DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D119
BZD23 series
Voltage regulator diodes
Product specification
Supersedes data of October 1991
1996 Jun 10
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Zener working voltage range:
3.6 to 270 V for 46 types
• Transient suppressor stand-off
handbook, 4 columns
ak
MAM248
voltage range:
6.2 to 430 V for 45 types
Fig.1 Simplified outline (SOD81) and symbol.
• Available in ammo-pack.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
tot
total power dissipation Ttp=25°C; lead length 10 mm;
BZD23-C3V6 to -C6V8 − 2.0 W
see Figs 2 and 3
BZD23-C7V5 to -C510 − 2.5 W
P
tot
total power dissipation T
BZD23-C3V6 to -C6V8 − 1.0 W
=55°C; see Figs 2 and 3;
amb
PCB mounted (see Fig.7)
BZD23-C7V5 to -C510 − 1.0 W
P
ZSM
non-repetitive peak reverse
power dissipation
tp= 100 µs; square pulse;
Tj=25°C prior to surge; see Figs 4 and 5
BZD23-C3V6 to -C6V8 − 300 W
BZD23-C7V5 to -C510 − 300 W
P
RSM
non-repetitive peak reverse
power dissipation
10/1000 µs exponential pulse (see Fig.8);
Tj=25°C prior to surge
BZD23-C7V5 to -C510 − 150 W
T
stg
storage temperature
BZD23-C3V6 to -C6V8 −65 +200 °C
BZD23-C7V5 to -C510 −65 +175 °C
T
j
junction temperature
BZD23-C3V6 to -C6V8 −65 +200 °C
BZD23-C7V5 to -C510 −65 +175 °C
1996 Jun 10 2
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
ELECTRICAL CHARACTERISTICS
Total series
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
Per type when used as voltage regulator diodes
T
=25°C unless otherwise specified.
j
forward voltage IF= 0.2 A; see Fig.6 1.2 V
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
(Ω)atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
VR (V)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
C3V6 3.4 3.6 3.8 4 8 −0.14 −0.04 100 100 1
C3V9 3.7 3.9 4.1 4 8 −0.14 −0.04 100 50 1
C4V3 4.0 4.3 4.6 4 7 −0.12 −0.02 100 25 1
C4V7 4.4 4.7 5.0 3 7 −0.10 0.00 100 10 1
C5V1 4.8 5.1 5.4 3 6 −0.08 −0.02 100 5 1
C5V6 5.2 5.6 6.0 2 4 −0.04 0.04 100 10 2
C6V2 5.8 6.2 6.6 2 3 −0.01 0.06 100 5 2
C6V8 6.4 6.8 7.2 1 3 0.00 0.07 100 10 3
C7V5 7.0 7.5 7.9 1 2 0.00 0.07 100 50 3
C8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 10 3
C9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 10 5
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
9.4 10 10.6 2 4 0.05 0.09 50 7 7.5
10.4 11 11.6 4 7 0.05 0.10 50 4 8.2
11.4 12 12.7 4 7 0.05 0.10 50 3 9.1
12.4 13 14.1 5 10 0.05 0.10 50 2 10
13.8 15 15.6 5 10 0.05 0.10 50 1 11
15.3 16 17.1 6 15 0.06 0.11 25 1 12
16.8 18 19.1 6 15 0.06 0.11 25 1 13
18.8 20 21.2 6 15 0.06 0.11 25 1 15
20.8 22 23.3 6 15 0.06 0.11 25 1 16
22.8 24 25.6 7 15 0.06 0.11 25 1 18
25.1 27 28.9 7 15 0.06 0.11 25 1 20
28 30 32 8 15 0.06 0.11 25 1 22
31 33 35 8 15 0.06 0.11 25 1 24
34 36 38 21 40 0.06 0.11 10 1 27
37 39 41 21 40 0.06 0.11 10 1 30
40 43 46 24 45 0.07 0.12 10 1 33
44 47 50 24 45 0.07 0.12 10 1 36
1996 Jun 10 3
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
TYPE
No.
SUFFIX
(1)
C51
C56
C62
C68
C75
C82
C91
C100
C110
C120
C130
C150
C160
C180
C200
C220
C240
C270
WORKING VOLTAGE
VZ (V) at I
Z
DIFFERENTIAL
RESISTANCE
r
(Ω)atI
dif
TEMPERATURE
COEFFICIENT
SZ (%/K) at I
Z
Z
TEST
CURRENT
IZ (mA)
REVERSE CURRENT
at REVERSE VOLTAGE
IR (µA)
VR (V)
MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX.
