Philips BZA420A Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D302

BZA420A

Quadruple ESD transient voltage
suppressor

Product specification
Supersedes data of 1998 Oct 30

1999 May 20

Philips Semiconductors Product specification

Quadruple ESD transient voltage suppressor BZA420A

FEATURES

• ESD rating >8 kV, according to IEC1000-4-2

• SOT457 surface mount package

• Common anode configuration

• Non-clamping range −0.5 to 20 V

• Maximum reverse peak power dissipation:

19.6 W at tp=1ms

• Maximum clamping voltage at peak pulse current:
28 V at I

ZSM

= 0.7 A.

APPLICATIONS

• Computers and peripherals

• Audio and video equipment

• Communication systems

• Medical equipment.

DESCRIPTION

Monolithic transient voltage suppressor diode in a six lead
SOT457 (SC-74) package for 4-bit wide ESD transient
suppression at 20 V level.

PINNING

PIN DESCRIPTION

1 cathode 1
2 common
3 cathode 2
4 cathode 3
5 common
6 cathode 4

handbook, halfpage

132

Top view

Marking code: Z0.

56

4

1
3
4
6

MAM357

Fig.1 Simplified outline (SOT457) and symbol.

2
5

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

I

Z

I

F

I

FSM

working current Ts=60°C; note 1 − note 2 mA
continuous forward current Ts=60°C − 100 mA
non-repetitive peak forward

tp= 1 ms; square pulse − 3.75 A

current

I

ZSM

non-repetitive peak reverse

tp= 1 ms; square pulse; see Fig.2 − 0.7 A

current
P
P

tot
ZSM

total power dissipation Ts=60°C; see Fig.3 − 720 mW

non repetitive peak reverse power

square pulse; tp= 1 ms; see Fig.4 − 19.6 W

dissipation
T

stg

T

j

storage temperature −65 +150 °C

junction temperature −65 +150 °C

Notes

1. T

is the temperature at the soldering point of the anode pin.

s

2. DC working current limited by P

tot max

.

1999 May 20 2

Philips Semiconductors Product specification

Quadruple ESD transient voltage suppressor BZA420A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per diode

V

Z

V

F

V

ZSM

I

R

r

dif

S

Z

C

d

thermal resistance from junction to soldering point one or more diodes loaded 125 K/W

working voltage IZ= 1 mA 19 20 21 V

forward voltage IF= 200 mA −−1.3 V

non-repetitive peak reverse voltage I

= 0.7 A; tp=1ms −−28 V

ZSM

reverse current VR=15V −−100 nA

differential resistance IZ=1mA −−125 Ω

temperature coefficient of working

IZ=5mA − 16.2 − mV/K

voltage

diode capacitance see Fig.5

V

= 0; f = 1 MHz −−48 pF

R

V

= 15 V; f = 1 MHz −−14 pF

R

1999 May 20 3

Philips Semiconductors Product specification

Quadruple ESD transient voltage suppressor BZA420A

10

handbook, halfpage

I

ZSM

(A)

1

−1

10

−1

10

110

tp (ms)

Fig.2 Maximum non-repetitive peak reverse

current as a function of pulse time.

MDA197

1000

handbook, halfpage

P

tot

(mW)

800

600

400

200

0

0 50 100 200

All diodes loaded.

150

Ts (

Fig.3 Power derating curve.

MDA198

o

C)

2

10

handbook, halfpage

P

ZSM

(W)

10

1

−1

10

P

ZSM=VZSM

V

ZSM

× I

.

is the non-repetitive peak reverse voltage at I

ZSM

110

tp (ms)

ZSM

Fig.4 Maximum non-repetitive peak reverse

power dissipation as a function of pulse
duration (square pulse).

MDA199

.

50

handbook, halfpage

C

d

(pF)

40

30

20

10

0

0510

Tj=25°C; f = 1 MHz.

MDA200

V

(V)

R

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

15

1999 May 20 4