Philips BYV42EX-150, BYV42EX-100 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYV42F, BYV42EX series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
R
= 150 V/ 200 V
• Fast switching
• Soft recovery characteristic V
F
≤ 0.9 V
• Reverse surge capability
• High thermal cycling performance I
O(AV)
= 20 A
• Isolated mounting tab
I
RRM
= 0.2 A
trr ≤ 28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42F series is supplied in the SOT186 package.
The BYV42EX series is supplied in the SOT186A package.
PINNING SOT186 SOT186A
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV42F / BYV42EX -150 -200
V
RRM
Peak repetitive reverse voltage - 150 200 V
V
RWM
Crest working reverse voltage - 150 200 V
V
R
Continuous reverse voltage Ths ≤ 125˚C - 150 200 V
I
O(AV)
Average rectified output current square wave - 20 A
(both diodes conducting)
1
δ = 0.5; Ths ≤ 78 ˚C
I
FRM
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Ths ≤ 78 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
I
RSM
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
k
a1
a2
13
2
123
case
123
case
1 Neglecting switching and reverse current losses.
October 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV42F, BYV42EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all SOT186A package; f = 50-60 Hz; - 2500 V
three terminals to external sinusoidal waveform; R.H. ≤ 65%;
heatsink clean and dustfree
V
isol
Repetitive peak voltage from all SOT186 package; R.H. ≤ 65%; - 1500 V
three terminals to external clean and dustfree
heatsink
C
isol
Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to both diodes conducting
heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 8.0 K/W
per diode
with heatsink compound - - 5.0 K/W
without heatsink compound - - 9.0 K/W
R
th j-a
Thermal resistance junction to in free air - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage IF = 15 A; Tj = 150˚C - 0.83 0.90 V
IF = 15 A - 0.95 1.05 V
IF = 30 A - 1.00 1.20 V
I
R
Reverse current VR = V
RWM
; Tj = 100 ˚C - 0.5 1 mA
VR = V
RWM
- 10 100 µA
Q
s
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 15 nC
t
rr1
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 28 ns
-dIF/dt = 100 A/µs
t
rr2
Reverse recovery time IF = 0.5 A to IR = 1 A; I
rec
= 0.25 A - 13 22 ns
I
rrm
Peak reverse recovery current IF = 10 A; VR ≥ 30 V; - 2 2.4 A
-dIF/dt = 50 A/µs; Tj = 100˚C
V
fr
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV42F, BYV42EX series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Qs and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation PF = f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
Fig.6. Maximum forward dissipation PF = f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
time
time
V
F
V
fr
V
F
I
F
0 5 10 15 20 25
0
5
10
15
20
25
D = 1.0
0.5
0.2
0.1
BYV72
Rs = 0.0130 Ohms
Vo = 0.7050 V
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
125
100
75
50
25
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
0 5 10 15
0
5
10
15
20
1.9
2.2
2.8
4
BYV72
IF(AV) / A
PF / W
Ths(max) / C
150
125
100
75
50
a = 1.57
Vo = 0.705 V
Rs = 0.013 Ohms
October 1998 3 Rev 1.300
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