Philips BZA800AL User Manual
DATA SH EET
ook, halfpage
MBD127
DISCRETE SEMICONDUCTORS
BZA800AL series
Quadruple ESD transient voltage
suppressor
Product data sheet 2002 Jan 11
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor
FEATURES
• ESD rating >8 kV contact discharge, according to
IEC1000-4-2
• SOT353 (SC-88A) surface mount package
• Common anode configuration.
APPLICATIONS
• Computers and peripherals
• Audio and video equipment
• Communication systems.
DESCRIPTION
Monolithic transient voltage suppress or diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transie nt
suppression.
MARKING
T YPE NUMBER MARKING CODE
BZA856AL M1
BZA862AL M2
BZA868AL M3
BZA800AL series
PINNING
PIN DESCRIPTION
1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4
handbook, halfpage
5
Fig.1 Simplified outline (SOT353) and symbol.
4
1
3
4
5
31
2
2
MGT580
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
Z
I
F
I
FSM
P
P
tot
ZSM
working current T
continuous forward current T
= 25 °C − note 1 mA
amb
= 25 °C − 200 mA
amb
non-repetitive peak forward current tp = 1 ms; square pulse − 4 A
total power dissipation T
non repetitive peak reverse power
= 25 °C; note 2; see Fig.5 − 300 mW
amb
square pulse; tp = 1 ms; see Fig.3
dissipation:
BZA856AL − 16 W
BZA862AL − 15 W
BZA868AL − 14 W
T
stg
T
j
storage temperature −65 +150 °C
junction temperature − 150 °C
Notes
1. DC working current limited by P
tot(max)
.
2. Device mounted on standard printed-circuit bo ard.
2002 Jan 11 2
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
BZA800AL series
suppressor
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
R
th j-s
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
V
Z
r
dif
S
Z
C
d
I
ZSM
thermal resistance from junction to ambient all diodes loaded 410 K/W
thermal resistance from junction to solder point;
1
note
one diode loaded 200 K/W
all diodes loaded 185 K/W
forward voltage IF = 200 mA − − 1.3 V
reverse current
BZA856AL VR = 3 V − − 1 000 nA
BZA862AL VR = 4 V − − 500 nA
BZA868AL VR = 4.3 V − − 100 nA
working voltage IZ = 1 mA
BZA856AL 5.32 5.6 5.88 V
BZA862AL 5.89 6.2 6.51 V
BZA868AL 6.46 6.8 7.14 V
differential resistance IZ = 1 mA
BZA856AL − − 400 Ω
BZA862AL − − 300 Ω
BZA868AL − − 200 Ω
temperature coefficient IZ = 1 mA
BZA856AL − 0.3 − mV/K
BZA862AL − 1.6 − mV/K
BZA868AL − 2.2 − mV/K
diode capacitance f = 1 MHz; VR = 0
BZA856AL − − 125 pF
BZA862AL − − 105 pF
BZA868AL − − 90 pF
non-repetitive peak reverse current tp = 1 ms; T
amb
= 25 °C
BZA856AL − − 2.2 A
BZA862AL − − 2.1 A
BZA868AL − − 2 A
2002 Jan 11 3
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