Philips byv79 DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYV79 series
ultrafast
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rectifier diodes in a plastic envelope,
featuring low forward voltage drop, BYV79- 100 150 200
ultra-fast recovery times and soft V
RRM
recovery characteristic. They are voltage
intended for use in switched mode V
power supplies and high frequency I
circuits in general where low t
conduction and switching losses are
F
F(AV)
rr
essential.
PINNING - TO220AC PIN CONFIGURATION SYMBOL
Repetitive peak reverse 100 150 200 V
Forward voltage 0.9 0.9 0.9 V
Forward current 14 14 14 A
Reverse recovery time 30 30 30 ns
PIN DESCRIPTION
tab
1 cathode (k)
2 anode (a)
ka
tab cathode (k)
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-100 -150 -200
V
RRM
V
RWM
V
R
I
F(AV)
I
F(RMS)
I
FRM
I
FSM
I2t I2t for fusing t = 10 ms - 112 A2s
T
stg
T
j
Repetitive peak reverse voltage - 100 150 200 V
Crest working reverse voltage - 100 150 200 V
Continuous reverse voltage
Average forward current
1
2
square wave; δ = 0.5; - 14 A
- 100 150 200 V
Tmb ≤ 120 ˚C
sinusoidal; a = 1.57; - 12.7 A
Tmb ≤ 122 ˚C
RMS forward current - 20 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 28 A
Tmb ≤ 120 ˚C
Non-repetitive peak forward t = 10 ms - 150 A
current t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
RWM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1 Tmb ≤ 145˚C for thermal stability.
2 Neglecting switching and reverse current losses.
October 1994 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BYV79 series
ultrafast
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
t
rr
I
rrm
V
fr
Thermal resistance junction to - - 2.0 K/W
mounting base
Thermal resistance junction to in free air - 60 - K/W
ambient
Forward voltage IF = 14 A; Tj = 150˚C - 0.83 0.90 V
IF = 14 A - 0.95 1.05 V
IF = 50 A - 1.20 1.30 V
Reverse current VR = V
VR = V
; Tj = 100 ˚C - 0.5 1.3 mA
RWM
RWM
- 5 50 µA
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 6 15 nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 30 ns
-dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A; VR ≥ 30 V; - 3 4 A
-dIF/dt = 50 A/µs; Tj = 100 ˚C
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 1 - V
October 1994 2 Rev 1.100
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