Philips BZB984 Technical data
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M3D793
BZB984 series
Voltage regulator double diodes
Product specification
Supersedes data of 2001 Nov 28
2002 Jun 21
Philips Semiconductors Product specification
Voltage regulator double diodes BZB984 series
FEATURES
• Total power dissipation: max. 425 mW
• Approx. 5% VZ tolerance
• Ultra small flat plastic SMD package
• Working voltage range nom. 2.4 to 15 V (E24 range).
PINNING
PIN DESCRIPTION
1 cathode 1
2 cathode 2
3 common anode
APPLICATIONS
• General regulation functions
handbook, halfpage
3
3
• ESD and surge protection.
12
DESCRIPTION
Low-power voltage regulator diodes in a SOT663 ultra
12
Top view
MHC314
small plastic SMD package.
Fig.1 Simplified outline (SOT663) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZB984-C2V4 91 BZB984-C3V9 96 BZB984-C6V2 9B BZB984-C10 9G
BZB984-C2V7 92 BZB984-C4V3 97 BZB984-C6V8 9C BZB984-C11 9H
BZB984-C3V0 93 BZB984-C4V7 98 BZB984-C7V5 9D BZB984-C12 9J
BZB984-C3V3 94 BZB984-C5V1 99 BZB984-C8V2 9E BZB984-C13 9K
BZB984-C3V6 95 BZB984-C5V6 9A BZB984-C9V1 9F BZB984-C15 9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
P
T
T
tot
ZSM
stg
j
continuous forward current − 200 mA
non-repetitive peak reverse
current
total power dissipation T
non-repetitive peak reverse
dissipation
tp= 100 µs; square wave; T
amb
=25°C;
see Table 1
prior to surge
=25°C; 2 diodes loaded; note 1 − 425 mW
amb
T
=25°C; 1 diode loaded; note 1 − 265 mW
amb
tp= 100 µs; square wave; T
amb
=25°C;
− 40 W
prior to surge
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Jun 21 2
Philips Semiconductors Product specification
Voltage regulator double diodes BZB984 series
ELECTRICAL CHARACTERISTICS
Total BZB984-C series
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
forward voltage IF= 10 mA; see Fig.2 0.9 V
reverse current
BZB984-C2V4 V
BZB984-C2V7 V
BZB984-C3V0 V
BZB984-C3V3 V
BZB984-C3V6 V
BZB984-C3V9 V
BZB984-C4V3 V
BZB984-C4V7 V
BZB984-C5V1 V
BZB984-C5V6 V
BZB984-C6V2 V
BZB984-C6V8 V
BZB984-C7V5 V
BZB984-C8V2 V
BZB984-C9V1 V
BZB984-C10 V
BZB984-C11 V
BZB984-C12 V
BZB984-C13 V
BZB984-C15 V
=1V 50 µA
R
=1V 20 µA
R
=1V 10 µA
R
=1V 5 µA
R
=1V 5 µA
R
=1V 3 µA
R
=1V 3 µA
R
=2V 3 µA
R
=2V 2 µA
R
=2V 1 µA
R
=4V 3 µA
R
=4V 2 µA
R
=5V 1 µA
R
= 5 V 700 nA
R
= 6 V 500 nA
R
= 7 V 200 nA
R
= 8 V 100 nA
R
= 8 V 100 nA
R
= 8 V 100 nA
R
= 10.5 V 50 nA
R
2002 Jun 21 3
Philips Semiconductors Product specification
Voltage regulator double diodes BZB984 series
= 100 µs;
p
=25°C
amb
T
(A) at t
ZSM
REVERSE CURRENT
I
NON-REPETITIVE PEAK
(pF)
=0V
d
R
C
DIODE CAP.
V
at f = 1 MHz;
(mV/K)
Z
S
TEMP. COEFF.
(Ω)
dif
r
DIFFERENTIAL RESISTANCE
(V)
Z
V
WORKING VOLTAGE
=5mA
Ztest
at I
=5mA
Z
at I
(see Figs 3 and 4)
=5mA
Z
=1mA atI
Z
Tol. ≈5% at I
MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
=25°C unless otherwise specified.
j
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Table 1 Per type BZB984-C2V4 to C15
T
2002 Jun 21 4
Cxxx
BZB984-
2V4 2.2 2.6 275 600 70 100 −1.3 450 6.0
2V7 2.5 2.9 300 600 75 100 −1.4 450 6.0
3V0 2.8 3.2 325 600 80 95 −1.6 450 6.0
3V3 3.1 3.5 350 600 85 95 −1.8 450 6.0
3V6 3.4 3.8 375 600 85 90 −1.9 450 6.0
3V9 3.7 4.1 400 600 85 90 −1.9 450 6.0
4V3 4.0 4.6 410 600 80 90 −1.7 450 6.0
4V7 4.4 5.0 425 500 50 80 −1.2 300 6.0
5V1 4.8 5.4 400 480 40 60 −0.5 300 6.0
5V6 5.2 6.0 80 400 15 40 1.0 300 6.0
6V2 5.8 6.6 40 150 6 10 2.2 200 6.0
6V8 6.4 7.2 30 80 6 15 3.0 200 6.0
7V5 7.0 7.9 30 80 6 15 3.6 150 4.0
8V2 7.7 8.7 40 80 6 15 4.3 150 4.0
9V1 8.5 9.6 40 100 6 15 5.2 150 3.0
10 9.4 10.6 50 150 8 20 6.0 90 3.0
11 10.4 11.6 50 150 10 20 6.9 90 2.5
12 11.4 12.7 50 150 10 25 7.9 85 2.5
13 12.4 14.1 50 170 10 30 8.8 80 2.5
15 13.8 15.6 50 200 10 30 10.7 75 2.0
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