Philips byv79e DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYV79E series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.9 V
• Reverse surge capability
• High thermal cycling performance I
• Low thermal resistance
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
k a
12
= 14 A
F(AV)
I
≤ 0.2 A
RRM
trr ≤ 30 ns
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
tab
in high frequency switched mode 1 cathode
power supplies.
2 anode
The BYV79E series is supplied in
the conventional leaded SOD59 tab cathode
(TO220AC) package.
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
F(AV)
I
FRM
RRM
RWM
R
Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage Tmb ≤ 145˚C - 150 200 V
Average forward current
1
square wave - 14 A
δ = 0.5; Tmb ≤ 120 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 28 A
Tmb ≤ 120 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 150 A
current t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
I
RRM
I
RSM
T
T
stg
j
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
RWM(max)
1. Neglecting switching and reverse current losses.
BYV79E -150 -200
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
July 1998 1 Rev 1.200
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
Philips Semiconductors Product specification
Rectifier diodes BYV79E series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
Thermal resistance junction to - - 2 K/W
mounting base
Thermal resistance junction to in free air - 60 - K/W
ambient
Forward voltage IF = 14 A; Tj = 150˚C - 0.83 0.90 V
IF = 14 A - 0.95 1.05 V
IF = 50 A - 1.2 1.4 V
Reverse current VR = V
VR = V
; Tj = 100 ˚C - 0.5 1.3 mA
RWM
RWM
-550µA
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 15 nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 30 ns
-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
= 0.25 A - 13 22 ns
rec
July 1998 2 Rev 1.200
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