Philips BZX84 DATA SHEET

BZX84-A10

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BZX84 series

Voltage regulator diodes

Product specification			2003 Apr 10
Supersedes data of 1999 May 18

Philips Semiconductors	Product specification
Voltage regulator diodes	BZX84 series

FEATURES

∙Total power dissipation: max. 250 mW

∙Three tolerance series: ±1%, ±2% and approx. ±5%

∙Working voltage range: nom. 2.4 to 75 V (E24 range)

∙Non-repetitive peak reverse power dissipation: max. 40 W.

APPLICATIONS

∙ General regulation functions.

DESCRIPTION

Low-power voltage regulator diodes in small SOT23 plastic SMD packages.

The diodes are available in the normalized E24 ±1% (BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

PINNING

PIN	DESCRIPTION
1	anode
2	not connected
3	cathode

handbook, halfpage	1
2

2

n.c. 1

3

3

Top view

MAM243

Fig.1 Simplified outline (SOT23) and symbol.

2003 Apr 10

2

Philips Semiconductors						Product specification
Voltage regulator diodes						BZX84 series
MARKING
TYPE	MARKING	TYPE	MARKING	TYPE	MARKING	TYPE	MARKING
NUMBER	CODE(1)	NUMBER	CODE(1)	NUMBER	CODE(1)	NUMBER	CODE(1)
Marking codes for BZX84-A2V4 to BZX84-A75
BZX84-A2V4	Y50 or 50	BZX84-A6V2	Y60 or 60	BZX84-A16	Y70	BZX84-A43	Y80 or C5
BZX84-A2V7	Y51 or 51	BZX84-A6V8	Y61 or 61	BZX84-A18	Y71	BZX84-A47	Y81
BZX84-A3V0	Y52 or 52	BZX84-A7V5	Y62 or 62	BZX84-A20	Y72 or C2	BZX84-A51	Y82 or C6
BZX84-A3V3	Y53	BZX84-A8V2	Y63 or 63	BZX84-A22	Y73	BZX84-A56	Y83
BZX84-A3V6	Y54 or C1	BZX84-A9V1	Y64 or 64	BZX84-A24	Y74	BZX84-A62	Y84
BZX84-A3V9	Y55 or 55	BZX84-A10	Y65 or 65	BZX84-A27	Y75 or 75	BZX84-A68	Y85
BZX84-A4V3	Y56 or 56	BZX84-A11	Y66 or 04	BZX84-A30	Y76	BZX84-A75	Y86 or 86
BZX84-A4V7	Y57 or 57	BZX84-A12	Y67 or 67	BZX84-A33	Y77	−	−
BZX84-A5V1	Y58 or 58	BZX84-A13	Y68 or C0	BZX84-A36	Y78 or C3	−	−
BZX84-A5V6	Y59 or 59	BZX84-A15	Y69 or 69	BZX84-A39	Y79 or C4	−	−
Marking codes for BZX84-B2V4 to BZX84-B75
BZX84-B2V4	Z50 or Z0	BZX84-B6V2	Z60 or R5	BZX84-B16	Z70 or 70	BZX84-B43	Z80 or S5
BZX84-B2V7	Z51 or Z1	BZX84-B6V8	Z61 or R6	BZX84-B18	Z71 or 71	BZX84-B47	Z81 or S6
BZX84-B3V0	Z52 or S1	BZX84-B7V5	Z62 or R8	BZX84-B20	Z72 or 72	BZX84-B51	Z82 or S9
BZX84-B3V3	Z53 or S2	BZX84-B8V2	Z63 or R9	BZX84-B22	Z73 or 73	BZX84-B56	Z83 or R0
BZX84-B3V6	Z54 or S3	BZX84-B9V1	Z64 or T1	BZX84-B24	Z74 or 74	BZX84-B62	Z84 or R3
BZX84-B3V9	Z55 or S4	BZX84-B10	Z65 or 66	BZX84-B27	Z75 or Z5	BZX84-B68	Z85 or R4
BZX84-B4V3	Z56 or S7	BZX84-B11	Z66 or Z6	BZX84-B30	Z76 or Z4	BZX84-B75	Z86 or R7
BZX84-B4V7	Z57 or S8	BZX84-B12	Z67 or Z7	BZX84-B33	Z77 or Y1	−	−
BZX84-B5V1	Z58 or R1	BZX84-B13	Z68 or Z8	BZX84-B36	Z78 or Y2	−	−
BZX84-B5V6	Z59 or R2	BZX84-B15	Z69 or Z9	BZX84-B39	Z79 or S0	−	−
Marking codes for BZX84-C2V4 to BZX84-C75
BZX84-C2V4	Z11 or T3	BZX84-C6V2	Z4	BZX84-C16	Y5	BZX84-C43	Y15 or B4
BZX84-C2V7	Z12 or T4	BZX84-C6V8	Z5	BZX84-C18	Y6	BZX84-C47	Y16 or B5
BZX84-C3V0	Z13 or T9	BZX84-C7V5	Z6	BZX84-C20	Y7	BZX84-C51	Y17 or B7
BZX84-C3V3	Z14 or B1	BZX84-C8V2	Z7	BZX84-C22	Y8	BZX84-C56	Y18 or B8
BZX84-C3V6	Z15 or B2	BZX84-C9V1	Z8	BZX84-C24	Y9	BZX84-C62	Y19 or B9
BZX84-C3V9	Z16 or B3	BZX84-C10	Z9	BZX84-C27	Y10 or T2	BZX84-C68	Y20 or B0
BZX84-C4V3	Z17 or B6	BZX84-C11	Y1	BZX84-C30	Y11 or T5	BZX84-C75	Y21 or A1
BZX84-C4V7	Z1	BZX84-C12	Y2	BZX84-C33	Y12 or T6	−	−
BZX84-C5V1	Z2	BZX84-C13	Y3	BZX84-C36	Y13 or T7	−	−
BZX84-C5V6	Z3	BZX84-C15	Y4	BZX84-C39	Y14 or T8	−	−

