Philips BZA800A-series Datasheet
DATA SHEET
Preliminary specification 2000 Apr 18
DISCRETE SEMICONDUCTORS
BZA800A-series
Quadruple ESD transient voltage
suppressor
ook, halfpage
MBD127
2000 Apr 18 2
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage
suppressor
BZA800A-series
FEATURES
• ESD rating >8 kV, according to IEC1000-4-2
• SOT353 (SC-88A) surface mount package
• Common anode configuration
APPLICATIONS
• Computers and peripherals
• Audio and video equipment
• Communication systems
• Medical equipment.
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BZA856A Z1
BZA862A Z2
BZA868A Z3
BZA820A Z4
PIN DESCRIPTION
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
handbook, halfpage
13
5
4
2
Top view
MAM212
c
2
b
2
c1/e
2
b
1
e
1
Fig.1 Simplified outline SOT353 (SC-88A)
1
2
3
4
5
2000 Apr 18 3
Philips Semiconductors Preliminary specification
Quadruple ESD transient voltage suppressor BZA800A-series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. DC working current limited by P
tot max
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
Z
working current Ta=25°C − note 1 mA
I
F
continuous forward current Ta=25°C − 200 mA
I
FSM
non-repetitive peak forward current tp= 1 ms; square pulse − 3.75 A
P
tot
total power dissipation Ta=25°C − 335 mW
P
ZSM
non repetitive peak reverse power
dissipation
square pulse; tp= 1 ms; see Fig.3
BZA856A, BZA862A, BZA868A − 24 W
BZA820A − 17 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
T
j
= 25 °C unless otherwise specified
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
all diodes loaded 370 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF= 200 mA 1.3 V
I
R
reverse current
BZA856A V
R
= 3 V 2000 nA
BZA862A V
R
= 4 V 700 nA
BZA868A V
R
= 4.3 V 200 nA
BZA820A V
R
= 15 V 100 nA
TYPE
WORKING VOLTAGE
V
Z
(V)
at I
Z
=1mA
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Z
=1mA
TEMP. COEFF.
S
Z
(mV/K)
at I
Z
=1mA
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
=0V
NON-REPETITIVE P EAK
REVERSE CURRENT
I
ZSM
(A) at tp=1ms;
T
amb
=25°C
MIN. TYP. MAX. MAX. TYP. MAX. MAX.
BZA856A 5.32 5.6 5.88 400 −0.2 240 3.2
BZA862A 5.89 6.2 6.51 300 1.8 200 2.9
BZA868A 6.46 6.8 7.14 200 3 180 2.6
BZA820A 19 20 21 125 16 50 0.6
Loading...