Philips BYV42EB-200, BYV42E-200, BYV42E-150 Datasheet

Philips Semiconductors Product specification

Rectifier diodes

BYV42E, BYV42EB series

ultrafast, rugged

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

VR = 150 V/ 200 V

• Fast switching

VF ≤ 0.85 V

• Soft recovery characteristic

a1

a2

• Reverse surge capability

1

3

• High thermal cycling performance

IO(AV) = 30 A

• Low thermal resistance

IRRM = 0.2 A

k

2

trr ≤ 28 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.

The BYV42E series is supplied in the SOT78 conventional leaded package.

The BYV42EB series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

PIN DESCRIPTION

tab

1anode 1 (a)

2cathode (k) 1

3anode 2 (a)

tab	cathode (k)	1 2 3

	tab
	2
1	3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.			UNIT
			BYV42E / BYV42EB		-150		-200
VRRM	Peak repetitive reverse voltage			-	150		200	V
VRWM	Crest working reverse voltage	Tmb ≤ 144˚C		-	150		200	V
VR	Continuous reverse voltage			-	150		200	V
IO(AV)	Average rectified output current	square wave		-	30			A
	(both diodes conducting)	δ = 0.5; Tmb ≤ 108 ˚C
IFRM	Repetitive peak forward current	t = 25	μs; δ = 0.5;	-	30			A
IFSM	per diode	Tmb ≤	108 ˚C
	Non-repetitive peak forward	t = 10 ms		-	150			A
	current per diode	t = 8.3 ms		-	160			A
		sinusoidal; with reapplied
		VRWM(max)
IRRM	Repetitive peak reverse current	tp = 2	μs; δ = 0.001	-	0.2			A
	per diode	tp = 100 μs
IRSM	Non-repetitive peak reverse			-	0.2			A
	current per diode
Tstg	Storage temperature			-40	150			˚C
Tj	Operating junction temperature			-	150			˚C

1.It is not possible to make connection to pin 2 of the SOT404 package

2.SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting tab.

July 1998

1

Rev 1.200

Philips Semiconductors Product specification

Rectifier diodes			BYV42E, BYV42EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL	PARAMETER	CONDITIONS		MIN.				MAX.		UNIT
VC	Electrostatic discharge	Human body model;		-				8		kV
	capacitor voltage	C = 250 pF; R = 1.5 kW
THERMAL RESISTANCES
SYMBOL	PARAMETER	CONDITIONS		MIN.		TYP.			MAX.	UNIT
Rth j-mb	Thermal resistance junction to	per diode		-		-			2.4	K/W
	mounting base	both diodes		-		-			1.4	K/W
Rth j-a	Thermal resistance junction to	SOT78 package, in free air		-		60			-	K/W
	ambient	SOT404 and SOT428 packages,		-		50			-	K/W
		pcb mounted, minimum footprint,
		FR4 board
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS		MIN.		TYP.			MAX.	UNIT
VF	Forward voltage	IF = 15 A; Tj = 150˚C		-		0.78			0.85	V
		IF = 15 A		-		0.95			1.05	V
IR		IF = 30 A		-		1.00			1.20	V
	Reverse current	VR = VRWM; Tj = 100 ˚C		-		0.5			1	mA
Qs	Reverse recovery charge	VR = VRWM	³ 30 V; -dIF/dt = 20 A/ms	-		10			100	mA
		IF = 2 A; VR		-		6			15	nC
trr1	Reverse recovery time	IF = 1 A; VR	³ 30 V;	-		20			28	ns
trr2		-dIF/dt = 100 A/ms
	Reverse recovery time	IF = 0.5 A to IR = 1 A; Irec = 0.25 A		-		13			22	ns
Vfr	Forward recovery voltage	IF = 1 A; dIF/dt = 10 A/ms		-		1			-	V

July 1998

2

Rev 1.200

Philips Semiconductors	Product specification
Rectifier diodes	BYV42E, BYV42EB series
ultrafast, rugged

I	dI
	F
F	dt
		t
		rr
		time
	Q s	10%	100%
I	I
R
	rrm
	Fig.1. Definition of trr1, Qs and Irrm
I F
		time
V F
			V fr
		V F
		time
	Fig.2. Definition of Vfr
		R
		D.U.T.

Voltage Pulse Source

Current

shunt

to 'scope

Fig.3. Circuit schematic for trr2

0.5A
IF
0A
I	rec	= 0.25A
IR
		trr2
		I = 1A
		R
		Fig.4. Definition of trr2

PF / W		BYV42			Tmb(max) / C
20	Vo = 0.705 V						102
					D = 1.0
	Rs = 0.0097 Ohms
15			0.5				114
		0.2
10		0.1					126
5			I	tp	D =	tp	138
						T
					T	t
0	5	10	15		20		150
0							25
		IF(AV) / A

Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where

IF(AV) =IF(RMS) x ÖD.

15	PF / W		BYV42	Tmb(max) / C
				114
	Vo = 0.705 V			a = 1.57
	Rs = 0.0097 Ohms
				1.9
			2.2
10			2.8	126
			4
5				138
0	0	5	10	150
				15
			IF(AV) / A

Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).

July 1998

3

Rev 1.200