Philips bzx55 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D176
BZX55 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors Product specification
Voltage regulator diodes BZX55 series
FEATURES
• Total power dissipation:
max. 500 mW
• Tolerance series: ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The diodes are available in the normalized E24 ±5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
• Low voltage stabilizers or voltage
references.
The diodes are type branded.
handbook, halfpage
ka
MAM239
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
P
tot
ZSM
continuous forward current − 250 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge
total power dissipation T
non-repetitive peak reverse power
dissipation
=50°C; note 1 − 400 mW
amb
T
=50°C; note 2 − 500 mW
amb
tp= 100 µs; square wave;
Tj=25°C prior to surge
t
= 8.3 ms; square wave;
p
see Table
“Per type”
− 40 W
− 30 W
Tj≤ 150 °C prior to surge
T
stg
T
j
storage temperature −65 +200 °C
junction temperature − 200 °C
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature ≤ 50 °C; lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total series
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
forward voltage IF= 100 mA; see Fig.4 − 1.0 V
1996 Apr 26 2
1996 Apr 26 3
Per type
=25°C; unless otherwise specified.
T
j
Philips Semiconductors Product specification
Voltage regulator diodes BZX55 series
BZX55-
CXXX
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
WORKING
VOLTAGE
(V)
V
Z
at I
Ztest
DIFFERENTIAL
RESISTANCE
(Ω)
r
dif
at
I
Z
at
I
Ztest
TEMP. COEFF.
SZ (mV/K)
at I
Ztest
see Figs 5 and 6
TEST
CURRENT
I
(mA)
Ztest
DIODE CAP.
Cd(pF)
at f = 1 MHz;
at VR=0V
REVERSE CURRENT at
REVERSE VOLTAGE
IR (µA)
at
Tj=25°CatTj= 150 °C
V
(V)
NON-REPETITIVE
PEAK REVERSE
CURRENT
R
at tp= 100 µs;
T
amb
I
ZSM
=25°C
MIN. MAX. MAX. MAX. TYP. MAX. MAX. MAX. MAX.
2.28 2.56 600 85 −1.8 5 450 50 100 1.0 6.0
2.5 2.9 600 85 −1.9 5 450 10 50 1.0 6.0
2.8 3.2 600 85 −2.1 5 450 4 40 1.0 6.0
3.1 3.5 600 85 −2.2 5 450 2 40 1.0 6.0
3.4 3.8 600 85 −2.4 5 450 2 40 1.0 6.0
3.7 4.1 600 85 −2.4 5 450 2 40 1.0 6.0
4.0 4.6 600 80 −2.4 5 450 1 20 1.0 6.0
4.4 5.0 600 70 −1.4 5 300 0.5 10 1.0 6.0
4.8 5.4 550 50 −0.8 5 300 0.1 2 1.0 6.0
5.2 6.0 450 30 1.6 5 300 0.1 2 1.0 6.0
5.8 6.6 200 10 2.2 5 200 0.1 2 2.0 6.0
6.4 7.2 150 8 3.0 5 200 0.1 2 3.0 6.0
7.0 7.9 50 7 3.8 5 150 0.1 2 5.0 4.0
7.7 8.7 50 7 4.5 5 150 0.1 2 6.15 4.0
8.5 9.6 50 10 5.5 5 150 0.1 2 6.8 3.0
9.4 10.6 70 15 6.5 5 90 0.1 2 7.5 3.0
10.4 11.6 70 20 7.7 5 85 0.1 2 8.25 2.5
11.4 12.7 90 20 8.4 5 85 0.1 2 9.0 2.5
12.4 14.1 110 26 9.8 5 80 0.1 2 9.75 2.5
13.8 15.6 110 30 11.3 5 75 0.1 2 11.25 2.0
15.3 17.1 170 40 12.8 5 75 0.1 2 12.0 1.5
16.8 19.1 170 50 14.4 5 70 0.1 2 13.5 1.5
18.8 21.2 220 55 16.0 5 60 0.1 2 15.0 1.5
(A)
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