Philips BZV49-C33, BZV49-C2V7, BZV49-C2V4, BZV49-C24, BZV49-C5V1 Datasheet

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DATA SH EET
Product specification Supersedes data of 1996 Oct 28
1999 May 11
DISCRETE SEMICONDUCTORS
BZV49 series
Voltage regulator diodes
ook, halfpage
M3D109
1999 May 11 2
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
FEATURES
Total power dissipation: max. 1 W
Tolerance series: approx. ±5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation: max. 40 W.
APPLICATIONS
General regulation functions.
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89 plastic SMD package.
The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75).
PINNING
PIN DESCRIPTION
1 anode 2 anode 3 cathode
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
132
Bottom view
MAM244
3
1
2
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y −− BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y −− BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y −−
1999 May 11 3
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
2
; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS Total series
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current 250 mA
I
ZSM
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge
see Table “Per type”
P
tot
total power dissipation T
amb
=25°C; note 1 1W
P
ZSM
non-repetitive peak reverse power dissipation
tp= 100 µs; square wave; Tj=25°C prior to surge; see Fig.2
40 W
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 50 mA; see Fig.3 1 V
1999 May 11 4
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
Per type
T
j
=25°C unless otherwise specified.
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
()
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
Cd(pF)
at f = 1 MHz;
at VR=0V
REVERSE
CURRENT at
REVERSE VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at tp= 100 µs;
T
amb
=25°C
IR (µA)
V
R
(V)
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
2V4
2.2 2.6 70 100 3.5 1.6 0 5 450 50 1.0 6.0
2V7
2.5 2.9 75 100 3.5 2.0 0 5 450 20 1.0 6.0
3V0
2.8 3.2 80 95 3.5 2.1 0 5 450 10 1.0 6.0
3V3
3.1 3.5 85 95 3.5 2.4 0 5 450 5 1.0 6.0
3V6
3.4 3.8 85 90 3.5 2.4 0 5 450 5 1.0 6.0
3V9
3.7 4.1 85 90 3.5 2.5 0 5 450 3 1.0 6.0
4V3
4.0 4.6 80 90 3.5 2.5 0 5 450 3 1.0 6.0
4V7
4.4 5.0 50 80 3.5 1.4 +0.2 5 300 3 2.0 6.0
5V1
4.8 5.4 40 60 2.7 0.8 +1.2 5 300 2 2.0 6.0
5V6
5.2 6.0 15 40 2.0 +1.2 +2.5 5 300 1 2.0 6.0
6V2
5.8 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0
6V8
6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0
7V5
7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0
8V2
7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0
9V1
8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0
10
9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0
11
10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5
12
11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5
13
12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5
15
13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0
16
15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5
18
16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5
20
18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5
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