Philips BZV37 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D169
BZV37
Bidirectional voltage regulator
diode
Product specification
Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors Product specification
Bidirectional voltage regulator diode BZV37
FEATURES
• Low total power dissipation:
max. 400 mW
DESCRIPTION
Low-power voltage regulator diode in an hermetically sealed leaded glass
SOD68 (DO-34) package.
• Working voltage: nom. 6.5 V
• Non-repetitive peak reverse power
dissipation: max. 40 W
handbook, halfpage
• Bidirectional.
MAM247
APPLICATIONS
• Voltage stabilizer and transient
The diode is type branded.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
protection element.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
Z
I
ZSM
continuous working current − 50 mA
non-repetitive peak reverse current t = 30 s; t1=8µs; t2=20µs;
− 7A
Tj=25°C prior to surge; see Fig.3
t = 30 s; t
=10µs; t2= 1000 µs;
1
− 2A
Tj=25°C prior to surge; see Fig.3
P
tot
P
ZSM
T
stg
T
j
total power dissipation T
non-repetitive peak reverse power
dissipation
≤ 25 °C − 400 mW
amb
tp= 100 µs square wave; Tj=25°C
− 40 W
prior to surge; see Fig.2
storage temperature −65 +200 °C
junction temperature − 200 °C
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. NOM. MAX. UNIT
V
V
Z
(CL)R
working voltage I
clamping voltage I
= 5 mA 6.2 6.5 6.8 V
Ztest
= 7 A; t1=8µs; t2=20µs −−25 V
ZSM
= 2 A; t1=10µs;
I
ZSM
−−15 V
t2= 1000 µs
r
diff
S
Z
C
d
I
R
differential resistance I
temperature coefficient I
=5mA −−20 Ω
Ztest
=5mA −−0.1 %/K
Ztest
diode capacitance VR=0V −−150 pF
reverse current VR=4V −−10 µA
=4V; Tj= 150 °C −−30 µA
V
R
V
=2V −−3µA
R
1996 Apr 26 2
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