48 51 54 25 60 0.07 0.12 10 1 39
52 56 60 25 60 0.07 0.12 10 1 43
58 62 66 25 80 0.08 0.13 10 1 47
64 68 72 25 80 0.08 0.13 10 1 51
70 75 79 30 100 0.08 0.13 10 1 56
77 82 87 30 100 0.08 0.13 10 1 62
85 91 96 60 200 0.09 0.13 5 1 68
94 100 106 60 200 0.09 0.13 5 1 75
104 110 116 80 250 0.09 0.13 5 1 82
114 120 127 80 250 0.09 0.13 5 1 91
124 130 141 110 300 0.09 0.13 5 1 100
138 150 156 130 300 0.09 0.13 5 1 110
153 160 171 150 350 0.09 0.13 5 1 120
168 180 191 180 400 0.09 0.13 5 1 130
188 200 212 200 500 0.09 0.13 5 1 150
208 220 233 350 750 0.09 0.13 2 1 160
228 240 256 400 850 0.09 0.13 2 1 180
251 270 289 450 1000 0.09 0.13 2 1 200
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZD23-C51.
1996 Jun 10 4
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
Per type when used as transient suppressor diodes
T
= 25°C unless otherwise specified.
j
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
V
(V)
(BR)R
at I
test
MIN. MIN. MAX. MAX. MAX.
TEMPERATURE
COEFFICIENT
SZ(%/K) at I
test
TEST
CURRENT
I
test
(mA)
CLAMPING
V
(CL)R
VOLTAGE
at I
(V)
note 1
RSM
(A)
BZD23-C7V5 7.0 0.00 0.07 100 11.3 13.3 1500 6.2
BZD23-C8V2 7.7 0.03 0.08 100 12.3 12.2 1200 6.8
BZD23-C9V1 8.5 0.03 0.08 50 13.3 11.3 100 7.5
BZD23-C10
BZD23-C11
BZD23-C12
BZD23-C13
BZD23-C15
BZD23-C16
BZD23-C18
BZD23-C20
BZD23-C22
BZD23-C24
BZD23-C27
BZD23-C30
BZD23-C33
BZD23-C36
BZD23-C39
BZD23-C43
BZD23-C47
BZD23-C51
BZD23-C56
BZD23-C62
BZD23-C68
BZD23-C75
BZD23-C82
BZD23-C91
BZD23-C100
BZD23-C110
BZD23-C120
BZD23-C130
BZD23-C150
BZD23-C160
9.4 0.05 0.09 50 14.8 10.1 20 8.2
10.4 0.05 0.10 50 15.7 9.6 5 9.1
11.4 0.05 0.10 50 17.0 8.8 5 10
12.4 0.05 0.10 50 18.9 7.9 5 11
13.8 0.05 0.10 50 20.9 7.2 5 12
15.3 0.06 0.11 25 22.9 6.6 5 13
16.8 0.06 0.11 25 25.6 5.9 5 15
18.8 0.06 0.11 25 28.4 5.3 5 16
20.8 0.06 0.11 25 31.0 4.8 5 18
22.8 0.06 0.11 25 33.8 4.4 5 20
25.1 0.06 0.11 25 38.1 3.9 5 22
28 0.06 0.11 25 42.2 3.6 5 24
31 0.06 0.11 25 46.2 3.2 5 27
34 0.06 0.11 10 50.1 3.0 5 30
37 0.06 0.11 10 54.1 2.8 5 33
40 0.07 0.12 10 60.7 2.5 5 36
44 0.07 0.12 10 65.5 2.3 5 39
48 0.07 0.12 10 70.8 2.1 5 43
52 0.07 0.12 10 78.6 1.9 5 47
58 0.08 0.13 10 86.5 1.7 5 51
64 0.08 0.13 10 94.4 1.6 5 56
70 0.08 0.13 10 103.5 1.5 5 62
77 0.08 0.13 10 114 1.3 5 68
85 0.09 0.13 5 126 1.2 5 75
94 0.09 0.13 5 139 1.1 5 82
104 0.09 0.13 5 152 1.0 5 91
114 0.09 0.13 5 167 0.90 5 100
124 0.09 0.13 5 185 0.81 5 110
138 0.09 0.13 5 204 0.73 5 120
153 0.09 0.13 5 224 0.67 5 130
REVERSE CURRENT
at STAND-OFF
VOLTAGE
(µA)
I
R
at V
R
(V)
1996 Jun 10 5
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
TYPE
NUMBER
BZD23-C180
BZD23-C200
REVERSE
BREAKDOWN
VOLTAGE
V
(V)
(BR)R
at I
test
MIN. MIN. MAX. MAX. MAX.
