Philips BZB784 Technical data
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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
BZB784 series
Voltage regulator double diodes
Product specification
Supersedes data of 2000 May 24
2001 Feb 27
Philips Semiconductors Product specification
Voltage regulator double diodes BZB784 series
FEATURES
• Total power dissipation: max. 350 mW
• Approx. 5% VZtolerance
• Working voltage range: nom. 2.4 to 15 V (E24 range).
PINNING SOT323 (SC-70)
PIN DESCRIPTION
1 cathode
2 cathode
3 common anode
APPLICATIONS
• General regulation functions
• ESD and surge protection.
handbook, halfpage
3
3
DESCRIPTION
Low-power voltage regulator diodes in a small SOT323
(SC-70) package.
21
Top view
MAM407
Fig.1 Simplified outline and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZB784-C2V4 91 BZB784-C3V9 96 BZB784-C6V2 9B BZB784-C10 9G
BZB784-C2V7 92 BZB784-C4V3 97 BZB784-C6V8 9C BZB784-C11 9H
BZB784-C3V0 93 BZB784-C4V7 98 BZB784-C7V5 9D BZB784-C12 9J
BZB784-C3V3 94 BZB784-C5V1 99 BZB784-C8V2 9E BZB784-C13 9K
BZB784-C3V6 95 BZB784-C5V6 9A BZB784-C9V1 9F BZB784-C15 9L
21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
P
T
T
tot
ZSM
stg
j
continuous forward current − 200 mA
non-repetitive peak reverse current tp= 100 µs; square wave;
T
=25°C; prior to surge
amb
total power dissipation; note 1 T
non-repetitive peak reverse
dissipation
=25°C; 2 diodes loaded − 350 mW
amb
T
=25°C; 1 diode loaded − 180 mW
amb
tp= 100 µs; square wave;
T
=25°C; prior to surge
amb
see Table 1
− 40 W
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
2001 Feb 27 2
Philips Semiconductors Product specification
Voltage regulator double diodes BZB784 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
R
th j-a
Notes
1. Solder points on cathode tabs.
2. Device mounted on a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Total BZB784-C series
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
thermal resistance from junction to soldering point 2 diodes loaded; note 1 140 K/W
1 diode loaded; note 1 265 K/W
thermal resistance from junction to ambient 2 diodes loaded; note 2 355 K/W
1 diode loaded; note 2 680 K/W
forward voltage IF= 10 mA; see Fig.2 0.9 V
reverse current
BZB784-C2V4 V
BZB784-C2V7 V
BZB784-C3V0 V
BZB784-C3V3 V
BZB784-C3V6 V
BZB784-C3V9 V
BZB784-C4V3 V
BZB784-C4V7 V
BZB784-C5V1 V
BZB784-C5V6 V
BZB784-C6V2 V
BZB784-C6V8 V
BZB784-C7V5 V
BZB784-C8V2 V
BZB784-C9V1 V
BZB784-C10 V
BZB784-C11 V
BZB784-C12 V
BZB784-C13 V
BZB784-C15 V
=1V 50 µA
R
=1V 20 µA
R
=1V 10 µA
R
=1V 5 µA
R
=1V 5 µA
R
=1V 3 µA
R
=1V 3 µA
R
=2V 3 µA
R
=2V 2 µA
R
=2V 1 µA
R
=4V 3 µA
R
=4V 2 µA
R
=5V 1 µA
R
= 5 V 700 nA
R
= 6 V 500 nA
R
= 7 V 200 nA
R
= 8 V 100 nA
R
= 8 V 100 nA
R
= 8 V 100 nA
R
= 10.5V 50 nA
R
2001 Feb 27 3
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