Philips BZV85-C13, BZV85-C12, BZV85-C20, BZV85-C18, BZV85-C47 Datasheet

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DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D130

BZV85 series

Voltage regulator diodes

Product speciﬁcation Supersedes data of 1996 Apr 26

1999 May 11

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZV85 series

FEATURES

• Total power dissipation: max. 1.3 W

• Tolerance series: approx. ±5%

• Working voltage range:

DESCRIPTION

Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).

nom. 3.6 to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation: max. 60 W.

APPLICATIONS

• Stabilization purposes.

handbook, halfpage

The diodes are type branded.

Fig.1 Simplified outline (SOD66; DO-41) and symbol.

MAM241

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ZSM

tot

continuous forward current − 500 mA non-repetitive peak reverse current tp= 100 µs; square wave;

Tj=25°C prior to surge; see Fig.3 t

= 10 ms; half sinewave;

Tj=25°C prior to surge

total power dissipation T

=25°C; lead length 10 mm;

amb

see Table “Per type”

− 1W

note 1 note 2 − 1.3 W

T T

ZSM

stg j

non-repetitive peak reverse power dissipation

tp= 100 µs; square wave; Tj=25°C prior to surge

− 60 W

storage temperature −65 +200 °C junction temperature − 200 °C

Notes

1. Device mounted on a printed circuit-board with 1 cm

copper area per lead.

2. If the leads are kept at Ttp=55°C at 4 mm from body.

ELECTRICAL CHARACTERISTICS Total series

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

forward voltage IF= 50 mA; see Fig.4 1 V

1999 May 11 2

1999 May 11 3

Per type

=25°C unless otherwise specified.

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZV85 series

BZV85-

CXXX

WORKING

VOLTAGE

(V)

at I

Ztest

DIFFERENTIAL

RESISTANCE

(Ω)

dif

at I

Ztest

TEMP. COEFF.

(mV/K)

at I

Ztest

see Figs 5 and 6

TEST

CURRENT

(mA)

Ztest

DIODE CAP.

Cd(pF)

at f = 1 MHz;

VR=0V

REVERSE

CURRENT at

REVERSE VOLTAGE

IR (µA)

at tp= 100 µs;

(V)

NON-REPETITIVE

PEAK REVERSE CURRENT

ZSM

at tp= 10 ms;

amb

=25°C

amb

MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)

3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24

3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2000

3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950

4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850

4.4 5.0 13 −2.0 +0.7 45 300 3 1.0 8.0 1800

4.8 5.4 10 −0.5 +2.2 45 300 3 2.0 8.0 1750

5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700

5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620

6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550

7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500

7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400

8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340

9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200

10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100

11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000

12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900

13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760

15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700

16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600

18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540

20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500

22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450

27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400 30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380

=25°C

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