Philips CGY2011G, CGY2010G Datasheet
INTEGRATED CIRCUITS
DATA SH EET
CGY2010G; CGY2011G
GSM 4 W power amplifiers
Objective specification
Supersedes data of 1995 Oct 25
File under Integrated Circuits, IC17
1996 Jul 08
Philips Semiconductors Objective specification
GSM 4 W power amplifiers CGY2010G; CGY2011G
FEATURES
• Power Amplifier (PA) overall efficiency 45%
• 35.5 dB gain
• 0 dBm input power
• Gain control range >55 dB
• Integrated power sensor driver
• Low output noise floor of PA < −129 dBm/Hz in GSM RX
band
• Wide operating temperature range −20 to +85 °C
• LQFP 48 pin package
• Compatible with power ramping controller PCA5075
• Compatible with GSM RF transceiver SA1620.
APPLICATIONS
• 880 to 915 MHz hand-held transceivers for E-GSM
applications
• 900 MHz TDMA systems.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
DD
I
DD
P
out(max)
T
amb
positive supply voltage − 4.2 − V
positive peak supply current − 1.8 − A
maximum output power − 35.5 − dBm
operating ambient temperature −20 − +85
(1)
GENERAL DESCRIPTION
The CGY2010G and CGY2011G are GSM class 4 GaAs
Monolithic Microwave Integrated Circuits (MMICs) power
amplifiers specifically designed to operate at 4.8 V battery
supply. These ICs also include a power sensor driver so
that no directional coupler is required in the power control
loop.
Both ICs have the same performance but are issued from
different wafer fabs.
The PAs require only a 30 dB harmonic low-pass filter to
comply with the GSM transmit spurious specification.
They can be switched off and their power controlled by
monitoring the actual drain voltage applied to the amplifier
stages.
MIN. TYP. MAX. UNIT
ο
C
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
TYPE
NUMBER
CGY2010G
CGY2011G
NAME DESCRIPTION VERSION
LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm SOT313-2
PACKAGE
1996 Jul 08 2
Philips Semiconductors Objective specification
GSM 4 W power amplifiers CGY2010G; CGY2011G
BLOCK DIAGRAM
handbook, full pagewidth
RFI
(1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.
V
DD1
29 33 42
27
(1)
GND
V
DD2
V
Fig.1 Block diagram.
GG1
V
DD3
18
DETO/V
DD5
SENSOR
DRIVER
6,7.8
RFO/V
DD4
CGY2010G
CGY2011G
31
V
19
MGB761
GG2
PINNING
SYMBOL PIN DESCRIPTION
GND 1 to 5 ground
RFO/V
DD4
6 to 8 power amplifier output and fourth stage supply voltage
GND 9 to 17 ground
DETO/V
V
GG2
DD5
18 power sensor output and supply voltage
19 fourth stage negative gate supply voltage
GND 20 to 26 ground
RFI 27 power amplifier input
GND 28 ground
V
DD1
29 first stage supply voltage
GND 30 ground
V
GG1
31 first three stages negative gate supply voltage
GND 32 ground
V
DD2
33 second stage supply voltage
GND 34 to 41 ground
V
DD3
42 third stage supply voltage
GND 43 to 48 ground
1996 Jul 08 3
Philips Semiconductors Objective specification
GSM 4 W power amplifiers CGY2010G; CGY2011G
handbook, full pagewidth
RFO/V
RFO/V
RFO/V
GND
GND
GND
GND
GND
DD4
DD4
DD4
GND
GND
GND
GND
GND
GND
47
14
GND
46
15
GND
GND
GND
45
44
CGY2010G
CGY2011G
16
17
GND
GND
GND
48
1
2
3
4
5
6
7
8
9
10
11
12
13
GND
DD3
V
GND
43
42
18
19
DD5
GG2
V
DETO/V
GND
41
20
GND
GND
40
21
GND
GND
39
22
GND
GND
38
23
GND
GND
24 37
GND
36
35
34
33
32
31
30
29
28
27
26
25
MGB760
GND
GND
GND
V
DD2
GND
V
GG1
GND
V
DD1
GND
RFI
GND
GND
Fig.2 Pin configuration.
1996 Jul 08 4
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