Philips CGY2014TT User Manual

INTEGRATED CIRCUITS

DATA SH EET

CGY2014TT

GSM/DCS/PCS power amplifier

Product specification
Supersedes data of 2000 Apr 11
File under Integrated Circuits, IC17

2000 Oct 16

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

FEATURES

• Operating at 3.6 V battery supply

• Power Amplifier (PA) output power:

35 dBm in GSM band and 32.5 dBm in DCS/PCS band

• Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band

• Wide operating temperature range from −20 to +85 °C

GENERAL DESCRIPTION

The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at

3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic

low-pass filter to comply with the transmit spurious
specification.

• HTSSOP20 exposed die pad package.

The voltages applied on pinsVDD(drain) control the power
of the power amplifier and permit to switch it off.

APPLICATIONS

• Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceiversfor E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

DD

I

DD(LB)

P

o(LB)(max)

I

DD(HB)

P

o(HB)(max)

T

amb

positive supply voltage − 3.5 4.2 V
GSM positive peak supply current − 2 − A
maximum output power in GSM band 34.5 35 − dBm
DCS/PCS positive peak supply current − 1.5 − A
maximum output power in DCS/PCS band 32 32.5 − dBm
ambient temperature −20 − +85 °C

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

CGY2014TT HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads;

body width 4.4 mm

2000 Oct 16 2

SOT527-1

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

BLOCK DIAGRAM

handbook, full pagewidth

RFI

RFI

LB

GND

HB

GND1

9

15

2

V

DD1LBVDD2LB

LB
8

7

CGY2014TT

3 4, 5

V

DD1HB

Fig.1 Block diagram.

V

DD2HB

6

13, 14

1, 10, 11, 12,

16, 19, 20

17, 18

RFO/V

n.c.

RFO/V

FCA180

DD3LB

DD3HB

2000 Oct 16 3

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

PINNING

SYMBOL PIN DESCRIPTION

n.c. 1 not connected
RFI

HB

V

DD1HB

V

DD2HB

V

DD2HB

V

DD2LB

V

DD1LB

GND1

LB

RFI

LB

n.c. 10 not connected
n.c. 11 not connected
n.c. 12 not connected
RFO/V

DD3LB

RFO/V

DD3LB

GND 15 ground
n.c. 16 internal connection to ground; pin should not be connected to the board
RFO/V

DD3HB

RFO/V

DD3HB

n.c. 19 not connected
n.c. 20 not connected

− exposed die ground

2 DCS/PCS power amplifier input
3 DCS/PCS first stage supply voltage
4 DCS/PCS second stage supply voltage
5 DCS/PCS second stage supply voltage
6 GSM second stage supply voltage
7 GSM first stage supply voltage
8 GSM first stage ground
9 GSM power amplifier input

13 GSM power amplifier output and third stage supply voltage
14 GSM power amplifier output and third stage supply voltage

17 DCS/PCS power amplifier output and third stage supply voltage
18 DCS/PCS power amplifier output and third stage supply voltage

handbook, halfpage

RFI

V

DD1HB

V

DD2HB

V

DD2HB

V

DD2LB

V

DD1LB

GND1

RFI

n.c.

HB

LB
LB

n.c.

1
2
3
4
5

CGY2014TT

6
7
8
9

10

FCA181

20
19
18
17
16
15
14
13
12
11

n.c.
n.c.
RFO/V
RFO/V
n.c.
GND
RFO/V
RFO/V
n.c.
n.c.

DD3HB
DD3HB

DD3LB
DD3LB

Fig.2 Pin configuration.

2000 Oct 16 4

FUNCTIONAL DESCRIPTION
Operating conditions

The CGY2014TT is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the

“ETS 300 577 specification”

, which are

defined as follows:

• ton= 570 µs

• T = 4.16 ms

• Duty cycle δ =1/8.

Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.

Power amplifier

The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

DD

T

j(max)

T

stg

P

tot

P

i(LB)

P

i(HB)

Note

1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;

see

THERMAL CHARACTERISTICS

positive supply voltage 5.2 V
maximum operating junction temperature 150 °C
storage temperature 150 °C
total power dissipation note 1 2.0 W
GSM input power 10 dBm
DCS/PCS input power 10 dBm

“Application Note CTT0003”

.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-c)

thermal resistance from junction to case note 1 30 K/W

Note

1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;

see

“Application Note CTT0003”

.

