Philips BYV74W-500, BYV74W-400, BYV74W-300 Datasheet

Philips Semiconductors Product specification

Dual rectifier diodes BYV74W series
ultrafast

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop V

• Fast switching

• Soft recovery characteristic V

• High thermal cycling performance

a1

13

a2

• Low thermal resistance I

k

2

= 300 V/ 400 V/ 500 V

R

≤ 1.12 V

F

= 30 A

O(AV)

trr ≤ 60 ns

GENERAL DESCRIPTION PINNING SOT429 (TO247)

Dual, common cathode, ultra-fast, PIN DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high 1 anode 1
frequency switched mode power
supplies. 2 cathode

The BYV74W series is supplied in 3 anode 2
the conventional leaded SOT429
(TO247) package. tab cathode

2

3

1

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V

I

O(AV)

I

FRM

I

FSM

T
T

RRM
RWM
R

stg
j

Peak repetitive reverse voltage - 300 400 500 V
Crest working reverse voltage - 300 400 500 V
Continuous reverse voltage Tmb ≤ 136˚C - 300 400 500 V

Average rectified output current square wave; δ = 0.5; - 30 A
(both diodes conducting)

1

Tmb ≤ 94 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Tmb ≤ 94 ˚C
Non-repetitive peak forward t = 10 ms - 150 A
current per diode. t = 8.3 ms - 160 A

sinusoidal; with reapplied

V

RRM(max)

Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C

BYV74W -300 -400 -500

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

R

th j-a

1 Neglecting switching and reverse current losses.

April 1998 1 Rev 1.000

Thermal resistance junction to per diode - - 2.4 K/W
heatsink both diodes conducting - - 1.4 K/W
Thermal resistance junction to in free air. - 45 - K/W
ambient

Philips Semiconductors Product specification

Dual rectifier diodes BYV74W series
ultrafast

ELECTRICAL CHARACTERISTICS

characteristics are per diode at Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

I

R

Q

s

t

rr

I

rrm

V

fr

Forward voltage IF = 15 A; Tj = 150˚C - 0.95 1.12 V

IF = 15 A - 1.08 1.25 V

IF = 30 A - 1.15 1.36 V
Reverse current VR = V

Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC

VR = V

RRM

; Tj = 100 ˚C - 0.3 0.8 mA

RRM

-1050µA

dIF/dt = 20 A/µs
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns

dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.2 5.2 A

dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 2.5 - V

I

F(AV)

F(AV)

Tmb(max) / C

D = 1.0

p

t

T

=I

F(RMS)

Tmb(max) / C

a = 1.57

1.9

.

p

t

D =

T

t

F(AV)

x √D.

F(AV)

88

90

102

114

126

138

150

) per

102

114

126

138

150

) per

0.2

IF(AV) / A

4

IF(AV) / A

BYV44

BYV44

2.8

F(RMS)

0.5

2.2

/ I

PF / W

30

Vo = 0.8900 V
Rs = 0.0137 Ohms

25

20

15

10

5

0

0 5 10 15 20 25

0.1

Fig.3. Maximum forward dissipation PF = f(I

diode; square wave where I

PF / W

20

Vo = 0.89
Rs = 0.0137

15

10

5

0

0 5 10 15

Fig.4. Maximum forward dissipation PF = f(I

diode; sinusoidal current waveform where a = form

I

rrm

dI

F

dt

t

rr

time

Q

s

10%

100%

rrm

I

F

I

R

Fig.1. Definition of trr, Qs and I

I

F

time

V

F

V

fr

V

F

time

Fig.2. Definition of V

fr

factor = I

April 1998 2 Rev 1.000