Philips byv72ef DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYV72EF series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
• Fast switching
• Soft recovery characteristic V
• Reverse surge capability
a1
13
a2
• High thermal cycling performance I
k
• Isolated mounting tab
2
= 150 V/ 200 V
R
≤ 0.9 V
F
= 20 A
O(AV)
I
= 0.2 A
RRM
trr ≤ 28 ns
GENERAL DESCRIPTION PINNING SOT199
Dual, ultra-fast, epitaxial rectifier PIN DESCRIPTION
diodes intended for use as output
rectifiersinhighfrequencyswitched 1 anode 1 (a)
case
mode power supplies.
2 cathode (k)
The BYV72EF series is supplied in
the conventional leaded SOT199 3 anode 2 (a)
package.
tab isolated
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
T
RRM
RWM
R
stg
j
Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage Ths ≤ 125˚C - 150 200 V
Average rectified output current square wave - 20 A
(both diodes conducting)
1
δ = 0.5; Ths ≤ 78 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Ths ≤ 78 ˚C
Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
BYV72EF -150 -200
1 Neglecting switching and reverse current losses.
July 1998 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BYV72EF series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to both diodes conducting
heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 8.0 K/W
per diode
with heatsink compound - - 5.0 K/W
without heatsink compound - - 9.0 K/W
R
th j-a
Thermal resistance junction to in free air - 35 - K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
Forward voltage IF = 15 A; Tj = 150˚C - 0.83 0.90 V
IF = 15 A - 0.95 1.05 V
IF = 30 A - 1.00 1.20 V
Reverse current VR = V
VR = V
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 15 nC
; Tj = 100 ˚C - 0.5 1 mA
RWM
RWM
- 10 100 µA
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 28 ns
-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
= 0.25 A - 13 22 ns
rec
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
July 1998 2 Rev 1.100
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