Philips BZX399-C8V2, BZX399-C3V0, BZX399-C5V1, BZX399-C20 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D049
BZX399 series
Voltage regulator diodes
Product specification
1999 Jun 04
Philips Semiconductors Product specification
Voltage regulator diodes BZX399 series
FEATURES
Total power dissipation: max. 300 mW
Tolerance: ±5%
Working voltage range: nom. 1.8 to 43 V (E24 range)
Improved IZ/VZ characteristic at low currents
(IZ=50µA). This results in a noise free and sharp breakdown knee.
APPLICATIONS
General regulation functions, where low noise at low currents is required
Low power consumption applications (e.g. hand-held applications).
DESCRIPTION
Low-power low noise voltage regulator diodes in SOD323 plastic SMD package.
The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 34 types with nominal working voltages from 1.8 to 43 V.
PINNING
PIN DESCRIPTION
1 cathode 2 anode
handbook, halfpage
12
Top view
MAM387
Fig.1 Simplified outline (SOD323) and symbol.
MARKING
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
BZX399-C1V8 B1 BZX399-C4V3 B0 BZX399-C10 BJ BZX399-C24 BT BZX399-C2V0 B2 BZX399-C4V7 BA BZX399-C11 BK BZX399-C27 BU BZX399-C2V2 B3 BZX399-C5V1 BB BZX399-C12 BL BZX399-C30 BV BZX399-C2V4 B4 BZX399-C5V6 BC BZX399-C13 BM BZX399-C33 BW BZX399-C2V7 B5 BZX399-C6V2 BD BZX399-C15 BN BZX399-C36 BX BZX399-C3V0 B6 BZX399-C6V8 BE BZX399-C16 BP BZX399-C39 BY BZX399-C3V3 B7 BZX399-C7V5 BF BZX399-C18 BQ BZX399-C43 BZ BZX399-C3V6 B8 BZX399-C8V2 BG BZX399-C20 BR BZX399-C3V9 B9 BZX399-C9V1 BH BZX399-C22 BS
1999 Jun 04 2
Philips Semiconductors Product specification
Voltage regulator diodes BZX399 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on a FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS Total BZX399-C series
=25°C unless otherwise specified.
T
j
continuous forward current 250 mA non-repetitive peak reverse current tp= 100 µs; square wave;
T
=25°C prior to surge
amb
total power dissipation T
=25°C; note 1 300 mW
amb
see Tables 1 and 2
storage temperature 65 +150 °C junction temperature 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
forward voltage IF= 10 mA; see Fig.5 0.9 V
I
= 100 mA; see Fig.5 1.0 V
F
reverse current
BZX399-C1V8 V BZX399-C2V0 V BZX399-C2V2 V BZX399-C2V4 V BZX399-C2V7 V BZX399-C3V0 V BZX399-C3V3 V BZX399-C3V6 V BZX399-C3V9 V BZX399-C4V3 V BZX399-C4V7 V BZX399-C5V1 V BZX399-C5V6 V BZX399-C6V2 V BZX399-C6V8 V BZX399-C7V5 V BZX399-C8V2 V BZX399-C9V1 V BZX399-C10 V BZX399-C11 V BZX399-C12 V BZX399-C13 V BZX399-C15 to 43 V
=1V 2 µA
R
=1V 1 µA
R
=1V 0.5 µA
R
=1V 0.2 µA
R
= 1 V 0.05 µA
R
= 1 V 0.02 µA
R
=2V 2 µA
R
=2V 1 µA
R
=2V 0.5 µA
R
=2V 0.1 µA
R
=3V 2 µA
R
=3V 1 µA
R
=4V 1 µA
R
=5V 0.1 µA
R
= 5 V 0.01 µA
R
=5V 0.1 µA
R
=6V 0.2 µA
R
=7V 0.1 µA
R
=7V 0.1 µA
R
= 8 V 0.05 µA
R
= 9 V 0.05 µA
R
= 10 V 0.05 µA
R
= 0.7V
R
Znom
0.01 µA
1999 Jun 04 3
Philips Semiconductors Product specification
Voltage regulator diodes BZX399 series
Table 1 Per type BZX399-C1V8 to C15
=25°C unless otherwise specified.
T
j
BZX399-C
XXX
WORKING
VOLTAGE
V
(V)
Z
IZ=50µA
VOLTAGE
CHANGE
VZ(V)
(note 1)
TEMP. COEFF.
SZ(mV/K) IZ=50µA
(see Figs 2, 3 and 4)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
(A) at tp= 100 µs;
ZSM
T
Tol. ±5%
MIN. MAX. MAX. TYP. MAX. MAX.
1V8 1.71 1.89 0.65 0.85 425 6.0 2V0 1.90 2.10 0.70 0.95 410 6.0 2V2 2.09 2.31 0.75 1.05 390 6.0 2V4 2.28 2.52 0.80 1.15 370 6.0 2V7 2.57 2.84 0.85 1.35 350 6.0 3V0 2.85 3.15 0.90 1.50 325 6.0 3V3 3.14 3.47 0.93 1.65 310 6.0 3V6 3.42 3.78 0.95 1.80 300 6.0 3V9 3.71 4.10 0.97 1.95 290 6.0 4V3 4.09 4.52 0.99 2.05 280 6.0 4V7 4.47 4.94 0.97 1.90 275 6.0 5V1 4.85 5.36 0.60 0.15 300 5.0 5V6 5.32 5.88 0.20 1.75 275 4.0 6V2 5.89 6.51 0.10 2.35 250 3.0 6V8 6.46 7.14 0.10 3.00 215 3.0 7V5 7.13 7.88 0.15 3.60 170 3.0 8V2 7.79 8.61 0.15 4.25 150 3.0 9V1 8.65 9.56 0.10 5.00 120 3.0 10 9.50 10.50 0.10 5.80 110 3.0 11 10.45 11.55 0.11 6.70 110 2.5 12 11.40 12.60 0.12 7.65 105 2.5 13 12.35 13.65 0.13 8.60 105 2.5 15 14.25 15.75 0.15 10.50 100 2.0
amb
=25°C
Note
1. V
at 100 µA minus VZat 10 µA.
Z=VZ
1999 Jun 04 4
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