Philips BZA800AL User Manual

DATA SH EET
ook, halfpage
MBD127
DISCRETE SEMICONDUCTORS
BZA800AL series
Quadruple ESD transient voltage suppressor
Product data sheet 2002 Jan 11
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage suppressor

FEATURES

ESD rating >8 kV contact discharge, according to IEC1000-4-2
SOT353 (SC-88A) surface mount package
Common anode configuration.

APPLICATIONS

Computers and peripherals
Audio and video equipment
Communication systems.

DESCRIPTION

Monolithic transient voltage suppress or diode in a five lead SOT353 (SC-88A) package for 4-bit wide ESD transie nt suppression.

MARKING

T YPE NUMBER MARKING CODE
BZA856AL M1 BZA862AL M2 BZA868AL M3
BZA800AL series

PINNING

PIN DESCRIPTION
1 cathode 1 2 common anode 3 cathode 2 4 cathode 3 5 cathode 4
handbook, halfpage
5

Fig.1 Simplified outline (SOT353) and symbol.

4
1 3 4 5
31
2
2
MGT580

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
Z
I
F
I
FSM
P P
tot ZSM
working current T continuous forward current T
= 25 °C note 1 mA
amb
= 25 °C 200 mA
amb
non-repetitive peak forward current tp = 1 ms; square pulse 4 A total power dissipation T non repetitive peak reverse power
= 25 °C; note 2; see Fig.5 300 mW
amb
square pulse; tp = 1 ms; see Fig.3
dissipation:
BZA856AL 16 W BZA862AL 15 W BZA868AL 14 W
T
stg
T
j
storage temperature −65 +150 °C junction temperature 150 °C

Notes

1. DC working current limited by P
tot(max)
.

2. Device mounted on standard printed-circuit bo ard.

2002 Jan 11 2
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
BZA800AL series
suppressor

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s

Note

1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
V
Z
r
dif
S
Z
C
d
I
ZSM
thermal resistance from junction to ambient all diodes loaded 410 K/W thermal resistance from junction to solder point;
1
note
one diode loaded 200 K/W all diodes loaded 185 K/W
forward voltage IF = 200 mA 1.3 V reverse current
BZA856AL VR = 3 V 1 000 nA BZA862AL VR = 4 V 500 nA BZA868AL VR = 4.3 V 100 nA
working voltage IZ = 1 mA
BZA856AL 5.32 5.6 5.88 V BZA862AL 5.89 6.2 6.51 V BZA868AL 6.46 6.8 7.14 V
differential resistance IZ = 1 mA
BZA856AL 400 BZA862AL 300 BZA868AL 200
temperature coefficient IZ = 1 mA
BZA856AL 0.3 mV/K BZA862AL 1.6 mV/K BZA868AL 2.2 mV/K
diode capacitance f = 1 MHz; VR = 0
BZA856AL 125 pF BZA862AL 105 pF BZA868AL 90 pF
non-repetitive peak reverse current tp = 1 ms; T
amb
= 25 °C BZA856AL 2.2 A BZA862AL 2.1 A BZA868AL 2 A
2002 Jan 11 3
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage suppressor
10
handbook, halfpage
I
ZSM
(A)
1
1
10
2
10
BZA862AL
1
10
1
MLD790
BZA856AL
BZA868AL
tp (ms)
10
2
10
handbook, halfpage
P
ZSM (W)
10
1
2
10
P
= V
ZSM
V
ZSM
× I
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
1
10
.
BZA800AL series
MLD791
BZA856AL
BZA862AL
BZA868AL
ZSM
10
.
1
tp (ms)
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
120
handbook, halfpage
C
d
(pF)
80
BZA856AL
40
0
02
48
BZA862AL
BZA868AL
6
VR (V)
MLD792
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse duration (square pulse).
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
050
100 150
T
amb
MLD793
(°C)
Tj = 25 °C; f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Power derating curve.
2002 Jan 11 4
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage suppressor
handbook, full pagewidth
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
ESD TESTER DIGITIZING
R
Z
C
Z
vertical scale = 100 V/div horizontal scale = 50 ns/div
450
1/4 BZA800AL
RG 223/U 50 coax
BZA800AL series
10×
ATTENUATOR
note 1
Note 1: attenuator is only used for open socket high voltage measurements
BZA868AL
OSCILLOSCOPE
50
vertical scale = 5 V/div horizontal scale = 50 ns/div
GND
unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
GND
unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network)
vertical scale = 100 V/div horizontal scale = 50 ns/div
BZA862AL
BZA856AL
clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
GND
clamped 1 kV ESD voltage waveform (IEC 61000-4-2 network)
vertical scale = 5 V/div horizontal scale = 50 ns/div
MLD794
Fig.6 ESD clamping test set-up and waveforms.
2002 Jan 11 5
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
BZA800AL series
suppressor
APPLICATION INFORMATION Typical common anode application
A quadruple transient suppressor in a SOT353 (SC88A) package makes it possible to protect four separate lines using only one package. A simplified example is shown in Fig
handbook, full pagewidth
keyboard,
terminal,
printer,
etc.
I/O
7.
BZA800AL
A B C D
FUNCTIONAL
DECODER
MLD795
GND

Fig.7 Computer interface protection.

Device placement and printed-circuit board layout

Circuit board layout is of extreme importance in the suppression of transients. The clampi ng voltage of the BZA800 AL is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can furthe r add to the clamping voltage (V
= L di/dt) the series conductor lengths on the printed-circuit board should be kept to a
minimum. This includes the lead length of the suppression eleme nt. In addition to minimizing conductor length the following printed-circu i t board layout guidelines are recommended:

1. Place the suppression element close to the input terminals or connectors

2. Keep parallel signal paths to a minimum

3. Avoid running protection conductors in parallel with unprotected conductors

4. Minimize all printed-circuit board loop areas including power and ground loops

5. Minimize the length of the transient return path to ground

6. Avoid using shared transient return paths to a common ground point.

2002 Jan 11 6
NXP Semiconductors Product data sheet
Plastic surface mounted package; 5 leads SOT353
Quadruple ESD transient voltage
BZA800AL series
suppressor

PACKAGE OUTLINE

y
D
E
H
E
AB
45
X
v
M
A
132
e
1
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
A
1.1
0.8
max
0.1
1
b
p
0.30
0.25
0.20
0.10
b
p
e
cD
2.2
1.8
A
wB
M
0 1 2 mm
scale
E
1.35
1.15
(2)
1.3
e
0.65
H
E
1
2.2
0.45
2.0
0.15
e
Q
A
1
c
L
p
detail X
L
Qywv
p
0.25
0.15
0.2 0.10.2
OUTLINE
VERSION
SOT353
REFERENCES
IEC JEDEC EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28SC-88A
2002 Jan 11 7
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
BZA800AL series
suppressor

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document co ntains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be su itable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveya nce or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC the device. Limiting values are stress ratings only an d operation of the device at these or any other conditions
2002 Jan 11 8
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccur ate a nd re li a ble and may be chan ged without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industri al or intellectual property rights.

Printed in The Netherlands 613514/01/pp9 Date of release: 2002 Jan 11 Document order number: 9397 750 09173

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