Philips BYV42F, BYV42EX DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYV42F, BYV42EX series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
• Fast switching
• Soft recovery characteristic V
• Reverse surge capability
a1
13
a2
• High thermal cycling performance I
k
• Isolated mounting tab
2
= 150 V/ 200 V
R
≤ 0.9 V
F
= 20 A
O(AV)
I
= 0.2 A
RRM
trr ≤ 28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42F series is supplied in the SOT186 package.
The BYV42EX series is supplied in the SOT186A package.
PINNING SOT186 SOT186A
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
case
123
case
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV42F / BYV42EX -150 -200
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
stg
T
j
1 Neglecting switching and reverse current losses.
Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage Ths ≤ 125˚C - 150 200 V
Average rectified output current square wave - 20 A
(both diodes conducting)
1
δ = 0.5; Ths ≤ 78 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Ths ≤ 78 ˚C
Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
October 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV42F, BYV42EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all SOT186A package; f = 50-60 Hz; - 2500 V
three terminals to external sinusoidal waveform; R.H. ≤ 65%;
heatsink clean and dustfree
V
isol
Repetitive peak voltage from all SOT186 package; R.H. ≤ 65%; - 1500 V
three terminals to external clean and dustfree
heatsink
C
isol
Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-hs
th j-a
Thermal resistance junction to both diodes conducting
heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 8.0 K/W
per diode
with heatsink compound - - 5.0 K/W
without heatsink compound - - 9.0 K/W
Thermal resistance junction to in free air - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr1
t
rr2
I
rrm
V
fr
October 1998 2 Rev 1.300
Forward voltage IF = 15 A; Tj = 150˚C - 0.83 0.90 V
IF = 15 A - 0.95 1.05 V
IF = 30 A - 1.00 1.20 V
Reverse current VR = V
VR = V
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 15 nC
; Tj = 100 ˚C - 0.5 1 mA
RWM
RWM
- 10 100 µA
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 28 ns
-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Peak reverse recovery current IF = 10 A; VR ≥ 30 V; - 2 2.4 A
= 0.25 A - 13 22 ns
rec
-dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
Philips Semiconductors Product specification
Rectifier diodes BYV42F, BYV42EX series
ultrafast, rugged
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
F
I
rrm
Fig.1. Definition of t
, Qs and I
rr1
10%
100%
rrm
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
0.5A
IF
0A
I = 0.25A
rec
IR
trr2
I = 1A
R
Fig.4. Definition of t
PF / W
25
Vo = 0.7050 V
Rs = 0.0130 Ohms
20
15
10
5
0
0 5 10 15 20 25
0.1
BYV72
0.2
IF(AV) / A
rr2
Ths(max) / C
D = 1.0
0.5
p
t
I
D =
T
Fig.5. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
p
t
T
t
F(AV)
25
50
75
100
125
150
) per
R
Voltage Pulse Source
Current
shunt
Fig.3. Circuit schematic for t
D.U.T.
to ’scope
rr2
PF / W
20
Vo = 0.705 V
Rs = 0.013 Ohms
15
10
5
0
0 5 10 15
4
IF(AV) / A
BYV72
2.8
2.2
Fig.6. Maximum forward dissipation PF = f(I
Ths(max) / C
a = 1.57
1.9
F(AV)
50
75
100
125
150
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
October 1998 3 Rev 1.300
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