Philips BZA408B Datasheet

DATA SH EET

ook, halfpage

M3D302

BZA408B

Quadruple bidirectional ESD
transient voltage suppressor

Product specification
Supersedes data of 1998 Jun 05

1998 Oct 15

Philips Semiconductors Product specification

Quadruple bidirectional ESD transient
voltage suppressor

FEATURES

• ESD rating >15 kV, according to IEC1000-4-2

• SOT457 surface mount package

• Non-clamping range: −5Vto+5V

• Channel separation: >70 dB

• Low reverse current: <100 nA

• Low diode capacitance: <75 pF.

APPLICATIONS

• Protection of equipment, connected to data and
transmission lines, against voltage surges caused by
electrostatic discharge e.g:

– Computers and peripherals
– Audio and video equipment
– Communication systems
– Medical equipment
– Portable electronics.

PINNING

PIN DESCRIPTION

1 cathode 1

2, 5 ground

3 cathode 2
4 cathode 3
6 cathode 4

handbook, halfpage

Top view

56

4

132

BZA408B

456

132

MAM409

DESCRIPTION

4-bit wide monolithic bidirectional ESD transient voltage

Marking code: Z8.

Fig.1 Simplified outline (SOT457) and symbol.

suppressor in a six lead SOT457 (SC-74) package.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode (pin 2 and / or 5 connected to ground)

I

ZSM

P

ZSM

T

stg

T

j

non-repetitive peak reverse current tp= 1 ms; square pulse; see Fig.2 − 2A
non-repetitive peak power tp= 1 ms; square pulse − 20 W
storage temperature −65 +150 °C
junction temperature −65 +150 °C

1998 Oct 15 2

Philips Semiconductors Product specification

Quadruple bidirectional ESD transient

BZA408B

voltage suppressor

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode (pin 2 and / or 5 connected to ground)

V

RWM

V

R

V

ZSM

I

R

C

d

α

ch (p to p)

thermal resistance from junction to soldering point one or more diodes loaded 340 K/W

working reverse voltage − 5V
reverse voltage I
non-repetitive peak reverse voltage tp= 1 ms; I
reverse current VR=V

= 5 mA 5.5 − V

test

=2A − 10 V

ZSM

RWM

− 100 nA

diode capacitance see Fig.3

V

= 0; f = 1 MHz − 75 pF

R

= 5 V; f = 1 MHz − 55 pF

V

R

pin to pin channel separation note 1; see Fig.4 70 − dB

Note

1. α

ch (p top)

is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of
1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input
impedance of 1 MΩ. So α

ch (p to p)

equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz

signal the same measurement is done in the opposite way.

1998 Oct 15 3

Philips Semiconductors Product specification

Quadruple bidirectional ESD transient
voltage suppressor

GRAPHICAL DATA

10

handbook, halfpage

I

ZSM

(A)

1

−1

10

−2

10

−1

10

110

MGR557

t

(ms)

p

80

handbook, halfpage

C

d

(pF)

60

40

20

0

BZA408B

MGR558

15

234

VR (V)

Fig.2 Maximum non-repetitive peak reverse

current as a function of pulse time.

handbook, full pagewidth

SIGNAL

GENERATOR

600 Ω

f = 1 kHz

−7 dBs

Tj=25°C; f = 1 MHz.

Fig.3 Diode capacitance as a function of reverse

voltage; typical values.

coaxial cable with

SMB connector

DUT

1

2

3

6

5

4

SPECTRUM

ANALYZER

SIGNAL

GENERATOR

600 Ω

f = 400 Hz

−7 dBs

1 MΩ

MGR556

Fig.4 Channel separation measurement setup.

1998 Oct 15 4