Philips BZV85 Technical data
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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D130
BZV85 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 11
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
FEATURES
• Total power dissipation:
max. 1.3 W
• Tolerance series: approx. ±5%
• Working voltage range:
DESCRIPTION
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx. ±5% tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
nom. 3.6 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
• Stabilization purposes.
handbook, halfpage
The diodes are type branded.
ka
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
MAM241
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
continuous forward current − 500 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.3
t
= 10 ms; half sinewave;
p
Tj=25°C prior to surge
total power dissipation T
=25°C; lead length 10 mm;
amb
see Table
“Per type”
see Table
“Per type”
− 1W
note 1
note 2 − 1.3 W
P
T
T
ZSM
stg
j
non-repetitive peak reverse power
dissipation
tp= 100 µs; square wave;
Tj=25°C prior to surge
− 60 W
storage temperature −65 +200 °C
junction temperature − 200 °C
Notes
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
2. If the leads are kept at Ttp=55°C at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 50 mA; see Fig.4 1 V
1999 May 11 2
Philips Semiconductors Product specification
Voltage regulator diodes BZV85 series
=25°C
= 10 ms;
p
amb
T
at t
ZSM
I
NON-REPETITIVE
PEAK REVERSE CURRENT
REVERSE
REVERSE
CURRENT at
(pF)
d
C
DIODE CAP.
at f = 1 MHz;
VOLTAGE
=0V
R
V
= 100 µs;
at t
=25°C
p
amb
T
R
V
(V)
(µA)
R
I
(mA)
TEST
Ztest
I
CURRENT
Ztest
(mV/K)
at I
Z
S
TEMP. COEFF.
see Figs 5 and 6
(Ω)
Ztest
dif
r
at I
RESISTANCE
DIFFERENTIAL
Ztest
(V)
Z
V
at I
VOLTAGE
WORKING
=25°C unless otherwise specified.
j
Per type
T
CXXX
BZV85-
3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2000
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
3V6
3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950
3V9
4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850
4V3
4.4 5.0 13 −2.0 +0.7 45 300 3 1.0 8.0 1800
4V7
4.8 5.4 10 −0.5 +2.2 45 300 3 2.0 8.0 1750
5V1
5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700
5V6
5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620
6V2
1999 May 11 3
6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550
6V8
7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500
7V5
7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400
8V2
8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340109.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200
9V1
10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100
11
11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000
12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 9001513.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 7601615.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 7001816.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 6002018.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 5402220.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 5002422.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450
12
13
27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400
30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380
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