CC
(V)
V
I
min. typ. max. min. max. min. max.
1.5 1.2 1.5 1.5 V 2.0
3.15 2.4 3.15 3.15 4.5
4.2 3.2 4.2 4.2 6.0
0.8 0.5 0.5 0.5 V 2.0
2.1 1.35 1.35 1.35 4.5
2.8 1.8 1.8 1.8 6.0
1.9 2.0 1.9 1.9 V 2.0 V
4.4 4.5 4.4 4.4 4.5 I
5.9 6.0 5.9 5.9 6.0 I
3.98 4.32 3.84 3.7 V 4.5 V
5.48 5.81 5.34 5.2 6.0 I
3.98 4.32 3.84 3.7 V 4.5 V
5.48 5.81 5.34 5.2 6.0 I
0 0.1 0.1 0.1 V 2.0 V 0 0.1 0.1 0.1 4.5 I 0 0.1 0.1 0.1 6.0 I
0.15 0.26 0.33 0.4 V 4.5 V
0.16 0.26 0.33 0.4 6.0 I
0.15 0.26 0.33 0.4 V 4.5 V
0.16 0.26 0.33 0.4 6.0 I
or V
or V
or V
or V
or V
or V
IH
IL
IH
IL IH
IL IH
IL
IH
IL IH
IL CC
or GND
0.5 5.0 10.0 µA 6.0 V
IH
or V
IL
CC
or GND
OTHER+25 40 to +85 40 to +125
IO= 20 µA
= 20 µA
O
= 20 µA
O
IO= 4.0 mA = 5.2 mA
O
IO= 6.0 mA = 7.8 mA
O
IO= 20 µA
= 20 µA
O
= 20 µA
O
IO= 4.0 mA
= 5.2 mA
O
IO= 6.0 mA
= 7.8 mA
O
VO=V
CC
or GND
IO= 0
= 0
O
= 0
O
= 0
O
March 1988 4
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
DC CHARACTERISTICS FOR 74HCT
Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER
V
IH
HIGH level input voltage
V
IL
LOW level input voltage
V
OH
HIGH level output voltage
all outputs
V
OH
HIGH level output voltage
standard outputs
V
OH
HIGH level output voltage
bus driver outputs
V
OL
LOW level output voltage
all outputs
V
OL
LOW level output voltage
standard outputs
V
OL
LOW level output voltage
bus driver outputs
±I
I
input leakage current
±I
OZ
3-state OFF-state current
I
CC
quiescent supply current
SSI 2.0 20.0 40.0 µA 5.5 V flip-flops 4.0 40.0 80.0 5.5 I MSI 8.0 80.0 LSI 50.0 500 1000 5.5 I
T
amb
(°C)
TEST CONDITIONS
74HCT
UNIT
V
CC
(V)
min. typ. max. min. max. min. max.
2.0 1.6 2.0 2.0 V 4.5 to
5.5
1.2 0.8 0.8 0.8 V 4.5 to
5.5
4.4 4.5 4.4 4.4 V 4.5 V
3.98 4.32
3.98 4.32
3.84 3.7 V 4.5 V
3.84 3.7 V 4.5 V
0 0.1 0.1 0.1 V 4.5 V
0.15 0.26
0.16 0.26
0.33 0.4 V 4.5 V
0.33 0.4 V 4.5 V
0.1 1.0 1.0 µA 5.5 V
0.5 5.0 10.0 µA 5.5 V
160.0 5.5 I
V
IH
or V
IL IH
or V
IL IH
or V
IL IH
or V
IL IH
or V
IL IH
or V
IL
CC
or GND
IH
or V
IL
CC
or GND
I
IO= 20 µA
IO= 4.0 mA
IO= 6.0 mA
IO= 20 µA
IO= 4.0 mA
IO= 6.0 mA
VO=VCCor GND per input pin; other inputs at V
CC
I
O
IO= 0
O O O
OTHER+25 −40 to +85 −40 to +125
or GND;
= 0
= 0 = 0 = 0
March 1988 5
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
T
(°C)
amb
74HCT
SYMBOL PARAMETER
UNIT
min. typ. max. min. max. min. max.
I
CC
additional quiescent supply current per input pin for unit load coefficient is 1 (note 1)
100 360 450 490 µA 4.5
Note
1. The additional quiescent supply current per input is determined by the ICCunit load, which has to be multiplied by the unit load coefficient as given in the individual data sheets. For dual supply systems the theoretical worst-case (VI= 2.4 V; VCC= 5.5 V) specification is: ICC= 0.65 mA (typical) and 1.8 mA (maximum) across temperature.