DC CHARACTERISTICS

VDD= 3.5 V; T

=25°C; general operating conditions applied; peak current values measured during burst; unless

amb

otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies: pins V

V

DD

I

DD(LB)

positive supply voltage note 1 0 3.5 4.2 V
GSM positive peak supply current P

DD1LB

, V

DD2LB

, RFO/V

DD3LB

, V

DD1HB

, V

DD2HB

i(LB)

and RFO/V

DD3HB

= 0 dBm − 2 − A

note 2 0.5 1.5 3 A

I

DD(HB)

DCS/PCS positive peak supply current P

= 3 dBm − 1.5 − A

i(HB)

note 3 0.25 1 2 A

Notes

1. The supply circuit includes a (drain) MOS switch with R

2. No RF input signal or P

3. No RF input signal or P

< −30 dBm; VDD=1V.

i(LB)

< −30 dBm; VDD=1V.

i(HB)

=40mΩ. The battery voltage is 3.6 V (typical value).

DSon

2000 Oct 16 5

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

AC CHARACTERISTICS

VDD= 3.5 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Low band: GSM power amplifier

P

i(LB)

f

RF(LB)

P

o(LB)(max)

η

LB

P

o(LB)(min)

N

RX(LB)

H2

LB

H3

LB

Stab

LB

High band: DCS/PCS power amplifier; note 2
P

i(HB)

f

RF(HB)

P

o(HB)(max)

η

HB

P

o(HB)(min)

α

HB

N

RX(HB)

H2

HB

H3

HB

Stab

HB

=25°C; measured on the Philips demoboard (see Fig.8).

amb

input power −2 0 +2 dBm
RF frequency range 880 − 915 MHz
maximum output power see Figs 3 and 4 34.5 35 − dBm
efficiency see Fig.3 50 55 − %
minimum output power VDD=0V; P
output noise in RX band P

2nd harmonic level P
3rd harmonic level P
stability P

= 0 dBm

i(LB)

f

= 925 to 935 MHz −−−117 dBm/Hz

RF

f

= 935 to 960 MHz −−−129 dBm/Hz

RF

= 0 dBm −−−35 dBc

i(LB)

= 0 dBm −−−35 dBc

i(LB)

= 0 dBm; note 1 −−−60 dBc

i(LB)

= 0 dBm −−35 − dBm

i(LB)

input power 2 3 5 dBm
RF frequency range for DCS operation 1710 − 1785 MHz
maximum output power see Figs 5 and 6 32 32.5 − dBm
efficiency see Fig.5 38 40 − %
minimum output power VDD=0V; P
high band isolation when

low band is operating

V

DD(LB)

V

DD(HB)

= 3.5 V; P

=0V; P

= 3 dBm −−32 − dBm

i(HB)

i(LB)

i(HB)

= 0 dBm;

= 3 dBm;

− 0 − dBm

note 3
output noise in RX band P
2nd harmonic level P
3rd harmonic level P
stability P

= 3 dBm −−−121 dBm/Hz

i(HB)

= 3 dBm −−−35 dBc

i(HB)

= 3 dBm −−−35 dBc

i(HB)

= 3 dBm; note 1 −−−60 dBc

i(HB)

Notes

1. The device is adjusted to provide nominal load power into a 50 Ω load. The device is switched off and a 6 : 1 load
replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.

2. The power amplifier can be matched to PCS and or DCS/PCS operation through optimization of the matching circuit.

3. Isolation can be improved to −20 dBm (typical value) with a pin diode switched in the DCS output matching.

2000 Oct 16 6

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

Performance characteristics in GSM band

37

handbook, halfpage

P

o

(dBm)

35

efficiency

(3)

(2)
(1)

(3)
(2)

(1)

FCA171

output power

33

31

800 850

V

=3V.

DD1(LB)

V

DD2(LB)=VDD3(LB)

P

= 0 dBm.

i(LB)

= 3.5 V.

900 1000

(1) T
(2) T
(3) T

amb
amb
amb

950

f

RF

=85°C.
=25°C.
= −20 °C.

(MHz)

Fig.3 Outputpowerand efficiency as a function of

the frequency.

60

(%)

40

20

0

40

handbook, halfpage

P

η

o

(dBm)

30

(1)
(2)
(3)

FCA176

20

10

0

01

f

= 900 MHz.

RF(LB)

P

= 0 dBm.

i(LB)

V

=3V.

DD1(LB)

VDD=V

DD2(LB)=VDD3(LB)

24

(1) T
(2) T

.

(3) T

amb
amb
amb

3

V

DD

=85°C.
=25°C.
= −20 °C.

(V)

Fig.4 Output power as a function of the supply

voltage.

Performance characteristics in DCS band

1800

f

RF

=85°C.
=25°C.
= −20 °C.

FCA172

(MHz)

35.5

handbook, halfpage

P

o

(dBm)

34.5

33.5

32.5

31.5
1650 1700

V

=3V.

