Philips BZV90-C7V5, BZV90-C6V8, BZV90-C68, BZV90-C15, BZV90-C30 Datasheet

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Philips BZV90-C7V5, BZV90-C6V8, BZV90-C68, BZV90-C15, BZV90-C30 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D087

BZV90 series

Voltage regulator diodes

Product specification

 

1999 May 17

Supersedes data of 1996 Oct 25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

 

Product specification

 

 

 

Voltage regulator diodes

BZV90 series

 

 

 

 

 

 

FEATURES

PINNING

 

Total power dissipation:

 

 

PIN

DESCRIPTION

max. 1500 mW

 

 

1

anode

Tolerance series: approx. ±5%

 

 

2, 4

cathode

Working voltage range:

 

 

3

anode

nom. 2.4 to 75 V (E24 range)

 

 

 

 

Non-repetitive peak reverse power dissipation: max. 40 W.

APPLICATIONS

General regulation functions.

DESCRIPTION

Medium-power voltage regulator diodes in SOT223 plastic SMD packages.

The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV90-C2V4 to C75).

handbook, halfpage

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

 

 

3

2, 4

 

 

 

 

 

 

 

 

 

 

 

 

Top view

 

 

 

 

 

MAM242

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

 

MAX.

UNIT

 

 

 

 

 

 

 

IF

continuous forward current

 

 

400

mA

IZSM

non-repetitive peak reverse current

tp = 100 μs; square wave;

see Table

 

 

 

 

Tj = 25 °C prior to surge

“Per type”

 

 

Ptot

total power dissipation

Tamb = 25 °C; note 1

 

1500

mW

PZSM

non-repetitive peak reverse power

tp = 100 μs; square wave;

 

40

W

 

dissipation

Tj = 25 °C prior to surge; see Fig.2

 

 

 

 

Tstg

storage temperature

 

65

 

+150

°C

Tj

junction temperature

 

 

150

°C

Note

1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2.

ELECTRICAL CHARACTERISTICS

Total series

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VF

forward voltage

IF = 50 mA; see Fig.3

1.0

V

1999 May 17

2

17 May 1999

3

Per type

Tj = 25 °C unless otherwise specified.

 

WORKING

DIFFERENTIAL

TEMP. COEFF.

TEST

DIODE CAP.

REVERSE

NON-REPETITIVE PEAK

 

VOLTAGE

RESISTANCE

SZ (mV/K)

CURRENT

Cd (pF)

CURRENT at

REVERSE CURRENT

BZV90-

VZ (V)

 

rdif (Ω)

 

at IZtest

 

IZtest (mA)

at f = 1 MHz;

REVERSE

IZSM (A)

at IZtest

 

at IZtest

see Figs 4 and 5

 

at VR = 0 V

VOLTAGE

at tp = 100 μs;

CXXX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tamb = 25 °C

 

 

 

 

 

 

 

 

 

 

 

IR (μA)

VR

 

 

 

 

 

 

 

 

 

 

 

 

 

MIN.

MAX.

TYP.

 

MAX.

MIN.

TYP.

MAX.

 

MAX.

MAX.

(V)

MAX.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2V4

2.2

2.6

70

 

100

3.5

1.6

0

5

450

50

1.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2V7

2.5

2.9

75

 

100

3.5

2.0

0

5

450

20

1.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3V0

2.8

3.2

80

 

95

3.5

2.1

0

5

450

10

1.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3V3

3.1

3.5

85

 

95

3.5

2.4

0

5

450

5

1.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3V6

3.4

3.8

85

 

90

3.5

2.4

0

5

450

5

1.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3V9

3.7

4.1

85

 

90

3.5

2.5

0

5

450

3

1.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4V3

4.0

4.6

80

 

90

3.5

2.5

0

5

450

3

1.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4V7

4.4

5.0

50

 

80

3.5

1.4

0.2

5

300

3

2.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5V1

4.8

5.4

40

 

60

2.7

0.8

1.2

5

300

2

2.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5V6

5.2

6.0

15

 

