Philips byv72f DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYV72F series
ultrafast
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, high efficiency, SYMBOL PARAMETER MAX. MAX. MAX. UNIT
dual, rectifier diodes in a full pack,
plastic envelope, featuring low BYV72F- 100 150 200
forward voltage drop, ultra-fast V
RRM
recovery times and soft recovery voltage
characteristic. They are intended for V
useinswitchedmode powersupplies I
F
O(AV)
andhighfrequency circuits ingeneral diodes conducting)
where low conduction and switching t
losses are essential.
rr
PINNING - SOT199 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
Repetitive peak reverse 100 150 200 V
Forward voltage 0.90 0.90 0.90 V
Output current (both 20 20 20 A
Reverse recovery time 28 28 28 ns
case
a1
13
a2
3 anode 2 (a)
k
2
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-100 -150 -200
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
I2tI
T
stg
T
j
Repetitive peak reverse voltage - 100 150 200 V
Crest working reverse voltage - 100 150 200 V
Continuous reverse voltage
Output current (both diodes square wave; δ = 0.5; - 20 A
conducting)
2
1
- 100 150 200 V
Ths ≤ 78 ˚C
sinusoidal; a = 1.57; - 20 A
Ths ≤ 78 ˚C
RMS forward current - 20 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Ths ≤ 78 ˚C
Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
2
t for fusing t = 10 ms - 112 A2s
RWM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1 Ths ≤ 125˚C for thermal stability.
2 Neglecting switching and reverse current losses.
October 1994 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BYV72F series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Thermal resistance junction to both diodes conducting
heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 8.0 K/W
per diode
with heatsink compound - - 5.0 K/W
without heatsink compound - - 9.0 K/W
Thermal resistance junction to in free air - 35 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage (per diode) IF = 15 A; Tj = 150˚C - 0.83 0.90 V
IF = 15 A - 0.95 1.05 V
IF = 30 A - 1.00 1.20 V
I
R
Reverse current (per diode) VR = V
VR = V
; Tj = 100 ˚C - 0.5 1 mA
RWM
RWM
- 10 100 µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
t
rr
I
rrm
V
fr
Reverse recovery charge (per IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 15 nC
diode)
Reverse recovery time (per IF = 1 A; VR ≥ 30 V; - 20 28 ns
diode) -dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A; VR ≥ 30 V; - 2 2.4 A
(per diode) -dIF/dt = 50 A/µs; Tj = 100 ˚C
Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs-1-V
diode)
October 1994 2 Rev 1.100
Loading...