Philips CGY2011G, CGY2010G Datasheet

INTEGRATED CIRCUITS

DATA SH EET

CGY2010G; CGY2011G

GSM 4 W power amplifiers

Objective specification
Supersedes data of 1995 Oct 25
File under Integrated Circuits, IC17

1996 Jul 08

Philips Semiconductors Objective specification

GSM 4 W power amplifiers CGY2010G; CGY2011G

FEATURES

• Power Amplifier (PA) overall efficiency 45%

• 35.5 dB gain

• 0 dBm input power

• Gain control range >55 dB

• Integrated power sensor driver

• Low output noise floor of PA < −129 dBm/Hz in GSM RX

band

• Wide operating temperature range −20 to +85 °C

• LQFP 48 pin package

• Compatible with power ramping controller PCA5075

• Compatible with GSM RF transceiver SA1620.

APPLICATIONS

• 880 to 915 MHz hand-held transceivers for E-GSM
applications

• 900 MHz TDMA systems.

QUICK REFERENCE DATA

SYMBOL PARAMETER

V

DD

I

DD

P

out(max)

T

amb

positive supply voltage − 4.2 − V
positive peak supply current − 1.8 − A
maximum output power − 35.5 − dBm
operating ambient temperature −20 − +85

(1)

GENERAL DESCRIPTION

The CGY2010G and CGY2011G are GSM class 4 GaAs
Monolithic Microwave Integrated Circuits (MMICs) power
amplifiers specifically designed to operate at 4.8 V battery
supply. These ICs also include a power sensor driver so
that no directional coupler is required in the power control
loop.

Both ICs have the same performance but are issued from
different wafer fabs.

The PAs require only a 30 dB harmonic low-pass filter to
comply with the GSM transmit spurious specification.
They can be switched off and their power controlled by
monitoring the actual drain voltage applied to the amplifier
stages.

MIN. TYP. MAX. UNIT

ο

C

Note

1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.

ORDERING INFORMATION

TYPE

NUMBER

CGY2010G
CGY2011G

NAME DESCRIPTION VERSION

LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm SOT313-2

PACKAGE

1996 Jul 08 2

Philips Semiconductors Objective specification

GSM 4 W power amplifiers CGY2010G; CGY2011G

BLOCK DIAGRAM

handbook, full pagewidth

RFI

(1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.

V

DD1

29 33 42

27

(1)

GND

V

DD2

V

Fig.1 Block diagram.

GG1

V

DD3

18

DETO/V

DD5

SENSOR

DRIVER

6,7.8

RFO/V

DD4

CGY2010G
CGY2011G

31

V

19

MGB761

GG2

PINNING

SYMBOL PIN DESCRIPTION

GND 1 to 5 ground
RFO/V

DD4

6 to 8 power amplifier output and fourth stage supply voltage
GND 9 to 17 ground
DETO/V
V

GG2

DD5

18 power sensor output and supply voltage

19 fourth stage negative gate supply voltage
GND 20 to 26 ground
RFI 27 power amplifier input
GND 28 ground
V

DD1

29 first stage supply voltage
GND 30 ground
V

GG1

31 first three stages negative gate supply voltage
GND 32 ground
V

DD2

33 second stage supply voltage
GND 34 to 41 ground
V

DD3

42 third stage supply voltage
GND 43 to 48 ground

1996 Jul 08 3

Philips Semiconductors Objective specification

GSM 4 W power amplifiers CGY2010G; CGY2011G

handbook, full pagewidth

RFO/V
RFO/V

RFO/V

GND
GND
GND
GND
GND

DD4
DD4

DD4

GND
GND

GND
GND

GND

GND
47

14

GND

46

15

GND

GND

GND

45

44

CGY2010G
CGY2011G

16

17

GND

GND

GND
48

1
2
3
4
5
6
7
8

9
10
11
12

13

GND

DD3

V

GND
43

42

18

19

DD5

GG2

V

DETO/V

GND
41

20

GND

GND
40

21

GND

GND
39

22

GND

GND
38

23

GND

GND

24 37

GND

36
35
34
33
32
31
30
29
28
27
26
25

MGB760

GND
GND
GND
V

DD2

GND
V

GG1

GND
V

DD1

GND
RFI
GND
GND

Fig.2 Pin configuration.

1996 Jul 08 4