Note

1.= p : Made in Hong Kong.

= t : Made in Malaysia.

= W : Made in China.

2003 Apr 10

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Philips Semiconductors				Product specification
Voltage regulator diodes				BZX84 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.	UNIT
IF	continuous forward current		−		200	mA
IZSM	non-repetitive peak reverse current	tp = 100 μs; square wave;	see Tables
		Tj = 25 °C prior to surge	1 and 2
Ptot	total power dissipation	Tamb = 25 °C; note 1	−		250	mW
PZSM	non-repetitive peak reverse power	tp = 100 μs; square wave;	−		40	W
	dissipation	Tj = 25 °C prior to surge; see Fig.2
Tstg	storage temperature		−65		+150	°C
Tj	junction temperature		−65		+150	°C

Note

1. Device mounted on an FR4 printed circuit-board.

ELECTRICAL CHARACTERISTICS

Total BZX84-A and B and C series

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MAX.	UNIT
VF	forward voltage	IF = 10 mA; see Fig.3	0.9	V
IR	reverse current
	BZX84-A/B/C2V4	VR = 1 V	50	μA
	BZX84-A/B/C2V7	VR = 1 V	20	μA
	BZX84-A/B/C3V0	VR = 1 V	10	μA
	BZX84-A/B/C3V3	VR = 1 V	5	μA
	BZX84-A/B/C3V6	VR = 1 V	5	μA
	BZX84-A/B/C3V9	VR = 1 V	3	μA
	BZX84-A/B/C4V3	VR = 1 V	3	μA
	BZX84-A/B/C4V7	VR = 2 V	3	μA
	BZX84-A/B/C5V1	VR = 2 V	2	μA
	BZX84-A/B/C5V6	VR = 2 V	1	μA
	BZX84-A/B/C6V2	VR = 4 V	3	μA
	BZX84-A/B/C6V8	VR = 4 V	2	μA
	BZX84-A/B/C7V5	VR = 5 V	1	μA
	BZX84-A/B/C8V2	VR = 5 V	700	nA
	BZX84-A/B/C9V1	VR = 6 V	500	nA
	BZX84-A/B/C10	VR = 7 V	200	nA
	BZX84-A/B/C11	VR = 8 V	100	nA
	BZX84-A/B/C12	VR = 8 V	100	nA
	BZX84-A/B/C13	VR = 8 V	100	nA
	BZX84-A/B/C15 to 75	VR = 0.7VZnom	50	nA

2003 Apr 10

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