TEST CONDITIONS
V
CC
V
(V)
to
I
V
CC
2.1 V
5.5
OTHER+25 −40 to +85 −40 to +125
other inputs at VCCor GND; I
=0
O
March 1988 6
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
DC CHARACTERISTICS FOR 74HCU
Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER
V
IH
HIGH level input voltage
V
IL
LOW level input voltage
V
OH
HIGH level output voltage
V
OH
HIGH level output voltage
V
OL
LOW level output voltage
V
OL
LOW level output voltage
±I
I
I
CC
input leakage current 0.1 1.0 1.0 µA 6.0 V
quiescent supply current SSI
T
amb
(°C)
TEST CONDITIONS
74HCU
UNIT
V
CC
(V)
V
I
min. typ. max. min. max. min. max.
1.7 1.4 1.7 1.7 V 2.0
3.6 2.6 3.6 3.6 4.5
4.8 3.4 4.8 4.8 6.0
0.6 0.3 0.3 0.3 V 2.0
1.9 0.9 0.9 0.9 4.5
2.6 1.2 1.2 1.2 6.0
1.8 2.0 1.8 1.8 V 2.0 V
4.0 4.5 4.0 4.0 4.5 I
5.5 6.0 5.5 5.5 6.0 I
3.98 4.32 3.84 3.7 V 4.5 V
5.48 5.81 5.34 5.2 6.0 I
or V
or
IH
IL
CC
GND 0 0.2 0.2 0.2 V 2.0 V 0 0.5 0.5 0.5 4.5 I 0 0.5 0.5 0.5 6.0 I
0.15 0.26 0.33 0.4 V 4.5 V
0.16 0.26 0.33 0.4 6.0 I
or
V
or
IH
IL
CC
GND
CC
or
GND
2.0 20.0 40.0 µA 6.0 V
CC
or
GND
OTHER+25 40 to +85 40 to +125
IO= 20 µA
= 20 µA
O
= 20 µA
O
IO= 4.0 mA = 5.2 mA
O
IO= 20 µA
= 20 µA
O
= 20 µA
O
IO= 4.0 mA
= 5.2 mA
O
IO=0
March 1988 7
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
AC CHARACTERISTICS FOR 74HC
GND = 0 V; t
= 6 ns; CL= 50 pF
r=tf
SYMBOL PARAMETER
t
THL
/ t
output transition time
TLH
standard outputs
t
THL
/ t
output transition time
TLH
bus driver outputs
AC CHARACTERISTICS FOR 74HCU
GND = 0 V; t
= 6 ns; CL= 50 pF
r=tf
SYMBOL PARAMETER
t
THL
/ t
output transition time 19 75 95 110 ns 2.0 Fig.1
TLH
T
amb
(°C)
TEST CONDITIONS
74HC
+25 40 to +85 40 to +125
UNIT
V
CC
(V)
min. typ. max. min. max. min. max.
19 75 95 110 ns 2.0 Figs 3 and 4 7 15 19 22 4.5 6 13 16 19 6.0 14 60 75 90 ns 2.0 Figs 3 and 4 5 12 15 18 4.5 4 10 13 15 6.0
T
amb
(°C)
TEST CONDITIONS
74HCU
+25 40 to +85 40 to +125
UNIT
V
CC
(V)
min. typ. max. min. max. min. max.
7 15 19 22 4.5 6 13 16 19 6.0
WAVEFORMS
WAVEFORMS
AC CHARACTERISTICS FOR 74HCT
GND = 0 V; t
= 6 ns; CL= 50 pF
r=tf
T
SYMBOL PARAMETER
+25 40 to +85 40 to +125
min. typ. max. min. max. min. max.
t
THL
t
THL
/ t
/ t
output transition time
TLH
standard outputs
output transition time
TLH
bus driver outputs
7 15 19 22 ns 4.5 Figs 8 and 9
5 12 15 18 ns 4.5 Figs 8 and 9
March 1988 8
(°C)
amb
74HCT
UNIT
TEST CONDITIONS
WAVEFORMS
V
CC
(V)
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
HCU TYPES AC waveforms 74HCU
Fig.1 Input rise and fall times, transition times and propagation delays for combinatorial logic ICs.