TEMPERATURE
COEFFICIENT
SZ(%/K) at I
test
TEST
CURRENT
I
test
(mA)
CLAMPING
V
(CL)R
VOLTAGE
at I
(V)
note 1
RSM
(A)
168 0.09 0.13 5 249 0.60 5 150
188 0.09 0.13 5 276 0.54 5 160
REVERSE CURRENT
at STAND-OFF
VOLTAGE
(µA)
I
R
BZD23-C220 208 0.09 0.13 2 305 0.50 5 180
BZD23-C240 228 0.09 0.13 2 336 0.45 5 200
BZD23-C270 251 0.09 0.13 2 380 0.40 5 220
BZD23-C300 280 0.09 0.13 2 419 0.36 5 240
BZD23-C330 310 0.09 0.13 2 459 0.33 5 270
BZD23-C360 340 0.09 0.13 2 498 0.30 5 300
BZD23-C390 370 0.09 0.13 2 537 0.28 5 330
BZD23-C430 400 0.09 0.13 2 603 0.25 5 360
BZD23-C470 440 0.09 0.13 2 655 0.23 5 390
BZD23-C510 480 0.09 0.13 2 707 0.21 5 430
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8”
(10/1000 µs pulse); see Fig.8.
at V
(V)
R
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm
BZD23-C3V6 to -C6V8 87 K/W
BZD23-C7V5 to -C510 60 K/W
R
th j-a
thermal resistance from junction to ambient note 1
BZD23-C3V6 to -C6V8 145 K/W
BZD23-C7V5 to -C510 120 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.
For more information please refer to the
“General Part of associated Handbook”
.
1996 Jun 10 6
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
GRAPHICAL DATA
handbook, halfpage
3
P
tot
(W)
2
1
0
0 200
Types BZD23-C3V6 to-C6V8
Solid line: tie-point temperature; lead length = 10 mm.
Dotted line: ambient temperature; PCB mounted as shown in Fig.7.
100
MGD522
T (°C)
Fig.2 Maximum total power dissipation as a
function of temperature.
handbook, halfpage
3
P
tot
(W)
2
1
0
0 200
Types BZD23-C7V5 to -C510
Solid line: tie-point temperature; lead length = 10 mm.
Dotted line: ambient temperature; PCB mounted as shown in Fig.7.
100
MGD523
T (°C)
Fig.3 Maximum total power dissipation as a
function of temperature.
4
10
handbook, halfpage
P
ZSM
(W)
3
10
2
10
10
−2
10
Tj=25°C prior to surge.
See also Fig.5.
−1
10
1
tp (ms)
Fig.4 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
MGD524
5V6
V
Znom
MGD525
(V)
400
handbook, halfpage
P
ZSM
(W)
300
200
100
10
0
0 3V9 4V7 6V8
3V6 4V3 6V25V1
Tj=25°C prior to surge.
Fig.5 Maximum non-repetitive peak reverse
power dissipation as a function of nominal
working voltage.
1996 Jun 10 7
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
handbook, halfpage
2
I
F
(A)
1
0
02
Tj=25°C.
1
MGD520
VF (V)
Fig.6 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
Dimensions in mm.
50
25
7
50
2
3
MGA200
Fig.7 Device mounted on a printed-circuit board.
I
handbook, halfpage
RSM
(%)
100
90
50
10
t
1
t
2
In accordance with
t1=10µs.
t2= 1000 µs.
“IEC 60-1, Section 8”
.
Fig.8 Non-repetitive peak reverse current pulse
definition.
t
MGD521
1996 Jun 10 8
Philips Semiconductors Product specification
Voltage regulator diodes BZD23 series
PACKAGE OUTLINE
andbook, full pagewidth
2.15
max
Dimensions in mm.
The marking band indicates the cathode.
5 max
3.8 max28 min 28 min
0.81
max
MBC051
Fig.9 SOD81.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 10 9
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