Philips BZA868A, BZA862A, BZA856A, BZA820A Datasheet
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
MBD127
BZA800A-series
Quadruple ESD transient voltage
suppressor
Preliminary specification 1999 Nov 15
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage
suppressor
FEATURES
• ESD rating >8 kV, according to IEC1000-4-2
• SOT353 (SC-88A) surface mount package
• Common anode configuration
APPLICATIONS
• Computers and peripherals
• Audio and video equipment
• Communication systems
• Medical equipment.
DESCRIPTION
Monolithic transient voltage suppressor diode in a six lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
MARKING
BZA800A-series
PINNING
PIN DESCRIPTION
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
13
4
Top view
2
5
handbook, halfpage
c
2
1
b
2
3
4
b
1
5
e
1
c1/e
2
MAM212
2
TYPE NUMBER MARKING CODE
BZA856A Z1
BZA862A Z2
BZA868A Z3
BZA820A Z4
Fig.1 Simplified outline SOT353 (SC-88A)
1999 Nov 15 2
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
working current Ta=25°C − note 1 mA
continuous forward current Ta=25°C − 100 mA
non-repetitive peak forward current tp= 1 ms; square pulse − 3.75 A
total power dissipation Ta=25°C − 335 mW
non repetitive peak reverse power
square pulse; tp= 1 ms; see Fig.3
dissipation
BZA856A, BZA862A, BZA868A − 24 W
BZA820A − 17 W
Notes
1. DC working current limited by P
tot max
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
all diodes loaded 370 K/W
ambient
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
= 25 °C unless otherwise specified
T
j
TYPE
forward voltage IF= 200 mA 1.3 V
reverse current
BZA856A V
BZA862A V
BZA868A V
BZA820A V
WORKING VOLTAGE
(V)
V
Z
at I
=1mA
Z
DIFFERENTIAL
RESISTANCE
r
at I
Z
(Ω)
dif
=1mA
= 3 V 2000 nA
R
= 4 V 700 nA
R
= 4.3 V 500 nA
R
= 15 V 100 nA
R
TEMP. COEFF.
(mV/K)
S
Z
at I
=1mA
Z
DIODE CAP.
(pF)
C
d
at f = 1 MHz;
V
=0V
R
NON-REPETITIVE P EAK
REVERSE CURRENT
(A) at tp=1ms;
I
ZSM
T
=25°C
amb
MIN. TYP. MAX. MAX. TYP. MAX. MAX.
BZA856A 5.32 5.6 5.88 400 0.5 240 3.2
BZA862A
5.89 6.2 6.51 300 1.2 200 2.9
BZA868A 6.46 6.8 7.14 300 3 180 2.6
BZA820A 19 20 21 125 16 50 0.6
1999 Nov 15 3
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