Test circuit for 74HCU
handbook, halfpage
INPUT
OUTPUT
handbook, halfpage
PULSE
GENERATOR
t
PHL
t
10%
THL
90%
t
r
90%
50%
50%
10%
V
I
R
t
f
V
CC
PLH
t
TLH
V
O
CL50 pF
GND
MGK564
MGK565
t
V
CC
D.U.T
T
CL= load capacitance including jig and probe capacitance
R
T
(see AC CHARACTERISTICS for values).
= termination resistance should be equal to the output impedance Zoof
the pulse generator.
Fig.2 Test circuit.
March 1988 9
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
HC TYPES AC waveforms 74HC
handbook, halfpage
INPUT
OUTPUT
t
PHL
t
10%
THL
90%
t
r
90%
50%
50%
10%
t
f
V
CC
PLH
t
TLH
GND
MGK564
t
Fig.3 Input rise and fall times, transition times and propagation delays for combinatorial logic ICs.
AC waveforms 74HC
handbook, full pagewidth
CLOCK
INPUT
DATA
INPUT
OUTPUT
SET,
RESET,
PRESET
INPUT
(1) In Fig.4 the active transition of the clock is going from LOW-to-HIGH and the active level of the forcing signals (SET, RESET
and PRESET) is HIGH. The actual direction of the transition of the clock input and the actual active levels of the forcing signals are specified in the individual device data sheet.
(2) For AC measurements: t
= 6 ns; when measuring f
r=tf
10 %
50%
t
t
su
rem
50%
t
r
90%
50%
10%
t
PLH
1/f
max t
f
t
WH
t
h
90%
50%
, there is no constraint on tr,tfwith 50% duty factor.
max
t
TLH
t
WL
t
h
t
su
t
PHL
t
THL
V
GND
V
GND
V
GND
MGK569
CC
CC
CC
Fig.4 Set-up times, hold times, removal times, propagation delays and the maximum clock pulse frequency for
sequential logic ICs.
March 1988 10
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
Test circuit for 74HC
handbook, halfpage
PULSE
GENERATOR
CL= load capacitance including jig and probe capacitance
R
T
(see AC CHARACTERISTICS for values).
= termination resistance should be equal to the output impedance Zoof
the pulse generator.
AC waveforms 74HC (continued)
handbook, full pagewidth
OUTPUT ENABLE
OUTPUT LOW-to-OFF OFF-to-LOW
OUTPUT HIGH-to-OFF OFF-to-HIGH
90%
50%
V
I
Fig.5 Test circuit.
t
f
10%
t
PLZ
t
PHZ
10%
R
T
90%
V
CC
D.U.T
V
t
r
t
O
CL50 pF
PZL
t
PZH
MGK565
50%
50%
V
CC
GND
MGK562
outputs
enabled
Fig.6 Propagation delays of 3-state outputs.
March 1988 11
outputs
disabled
outputs enabled
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
Test circuit for 74HC
handbook, full pagewidth
PULSE
GENERATOR
Switch position
TEST SWITCH t
PZH
t
PZL
t
PHZ
t
PLZ
GND V
CC
GND V
CC
Note
1. For open-drain N-channel outputs t
CL= load capacitance including jig and probe capacitance
R
T
(see AC CHARACTERISTICS for values).
= termination resistance should be equal to the output impedance Zoof
the pulse generator.
PLZ
V
I
and t
V
CC
D.U.T
R
T
are applicable.
PZL
V
O
CL50 pF
RL = 1 k
MGK563
V
CC
Fig.7 Test circuit for 3-state outputs.
HCT TYPES AC waveforms 74HCT
t
PHL
t
10%
THL
90%
t
r
90%
1.3 V
1.3 V 10%
handbook, halfpage
INPUT
OUTPUT
Fig.8 Input rise and fall times, transition times and propagation delays for combinatorial logic ICs.
March 1988 12
t
f
3 V
PLH
t
TLH
GND
MGK567
t
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
AC waveforms 74HCT
handbook, full pagewidth
CLOCK
INPUT
DATA
INPUT
OUTPUT
SET,
RESET,
PRESET
INPUT
(1) In Fig.9 the active transition of the clock is going from LOW-to-HIGH and the active level of the forcing signals
(SET, RESET and PRESET) is HIGH. The actual direction of the transition of the clock input and the actual active levels of the forcing signals are specified in the individual device data sheet.
