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CBT6832E |
INTEGRATED CIRCUITS |
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CBT6832E
16-bit controlled enable rate
1-of-2 multiplexer/demultiplexer with precharged outputs and Schottky undershoot protection for live insertion
Product specification |
2000 Sep 01 |
Supersedes data of 2000 May 19 |
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P s
on o s
Philips Semiconductors |
Product specification |
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16-bit controlled enable rate 1-of-2 multiplexer/demultiplexer with precharged
outputs and Schottky undershoot protection for live insertion
CBT6832E
FEATURES
•5 Ω typical ron
•Pull-up on B port
•Undershoot protection on A port only: ±2.0 V
•Near zero propagation delay
•Controlled enable rate
•VCC operating range: +4.5 V to +5.5 V
•> 100 MHz bandwidth (or clock rate) at 20 pF load capacitance
•56-pin TSSOP package
•Bias voltage pre-charges the B output when the channel is disabled
•Latch-up protection exceeds 100 mA per JESD78
•ESD protection exceeds 2000 V HBM per JESD22-A114,
200 V MM per JESD22-A115 and 1000 V CDM per JESD22-C101
APPLICATION
•Provides PCI hot-plugging
DESCRIPTION
The CBT6832E is a 16-bit controlled enable rate 1-of-2 multiplexer/demultiplexer with precharged outputs and Schottky undershoot protection for live insertion. Advantages of the CBT6832 include a propagation delay of 250 ps, resulting from 5 Ω channel resistance, and low I/O capacitance. A port demultiplexes to either 1B and 2B, or to both. The switch is bi-directional.
PIN CONFIGURATION
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1A |
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1B1 |
1 |
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56 |
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2B1 |
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1B2 |
2 |
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55 |
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2A |
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2B2 |
3 |
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54 |
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3B1 |
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3A |
4 |
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53 |
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4B1 |
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3B2 |
5 |
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52 |
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4A |
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4B2 |
6 |
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51 |
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5B1 |
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5A |
7 |
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50 |
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6B1 |
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5B2 |
8 |
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49 |
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6A |
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6B2 |
9 |
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48 |
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7B1 |
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7A |
10 |
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47 |
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8B1 |
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7B2 |
11 |
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46 |
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8A |
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8B2 |
12 |
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45 |
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GND |
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GND |
13 |
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44 |
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VCC |
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VCC |
14 |
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43 |
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9B1 |
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9A |
15 |
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42 |
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10B1 |
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9B2 |
16 |
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41 |
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10A |
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10B2 |
17 |
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40 |
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11B1 |
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11A |
18 |
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39 |
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12B1 |
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11B2 |
19 |
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38 |
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12A |
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12B2 |
20 |
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37 |
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13B1 |
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13A |
21 |
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36 |
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14B1 |
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13B2 |
22 |
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35 |
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14A |
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14B2 |
23 |
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34 |
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15B1 |
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15A |
24 |
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33 |
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16B1 |
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15B2 |
25 |
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32 |
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16A |
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16B2 |
26 |
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31 |
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VBIAS1 |
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VBIAS2 |
27 |
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30 |
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SEL1 |
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SEL2 |
28 |
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29 |
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SW00478 |
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QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYPICAL |
UNIT |
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Tamb = 25°C; GND = 0 V |
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tPLH |
Propagation delay |
CL = 50 pF; VCC = 5 V |
.25 |
ns |
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tPHL |
An to Bn or Bn to An |
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CIN |
Input capacitance control pins |
VI = 0 V or VCC |
4.5 |
pF |
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COFF B |
B capacitance, switch off |
Outputs disabled; VO = 0 V |
8 |
pF |
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COFF A |
A capacitance, switch off |
Outputs disabled; VO = 0 V |
13 |
pF |
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CON 1 |
One channel enabled capacitance |
One B enabled; VO = 0 V |
21 |
pF |
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CON 2 |
Both channels enabled capacitance |
Both B channels enabled; VO = 0 V |
34 |
pF |
ORDERING INFORMATION
PACKAGES |
TEMPERATURE RANGE |
ORDER CODE |
DWG NUMBER |
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56-Pin Plastic TSSOP Type II |
0°C to +70°C |
CBT6832E DGG |
SOT364-1 |
2000 Sep 01 |
2 |
853-2217 24481 |
Philips Semiconductors |
Product specification |
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16-bit controlled enable rate 1-of-2 multiplexer/demultiplexer with precharged
outputs and Schottky undershoot protection for live insertion
CBT6832E
PIN DESCRIPTION |
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LOGIC DIAGRAM |
PIN NUMBER SYMBOL |
NAME AND FUNCTION |
3, 6, 9, 12, 17, |
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VBIAS1 |
20, 23, 26, 33, |
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1A1±16A1 |
Inputs |
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36, 39, 42, 47, |
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50, 53, 56 |
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PULLUP |
1, 2, 4, 5, 7, 8, |
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1A |
1B1 |
10, 11, 15, 16, |
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1B1±16B1 |
Outputs |
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VBIAS2 |
18, 19, 21, 22, |
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24, 25 |
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PULLUP |
31, 32, 34, 35, |
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37, 38, 40, 41, |
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1B2±16B2 |
Outputs |
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1B2 |
45, 46, 48, 49, |
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VBIAS1 |
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51, 52, 54, 55 |
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27, 30 |
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VBIAS1, |
Precharge bias voltage inputs |
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PULLUP |
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VBIAS2 |
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16A |
16B1 |
28, 29 |
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SEL1, SEL2 |
Select-control inputs |
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VBIAS2 |
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13, 44 |
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GND |
Ground (0 V) |
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14, 43 |
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VCC |
Positive supply voltage |
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PULLUP |
FUNCTION TABLE |
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16B2 |
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SEL1 |
SEL2 |
FUNCTION |
SEL1 |
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L |
H |
nA to nB1 |
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H |
L |
nA to nB2 |
SEL2 |
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L |
L |
nA to nB1 and nB2 |
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H |
H |
nB1, nB2 = VBIAS |
SV01801 |
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
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VCC |
DC supply voltage |
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±0.5 to +7.0 |
V |
IIK |
DC input diode current |
VI < 0 |
±50 |
mA |
VI |
DC input voltage3 |
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±0.5 to +7.0 |
V |
V |
DC output voltage3 |
output in Off or High state |
±0.5 to +7.0 |
V |
OUT |
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IOUT |
DC output current |
output in Low state |
120 |
mA |
Tstg |
Storage temperature range |
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±65 to +150 |
°C |
ΘJA |
Power dissipation |
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95 |
°C/W |
NOTES:
1.Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL |
PARAMETER |
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LIMITS |
UNIT |
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MIN |
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MAX |
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VCC |
DC supply voltage |
4.5 |
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5.5 |
V |
VIH |
High-level input voltage |
2.0 |
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V |
VIL |
Low-level Input voltage |
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0.8 |
V |
Tamb |
Operating free-air temperature range |
0 |
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+70 |
°C |
2000 Sep 01 |
3 |