Philips BZV49 Technical data
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ook, halfpage
M3D109
BZV49 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Oct 28
1999 May 11
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
FEATURES
• Total power dissipation: max. 1 W
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Medium-power voltage regulator
diodes in a SOT89 plastic SMD
package.
The diodes are available in the
normalized E24 approx. ±5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV49-C2V4 to BZV49-C75).
PINNING
PIN DESCRIPTION
1 anode
2 anode
3 cathode
handbook, halfpage
132
Bottom view
Fig.1 Simplified outline (SOT89) and symbol.
1
2
3
MAM244
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y
BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y
BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y
BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y
BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y
BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y
BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y
BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y −−
BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y −−
BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y −−
1999 May 11 2
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
ELECTRICAL CHARACTERISTICS
continuous forward current − 250 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
Tj=25°C prior to surge
total power dissipation T
non-repetitive peak reverse power
dissipation
=25°C; note 1 − 1W
amb
tp= 100 µs; square wave;
Tj=25°C prior to surge; see Fig.2
see Table
“Per type”
− 40 W
storage temperature −65 +150 °C
junction temperature − 150 °C
2
; thickness = 0.7 mm.
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 50 mA; see Fig.3 1 V
1999 May 11 3
Philips Semiconductors Product specification
Voltage regulator diodes BZV49 series
(A)
=25°C
= 100 µs;
ZSM
p
I
amb
T
at t
REVERSE CURRENT
NON-REPETITIVE PEAK
R
V
(V)
REVERSE
DIODE CAP.
VOLTAGE
REVERSE
CURRENT at
=0V
(pF)
R
d
C
at V
at f = 1 MHz;
(µA)
R
I
(mA)
TEST
Ztest
I
CURRENT
Ztest
(mV/K)
at I
Z
S
TEMP. COEFF.
DIFFERENTIAL
(Ω)
dif
r
RESISTANCE
see Figs 4 and 5
Ztest
at I
Ztest
(V)
Z
V
at I
VOLTAGE
WORKING
=25°C unless otherwise specified.
j
Per type
T
CXXX
BZV49-
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0
2V4
2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0
2V7
2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0
3V0
3.1 3.5 85 95 −3.5 −2.4 0 5 450 5 1.0 6.0
3V3
3.4 3.8 85 90 −3.5 −2.4 0 5 450 5 1.0 6.0
3V6
3.7 4.1 85 90 −3.5 −2.5 0 5 450 3 1.0 6.0
3V9
4.0 4.6 80 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V3
4.4 5.0 50 80 −3.5 −1.4 +0.2 5 300 3 2.0 6.0
4V7
1999 May 11 4
4.8 5.4 40 60 −2.7 −0.8 +1.2 5 300 2 2.0 6.0
5V1
5.2 6.0 15 40 −2.0 +1.2 +2.5 5 300 1 2.0 6.0
5V6
5.8 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0
6V2
6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0
6V8
7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0
7V5
7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0
8V2
8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0109.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0
9V1
10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5
11
11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5
12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.51513.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.01615.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.51816.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.52018.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5
12
13
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