(2) For AC measurements: t
= 6 ns; when measuring f
r=tf
10%
1.3 V
t
t
su
rem
1.3 V
t
r
10%
90%
1.3 V
t
PLH
1/f
max t
f
t
WH
t
h
90%
1.3 V
, there is no constraint on tr,tfwith 50% duty factor.
max
t
TLH
t
WL
t
h
t
su
t
PHL
t
THL
3 V
GND
3 V
GND
3 V
GND
MGK568
Fig.9 Set-up times, hold times, removal times, propagation delays and the maximum clock pulse frequency for
sequential logic ICs.
Test circuit for 74HCT
handbook, halfpage
V
PULSE
GENERATOR
CL= load capacitance including jig and probe capacitance (see AC
R
T
CHARACTERISTICS for values).
= termination resistance should be equal to the output impedance Zoof
the pulse generator.
I
V
CC
V
D.U.T
R
T
O
CL50 pF
MGK565
Fig.10 Test circuit.
March 1988 13
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
AC waveforms 74HCT (continued)
handbook, full pagewidth
Test circuit for 74HCT
handbook, full pagewidth
OUTPUT
ENABLE
OUTPUT LOW-to-OFF OFF-to-LOW
OUTPUT HIGH-to-OFF OFF-to-HIGH
MGK566
PULSE
GENERATOR
90%
t
f
1.3 V 10%
t
PLZ
t
outputs
enabled
10%
PHZ
90%
outputs
disabled
t
r
t
PZL
1.3 V
t
PZH
1.3 V
Fig.11 Propagation delays of 3-state outputs.
V
CC
V
I
D.U.T
R
T
V
O
CL50 pF
RL = 1 k
outputs enabled
V
CC
Switch position
TEST SWITCH t
PZH
t
PZL
t
PHZ
t
PLZ
GND V
CC
GND V
CC
Note
1. For open-drain N-channel outputs t
CL= load capacitance including jig and probe capacitance
R
T
(see AC CHARACTERISTICS for values).
= termination resistance should be equal to the output impedance Zoof
the pulse generator.
PLZ
and t
are applicable.
PZL
Fig.12 Test circuit for 3-state outputs.
March 1988 14
MGK563
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
DATA SHEET SPECIFICATION GUIDE
INTRODUCTION
The 74HCMOS data sheets have been designed for ease-of-use. A minimum of cross-referencing for more information is needed.
TYPICAL PROPAGATION DELAY AND FREQUENCY
The typical propagation delays listed at the top of the data sheets are the average of t
PLH
and t
for the longest data
PHL
path through the device with a 15 pF load. For clocked devices, the maximum frequency of operation
is also given. The typical operating frequency is the maximum device operating frequency with a 50% duty factor and no constraints on tr and tf.
LOGIC SYMBOLS
Two logic symbols are given for each device - the conventional one (Logic Symbol) which explicitly shows the internal logic (except for complex logic) and the IEC Logic Symbol as developed by the IEC (International Electrotechnical Commission).
The IEC has been developing a very powerful symbolic language that can show the relationship of each input of a digital logic current to each output without explicitly showing the internal logic. Internationally, Working Group 2 of IEC Technical Committee TC-3 has prepared a new document (Publication 617-12) which supersedes Publication 117-15, published in 1972.
RATINGS
The “RATINGS” table (Limiting values in accordance with the Absolute Maximum System - IEC134) lists the maximum limits to which the device can be subjected without damage. This doesn’t imply that the device will function at these extreme conditions, only that, when these conditions are removed and the device operated within the Recommended Operating Conditions, it will still be functional and its useful life won’t have been shortened.
The maximum rated supply voltage of 7 V is well below the typical breakdown voltage of 18 V.
RECOMMENDED OPERATING CONDITIONS
The “RECOMMENDED OPERATING CONDITIONS” table lists the operating ambient temperature and the
conditions under which the limits in the “DC CHARACTERISTICS” and “AC CHARACTERISTICS” tables will be met. The table should not be seen as a set of limits guaranteed by the manufacturer, but as the conditions used to test the devices and guarantee that they will then meet the limits in the DC and AC CHARACTERISTICS tables.
DC CHARACTERISTICS
The “DC CHARACTERISTICS” table reflects the DC limits used during testing. The values published are guaranteed.
