Philips BZV85-C16, BZV85-C15, BZV85-C22, BZV85-C4V3, BZV85-B7V5 Datasheet
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DATA SH EET
Product specification
Supersedes data of 1996 Apr 26
1999 May 11
DISCRETE SEMICONDUCTORS
BZV85 series
Voltage regulator diodes
ook, halfpage
M3D130
1999 May 11 2
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
FEATURES
• Total power dissipation:
max. 1.3 W
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 3.6 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
• Stabilization purposes.
DESCRIPTION
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx. ±5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
The diodes are type branded.
handbook, halfpage
MAM241
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
2. If the leads are kept at Ttp=55°C at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current − 500 mA
I
ZSM
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.3
see Table
“Per type”
t
p
= 10 ms; half sinewave;
Tj=25°C prior to surge
see Table
“Per type”
P
tot
total power dissipation T
amb
=25°C; lead length 10 mm;
note 1
− 1W
note 2 − 1.3 W
P
ZSM
non-repetitive peak reverse power
dissipation
tp= 100 µs; square wave;
Tj=25°C prior to surge
− 60 W
T
stg
storage temperature −65 +200 °C
T
j
junction temperature − 200 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 50 mA; see Fig.4 1 V
1999 May 11 3
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
Per type
T
j
=25°C unless otherwise specified.
BZV85-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 5 and 6
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
VR=0V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
IR (µA)
V
R
(V)
at tp= 100 µs;
T
amb
=25°C
at tp= 10 ms;
T
amb
=25°C
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
3V6
3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2000
3V9
3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950
4V3
4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850
4V7
4.4 5.0 13 −2.0 +0.7 45 300 3 1.0 8.0 1800
5V1
4.8 5.4 10 −0.5 +2.2 45 300 3 2.0 8.0 1750
5V6
5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700
6V2
5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620
6V8
6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550
7V5
7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500
8V2
7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400
9V1
8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340
10
9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200
11
10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100
12
11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000
13
12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900
15
13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760
16
15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700
18
16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600
20
18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540
22
20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500
24
22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450
27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400
30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380
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