40

2.0

1.2

2.5

5

300

1

2.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6V2

5.8

6.6

6

 

10

0.4

2.3

3.7

5

200

3

4.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6V8

6.4

7.2

6

 

15

1.2

3.0

4.5

5

200

2

4.0

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7V5

7.0

7.9

6

 

15

2.5

4.0

5.3

5

150

1

5.0

4.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8V2

7.7

8.7

6

 

15

3.2

4.6

6.2

5

150

0.7

5.0

4.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

9V1

8.5

9.6

6

 

15

3.8

5.5

7.0

5

150

0.5

6.0

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

9.4

10.6

8

 

20

4.5

6.4

8.0

5

90

0.2

7.0

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

11

10.4

11.6

10

 

20

5.4

7.4

9.0

5

85

0.1

8.0

2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

12

11.4

12.7

10

 

25

6.0

8.4

10.0

5

85

0.1

8.0

2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

13

12.4

14.1

10

 

30

7.0

9.4

11.0

5

80

0.1

8.0

2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

13.8

15.6

10

 

30

9.2

11.4

13.0

5

75

0.05

10.5

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

16

15.3

17.1

10

 

40

10.4

12.4

14.0

5

75

0.05

11.2

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18

16.8

19.1

10

 

45

12.4

14.4

16.0

5

70

0.05

12.6

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

18.8

21.2

15

 

55

14.4

16.4

18.0

5

60

0.05

14.0

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

diodes regulator Voltage

series BZV90

Semiconductors Philips

specification Product

1999

 

WORKING

DIFFERENTIAL

TEMP. COEFF.

TEST

DIODE CAP.

REVERSE

NON-REPETITIVE PEAK

 

 

May

 

VOLTAGE

RESISTANCE

SZ (mV/K)

CURRENT

Cd (pF)

CURRENT at

REVERSE CURRENT

BZV90-

VZ (V)

 

rdif (Ω)

 

at IZtest

 

IZtest (mA)

at f = 1 MHz;

REVERSE

IZSM (A)

17

at IZtest

 

at IZtest

see Figs 4 and 5

 

at VR = 0 V

VOLTAGE

at tp = 100 μs;

CXXX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tamb = 25 °C

 

 

 

 

 

 

 

 

 

 

 

 

IR (μA)

VR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MIN.

MAX.

TYP.

 

MAX.

MIN.

TYP.

MAX.

 

MAX.

MAX.

(V)

MAX.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

22

20.8

23.3

20

 

55

16.4

18.4

20.0

5

60

0.05

15.4

1.25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

24

22.8

25.6

25

 

70

18.4

20.4

22.0

5

55

0.05

16.8

1.25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

27

25.0

28.9

25

 

80

21.4

23.4

25.3

2

50

0.05

18.9

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

28.0

32.0

30

 

80

24.4

26.6

29.4

2

50

0.05

21.0

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

33

31.0

35.0

35

 

80

27.4

29.7

33.4

2

45

0.05

23.1

0.9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

36

34.0

38.0

35

 

90

30.4

33.0

37.4

2

45

0.05

25.2

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

39

37.0

41.0

40

 

130

33.4

36.4

41.2

2

45

0.05

27.3

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

43

40.0

46.0

45

 

150

37.6

41.2

46.6

2

40

0.05

30.1

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

47

44.0

50.0

50

 

170

42.0

46.1

51.8

2

40

0.05

32.9

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

51

48.0

54.0

60

 

180

46.6

51.0

57.2

2

40

0.05

35.7

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

56

52.0

60.0

70

 

200

52.2

57.0

63.8

2

40

0.05

39.2

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

62

58.0

66.0

80

 

215

58.8

64.4

71.6

2

35

0.05

43.4

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

68

64.0

72.0

90

 

240

65.6

71.7

79.8

2

35

0.05

47.6

0.25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

75

70.0

79.0

95

 

255

73.4

80.2

88.6

2

35

0.05

52.5

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

diodes regulator Voltage

series BZV90

Semiconductors Philips

specification Product

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