The threshold values of V
and VIL can be tested by the
IH
user. If VIH and VIL are applied to the inputs, the output voltages will be those published in the “DC CHARACTERISTICS” table. There is a tendency, by some, to use the published VIH and VIL thresholds to test a device for functionality in a “function-table exercizer” mode. This frequently causes problems because of the noise present at the test head of automated test equipment with cables up to 1 metre. Parametric tests, such as those used for the output levels under the VIH and VIL conditions are done fairly slowly, in the order of milliseconds, so that there is no noise at the inputs when the outputs are measured. But in functionality testing, the outputs are measured much faster, so there can be noise on the inputs, before the device has assumed its final and correct output state. Thus, never use VIH and VIL to test the functionality of any HCMOS device type; instead, use input voltages of VCC (for the HIGH state) and 0 V (for the LOW state). In no way does this imply that the devices are noise-sensitive in the final system.
In the data sheets, it may appear strange that the typical VIL is higher than the maximum VIL. However, this is because V
is the maximum VIL (guaranteed) for all
ILmax
devices that will be recognized as a logic LOW. However, typically a higher VIL will also be recognized as a logic LOW. Conversely, the typical VIH is lower than its minimum guaranteed level.
For 74HCMOS, unlike TTL, no output HIGH short-circuit current is specified. The use of this current, for example, to calculate propagation delays with capacitive loads, is covered by the HCMOS graphs showing the output drive capability and those showing the dependence of propagation delay on load capacitance.
The quiescent supply current ICC is the leakage current of all the reversed-biased diodes and the OFF-state MOS transistors. It is measured with the inputs at VCC or GND and is typically a few nA.
March 1988 15
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
AC CHARACTERISTICS
The “AC CHARACTERISTICS” table lists the guaranteed limits when a device is tested under the conditions given in the AC Test Circuits and Waveforms section.
TEST CIRCUITS
Good high-frequency wiring practices should be used in test circuits. Capacitor leads should be as short as possible to minimize ripples on the output waveform transitions and undershoot. Generous ground metal (preferably a ground-plane) should be used for the same reasons. A V at the test socket, also with short leads. Input signals should have rise and fall times of 6 ns, a signal swing of 0 V to VCC for 74HC and 0 V to 3 V for 74HCT; a 1.0 MHz square wave is recommended for most propagation delay tests. The repetition rate must be increased for testing f
. Two pulse generators are usually required for testing
max
such parameters as set-up time, hold time and removal time. f
max
with a 50% duty factor, but for typical f 60 MHz, there are no constraints on rise and fall times.
decoupling capacitor should be provided
CC
is also tested with 6 ns input rise and fall times,
as high as
max
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Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
DEFINITIONS OF SYMBOLS AND TERMS USED IN HCMOS DATA SHEETS
Currents
Positive current is defined as conventional current flow into a device. Negative current is defined as conventional current flow out of a device.
I
CC
Quiescent power supply current; the current flowing into the VCC supply terminal.
I
Additional quiescent supply current per input
CC
pin at a specified input voltage and VCC.
I
GND
Quiescent power supply current; the current flowing into the GND terminal.
I
I
Input leakage current; the current flowing into a device at a specified input voltage and VCC.
I
IK
Input diode current; the current flowing into a device at a specified input voltage.
I
O
Output source or sink current: the current flowing into a device at a specified output voltage.
I
OK
Output diode current; the current flowing into a device at a specified output voltage.
I
OZ
OFF-state output current; the leakage current flowing into the output of a 3-state device in the OFF-state, when the output is connected to VCC or GND.
I
S
Analog switch leakage current; the current flowing into an analog switch at a specified voltage across the switch and VCC.
V
V
V
V V
Analog terms
R
R
Capacitances
LOW level input voltage; the range of input
IL
voltages that represents a logic LOW level in the system.
HIGH level output voltage; the range of
OH
voltages at an output terminal with a specified output loading and supply voltage. Device inputs are conditioned to establish a HIGH level at the output.
LOW level output voltage; the range of voltages
OL
at an output terminal with a specified output loading and supply voltage. Device inputs are conditioned to establish a LOW level at the output.
Trigger threshold voltage; positive-going signal.
T+
Trigger threshold voltage; negative-going
T
signal.
ON-resistance; the effective ON-state
ON
resistance of an analog switch, at a specified voltage across the switch and output load.
ON-resistance; the difference in
ON
ON-resistance between any two switches of an analog device at a specified voltage across the switch and output load.
Voltages
All voltages are referenced to GND (ground), which is typically 0 V.
GND Supply voltage; for a device with a single
negative power supply, the most negative power supply, used as the reference level for other voltages; typically ground.
V
Supply voltage; the most positive potential on
CC
the device.
V
Supply voltage; one of two (GND and VEE)
EE
negative power supplies.
V
Hysteresis voltage; difference between the
H
trigger levels, when applying a positive and a negative-going input signal.
