Philips CGY2014TT User Manual
INTEGRATED CIRCUITS
DATA SH EET
CGY2014TT
GSM/DCS/PCS power amplifier
Product specification
Supersedes data of 2000 Apr 11
File under Integrated Circuits, IC17
2000 Oct 16
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
FEATURES
• Operating at 3.6 V battery supply
• Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
• Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band
• Wide operating temperature range from −20 to +85 °C
GENERAL DESCRIPTION
The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
• HTSSOP20 exposed die pad package.
The voltages applied on pinsVDD(drain) control the power
of the power amplifier and permit to switch it off.
APPLICATIONS
• Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceiversfor E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
DD
I
DD(LB)
P
o(LB)(max)
I
DD(HB)
P
o(HB)(max)
T
amb
positive supply voltage − 3.5 4.2 V
GSM positive peak supply current − 2 − A
maximum output power in GSM band 34.5 35 − dBm
DCS/PCS positive peak supply current − 1.5 − A
maximum output power in DCS/PCS band 32 32.5 − dBm
ambient temperature −20 − +85 °C
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
CGY2014TT HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm
2000 Oct 16 2
SOT527-1
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
BLOCK DIAGRAM
handbook, full pagewidth
RFI
RFI
LB
GND
HB
GND1
9
15
2
V
DD1LBVDD2LB
LB
8
7
CGY2014TT
3 4, 5
V
DD1HB
Fig.1 Block diagram.
V
DD2HB
6
13, 14
1, 10, 11, 12,
16, 19, 20
17, 18
RFO/V
n.c.
RFO/V
FCA180
DD3LB
DD3HB
2000 Oct 16 3
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
PINNING
SYMBOL PIN DESCRIPTION
n.c. 1 not connected
RFI
HB
V
DD1HB
V
DD2HB
V
DD2HB
V
DD2LB
V
DD1LB
GND1
LB
RFI
LB
n.c. 10 not connected
n.c. 11 not connected
n.c. 12 not connected
RFO/V
DD3LB
RFO/V
DD3LB
GND 15 ground
n.c. 16 internal connection to ground; pin should not be connected to the board
RFO/V
DD3HB
RFO/V
DD3HB
n.c. 19 not connected
n.c. 20 not connected
− exposed die ground
2 DCS/PCS power amplifier input
3 DCS/PCS first stage supply voltage
4 DCS/PCS second stage supply voltage
5 DCS/PCS second stage supply voltage
6 GSM second stage supply voltage
7 GSM first stage supply voltage
8 GSM first stage ground
9 GSM power amplifier input
13 GSM power amplifier output and third stage supply voltage
14 GSM power amplifier output and third stage supply voltage
17 DCS/PCS power amplifier output and third stage supply voltage
18 DCS/PCS power amplifier output and third stage supply voltage
handbook, halfpage
RFI
V
DD1HB
V
DD2HB
V
DD2HB
V
DD2LB
V
DD1LB
GND1
RFI
n.c.
HB
LB
LB
n.c.
1
2
3
4
5
CGY2014TT
6
7
8
9
10
FCA181
20
19
18
17
16
15
14
13
12
11
n.c.
n.c.
RFO/V
RFO/V
n.c.
GND
RFO/V
RFO/V
n.c.
n.c.
DD3HB
DD3HB
DD3LB
DD3LB
Fig.2 Pin configuration.
2000 Oct 16 4
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2014TT is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the
“ETS 300 577 specification”
, which are
defined as follows:
• ton= 570 µs
• T = 4.16 ms
• Duty cycle δ =1/8.
Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.
Power amplifier
The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.
Philips Semiconductors Product specification
GSM/DCS/PCS power amplifier CGY2014TT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
DD
T
j(max)
T
stg
P
tot
P
i(LB)
P
i(HB)
Note
1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see
THERMAL CHARACTERISTICS
positive supply voltage 5.2 V
maximum operating junction temperature 150 °C
storage temperature 150 °C
total power dissipation note 1 2.0 W
GSM input power 10 dBm
DCS/PCS input power 10 dBm
“Application Note CTT0003”
.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-c)
thermal resistance from junction to case note 1 30 K/W
Note
1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see
“Application Note CTT0003”
.
DC CHARACTERISTICS
VDD= 3.5 V; T
=25°C; general operating conditions applied; peak current values measured during burst; unless
amb
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies: pins V
V
DD
I
DD(LB)
positive supply voltage note 1 0 3.5 4.2 V
GSM positive peak supply current P
DD1LB
, V
DD2LB
, RFO/V
DD3LB
, V
DD1HB
, V
DD2HB
i(LB)
and RFO/V
DD3HB
= 0 dBm − 2 − A
note 2 0.5 1.5 3 A
I
DD(HB)
DCS/PCS positive peak supply current P
= 3 dBm − 1.5 − A
i(HB)
note 3 0.25 1 2 A
Notes
1. The supply circuit includes a (drain) MOS switch with R
2. No RF input signal or P
3. No RF input signal or P
< −30 dBm; VDD=1V.
i(LB)
< −30 dBm; VDD=1V.
i(HB)
=40mΩ. The battery voltage is 3.6 V (typical value).
DSon
2000 Oct 16 5
Loading...