Philips BZX399-C8V2, BZX399-C3V0, BZX399-C5V1, BZX399-C20 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D049
BZX399 series
Voltage regulator diodes
Product specification
1999 Jun 04
Philips Semiconductors Product specification
Voltage regulator diodes BZX399 series
FEATURES
• Total power dissipation: max. 300 mW
• Tolerance: ±5%
• Working voltage range: nom. 1.8 to 43 V (E24 range)
• Improved IZ/VZ characteristic at low currents
(IZ=50µA). This results in a noise free and sharp
breakdown knee.
APPLICATIONS
• General regulation functions, where low noise at low
currents is required
• Low power consumption applications
(e.g. hand-held applications).
DESCRIPTION
Low-power low noise voltage regulator diodes in SOD323
plastic SMD package.
The diodes are available in the normalized E24 ±5%
tolerance range. The series consists of 34 types with
nominal working voltages from 1.8 to 43 V.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage
12
Top view
MAM387
Fig.1 Simplified outline (SOD323) and symbol.
MARKING
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
BZX399-C1V8 B1 BZX399-C4V3 B0 BZX399-C10 BJ BZX399-C24 BT
BZX399-C2V0 B2 BZX399-C4V7 BA BZX399-C11 BK BZX399-C27 BU
BZX399-C2V2 B3 BZX399-C5V1 BB BZX399-C12 BL BZX399-C30 BV
BZX399-C2V4 B4 BZX399-C5V6 BC BZX399-C13 BM BZX399-C33 BW
BZX399-C2V7 B5 BZX399-C6V2 BD BZX399-C15 BN BZX399-C36 BX
BZX399-C3V0 B6 BZX399-C6V8 BE BZX399-C16 BP BZX399-C39 BY
BZX399-C3V3 B7 BZX399-C7V5 BF BZX399-C18 BQ BZX399-C43 BZ
BZX399-C3V6 B8 BZX399-C8V2 BG BZX399-C20 BR
BZX399-C3V9 B9 BZX399-C9V1 BH BZX399-C22 BS
1999 Jun 04 2
Philips Semiconductors Product specification
Voltage regulator diodes BZX399 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on a FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX399-C series
=25°C unless otherwise specified.
T
j
continuous forward current − 250 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
T
=25°C prior to surge
amb
total power dissipation T
=25°C; note 1 − 300 mW
amb
see Tables 1 and 2
storage temperature −65 +150 °C
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
forward voltage IF= 10 mA; see Fig.5 0.9 V
I
= 100 mA; see Fig.5 1.0 V
F
reverse current
BZX399-C1V8 V
BZX399-C2V0 V
BZX399-C2V2 V
BZX399-C2V4 V
BZX399-C2V7 V
BZX399-C3V0 V
BZX399-C3V3 V
BZX399-C3V6 V
BZX399-C3V9 V
BZX399-C4V3 V
BZX399-C4V7 V
BZX399-C5V1 V
BZX399-C5V6 V
BZX399-C6V2 V
BZX399-C6V8 V
BZX399-C7V5 V
BZX399-C8V2 V
BZX399-C9V1 V
BZX399-C10 V
BZX399-C11 V
BZX399-C12 V
BZX399-C13 V
BZX399-C15 to 43 V
=1V 2 µA
R
=1V 1 µA
R
=1V 0.5 µA
R
=1V 0.2 µA
R
= 1 V 0.05 µA
R
= 1 V 0.02 µA
R
=2V 2 µA
R
=2V 1 µA
R
=2V 0.5 µA
R
=2V 0.1 µA
R
=3V 2 µA
R
=3V 1 µA
R
=4V 1 µA
R
=5V 0.1 µA
R
= 5 V 0.01 µA
R
=5V 0.1 µA
R
=6V 0.2 µA
R
=7V 0.1 µA
R
=7V 0.1 µA
R
= 8 V 0.05 µA
R
= 9 V 0.05 µA
R
= 10 V 0.05 µA
R
= 0.7V
R
Znom
0.01 µA
1999 Jun 04 3
Philips Semiconductors Product specification
Voltage regulator diodes BZX399 series
Table 1 Per type BZX399-C1V8 to C15
=25°C unless otherwise specified.
T
j
BZX399-C
XXX
WORKING
VOLTAGE
V
(V)
Z
IZ=50µA
VOLTAGE
CHANGE
∆VZ(V)
(note 1)
TEMP. COEFF.
SZ(mV/K)
IZ=50µA
(see Figs 2, 3 and 4)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
(A) at tp= 100 µs;
ZSM
T
Tol. ±5%
MIN. MAX. MAX. TYP. MAX. MAX.
1V8 1.71 1.89 0.65 −0.85 425 6.0
2V0 1.90 2.10 0.70 −0.95 410 6.0
2V2 2.09 2.31 0.75 −1.05 390 6.0
2V4 2.28 2.52 0.80 −1.15 370 6.0
2V7 2.57 2.84 0.85 −1.35 350 6.0
3V0 2.85 3.15 0.90 −1.50 325 6.0
3V3 3.14 3.47 0.93 −1.65 310 6.0
3V6 3.42 3.78 0.95 −1.80 300 6.0
3V9 3.71 4.10 0.97 −1.95 290 6.0
4V3 4.09 4.52 0.99 −2.05 280 6.0
4V7 4.47 4.94 0.97 −1.90 275 6.0
5V1 4.85 5.36 0.60 0.15 300 5.0
5V6 5.32 5.88 0.20 1.75 275 4.0
6V2 5.89 6.51 0.10 2.35 250 3.0
6V8 6.46 7.14 0.10 3.00 215 3.0
7V5 7.13 7.88 0.15 3.60 170 3.0
8V2 7.79 8.61 0.15 4.25 150 3.0
9V1 8.65 9.56 0.10 5.00 120 3.0
10 9.50 10.50 0.10 5.80 110 3.0
11 10.45 11.55 0.11 6.70 110 2.5
12 11.40 12.60 0.12 7.65 105 2.5
13 12.35 13.65 0.13 8.60 105 2.5
15 14.25 15.75 0.15 10.50 100 2.0
amb
=25°C
Note
1. ∆V
at 100 µA minus VZat 10 µA.
Z=VZ
1999 Jun 04 4
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