V
HIGH level input voltage; the range of input
IH
voltages that represents a logic HIGH level in the system.
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C
Input capacitance; the capacitance measured
I
at a terminal connected to an input of a device.
C
Input/Output capacitance; the capacitance
I/O
measured at a terminal connected to an I/O-pin (e.g. a transceiver).
C
Output load capacitance; the capacitance
L
connected to an output terminal including jig and probe capacitance.
C
Power dissipation capacitance; the capacitance
PD
used to determine the dynamic power dissipation per logic function, when no extra load is provided to the device.
C
Switch capacitance; the capacitance of a
S
terminal to a switch of an analog device.
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
AC switching parameters
f
i
f
o
f
max
t
h
t
r
t
f
t
PHL
t
PLH
t
PHZ
Input frequency; for combinatorial logic devices
t
PLZ
the maximum number of inputs and outputs switching in accordance with the device function table. For sequential logic devices the clock frequency using alternate HIGH and LOW for data input or using the toggle mode, whichever is applicable.
Output frequency; each output. Maximum clock frequency; clock input
t
waveforms should have a 50% duty factor and
PZH
be such as to cause the outputs to be switching from 10%VCC to 90%VCC in accordance with the device function table.
Hold time; the interval immediately following the active transition of the timing pulse (usually the clock pulse) or following the transition of the control input to its latching level, during which interval the data to be recognized must be
t
maintained at the input to ensure their
PZL
continued recognition. A negative hold time indicates that the correct logic level may be released prior to the timing pulse and still be recognized.
,
Clock input rise and fall times; 10% and 90% values.
Propagation delay; the time between the specified reference points, normally the 50% points for 74HC and 74HCU devices on the
t
rem
input and output waveforms and the 1.3 V points for the 74HCT devices, with the output changing from the defined HIGH level to the defined LOW level.
Propagation delay; the time between the specified reference points, normally the 50% points for 74HC and 74HCU devices on the input and output waveforms and the 1.3 V point
t
su
for the 74HCT devices, with the output changing from the defined LOW level to the defined HIGH level.
3-state output disable time; the time between the specified reference points, normally the 50% points for the 74HC and 74HCU devices and the 1.3 V points for the 74HCT devices on the output enable input voltage waveform and a
3-state output disable time; the time between the specified reference points, normally the 50% points for the 74HC devices and the 1.3 V points for the 74HCT devices on the output enable input voltage waveform and a point representing 10% of the output swing on the output voltage waveform of a 3-state device, with the output changing from a LOW level (VOL) to a high impedance OFF-state (Z).
3-state output enable time; the time between the specified reference points, normally the 50% points for the 74HC devices and 1.3 V points for the 74HCT devices on the output enable input voltage waveform and the 50% point on the output voltage waveform of a 3-state device, with the output changing from a high impedance OFF-state (Z) to a HIGH level (VOH).
3-state output enable time; the time between the specified reference points, normally the 50% points for the 74HC devices and the 1.3 V points for the 74HCT devices on the output enable input voltage waveform and the 50% point on the output voltage waveform of a 3-state device, with the output changing from a high impedance OFF-state (Z) to a LOW level (VOL).
Removal time; the time between the end of an overriding asynchronous input, typically a clear or reset input, and the earliest permissible beginning of a synchronous control input, typically a clock input, normally measured at the 50% points for 74HC devices and the 1.3 V points for the 74HCT devices on both input voltage waveforms.
Set-up time; the interval immediately preceding the active transition of the timing pulse (usually the clock pulse) or preceding the transition of the control input to its latching level, during which interval the data to be recognized must be maintained at the input to ensure their recognition. A negative set-up time indicates that the correct logic level may be initiated sometime after the active transition of the timing pulse and still be recognized.
point representing 10% of the output swing on the output voltage waveform of a 3-state device, with the output changing from a HIGH level (VOH) to a high impedance OFF-state (Z).
March 1988 18
Philips Semiconductors
HCMOS family characteristics FAMILY SPECIFICATIONS
t
THL
t
THL
t
W
Output transition time; the time between two specified reference points on a waveform, normally 90% and 10% points, that is changing from HIGH-to-LOW.
Output transition time; the time between two specified reference points on a waveform, normally 10% and 90% points, that is changing from LOW-to-HIGH.
Pulse width; the time between the 50% amplitude points on the leading and trailing edges of a pulse for 74HC and 74HCU devices and at the 1.3 V points for 74HCT devices.
March 1988 19
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