DD1(HB)

V

DD2(HB)=VDD3(HB)

P

= 3 dBm.

i(HB)

= 3.5 V.

efficiency

output power

(3)
(2)

(1)

(3)
(2)

(1)

1750 1850

(1) T

amb

(2) T

amb

(3) T

amb

Fig.5 Outputpowerand efficiency as a function of

the frequency.

55

(%)
45

35

25

15

40

handbook, halfpage

η

P

o

(dBm)

FCA173

30

20

(1)
(2)
(3)

10

0

01

f

= 1750 MHz.

RF(HB)

P

= 3 dBm.

i(HB)

V

=3V.

DD1(HB)

VDD=V

DD2(HB)=VDD3(HB)

24

(1) T
(2) T

.

(3) T

amb
amb
amb

3

V

DD

=85°C.
=25°C.
= −20 °C.

(V)

Fig.6 Output power as a function of the supply

voltage.

2000 Oct 16 7

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

APPLICATION INFORMATION

handbook, full pagewidth

V

d23DCS

RFinDCS

V

V

RFinGSM

V

d23GSM

d1DCS

d1GSM

1 nF

10 nF

3.9 nH

TRL1

1 nF

4.7
pF

3.3 nH

100 pF

6 pF

1

pF

100 pF

TRL2

n.c.

1

RFI

HB

2

V

DD1HB

V

DD2HB

V

DD2HB

V

V

GND1

3

4

5

DD2LB

DD1LB

CGY2014TT

6

7

LB

8

RFI

LB

9

n.c. n.c.

10

56 pF

n.c.

20

n.c.

19

RFO/V

RFO/V

n.c.

GND

RFO/V

RFO/V

n.c.

TRL6

4 pF

DD3HB

DD3HB

(1)

DD3LB

DD3LB

18

17

16

15

14

13

12

11

TRL3

2.7 pF

3 pF

BA891

TRL4 TRL5

4.7 pF 9.1 pF

3.3 kΩ

100 pF

5.6 pF

RF

Vpin

RF

out

out

FCA174

DCS

GSM

(1) Pin 16 is internally connected to ground and should not be connected to the board.
(2) Transmission lines:

Thickness 0.4 mm, substrate FR4 and εr= 4.7.
TRL1: width = 500 µm, length = 4.5 mm.
TRL2: width = 500 µm, length = 20 mm.
TRL3: width = 150 µm, length = 30 mm.
TRL4: width = 500 µm, length = 4 mm.
TRL5: width = 500 µm, length = 1.5 mm.
TRL6: width = 500 µm, length = 13 mm.

Fig.7 Application diagram.

2000 Oct 16 8

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

handbook, full pagewidth

56 pF

Dimensions: approximately 19 mm × 19 mm.

4 pF

4.7 pF

9.1 pF

1 nF

6 pF

100 pF

CGY2014TT

100 pF

3.3 nH

3 pF

100 pF

2.7 pF

1 nF

4.7 pF

1 pF

5.6 pF

3.9 nH

10 nF

BA891

3.3 kΩ

FCA175

Fig.8 Part of layout of Philips demoboard.

2000 Oct 16 9

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

PACKAGE OUTLINE

HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm

SOT527-1

D

c

y

Z

20

heathsink side

pin 1 index

D

h

11

A

E

h

2

A

1

110

w M

b

e

p

E

H

E

detail X

A

X

v M

A

(A )

3

A

θ

L

p

L

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

mm

OUTLINE
VERSION

SOT527-1

A

max.

1.10

0.15

0.05

p

0.95

0.80

0.30

0.25

0.19

IEC JEDEC EIAJ

UNIT A1A2A3b

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

cD

0.20

6.6

0.09

6.4

(1)

D

h

4.3

4.1

REFERENCES

E

4.5

4.3

(2)

2000 Oct 16 10

eLL

E

3.1

2.9

h

0.65

H

6.6

6.2

E

p

0.75

0.50

EUROPEAN

PROJECTION

(1)

Z

ywv θ

0.13 0.10.21.0

0.5

0.2

ISSUE DATE

99-11-12
00-07-12

o

8

o

0

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

SOLDERING
Introduction to soldering surface mount packages

Thistextgivesaverybriefinsighttoa complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for
certainsurfacemountICs,butitisnotsuitableforfinepitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemountdevices(SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleadsonfoursides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2000 Oct 16 11

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, LFBGA, SQFP, TFBGA not suitable suitable

SOLDERING METHOD

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2000 Oct 16 12

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2000 Oct 16 13

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

NOTES

2000 Oct 16 14

Philips Semiconductors Product specification

GSM/DCS/PCS power amplifier CGY2014TT

NOTES

2000 Oct 16 15

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Indonesia: PT Philips DevelopmentCorporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS,ViaCasati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

70

Printed in The Netherlands 403506/02/pp16 Date of release:2000 Oct 16 Document order number: 9397 750 07455