Philips BYV42EB-200, BYV42E-200, BYV42E-150 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.85 V
• Reverse surge capability
a1
13
• High thermal cycling performance I
• Low thermal resistance
k
2
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package.
The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
a2
= 30 A
O(AV)
I
= 0.2 A
RRM
trr ≤ 28 ns
PIN DESCRIPTION
tab
tab
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode (k)
1
2
123
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
O(AV)
I
FRM
I
FSM
RRM
RWM
R
Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage Tmb ≤ 144˚C - 150 200 V
Average rectified output current square wave - 30 A
(both diodes conducting) δ = 0.5; Tmb ≤ 108 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Tmb ≤ 108 ˚C
Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
I
RRM
I
RSM
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
T
stg
T
j
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting
tab.
BYV42E / BYV42EB -150 -200
RWM(max)
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes - - 1.4 K/W
Thermal resistance junction to SOT78 package, in free air - 60 - K/W
ambient SOT404 and SOT428 packages, - 50 - K/W
pcb mounted, minimum footprint,
FR4 board
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
Forward voltage IF = 15 A; Tj = 150˚C - 0.78 0.85 V
IF = 15 A - 0.95 1.05 V
IF = 30 A - 1.00 1.20 V
Reverse current VR = V
VR = V
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 6 15 nC
; Tj = 100 ˚C - 0.5 1 mA
RWM
RWM
- 10 100 µA
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 28 ns
-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
= 0.25 A - 13 22 ns
rec
July 1998 2 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
F
I
rrm
Fig.1. Definition of t
, Qs and I
rr1
10%
100%
rrm
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
0.5A
IF
0A
I = 0.25A
rec
IR
trr2
I = 1A
R
Fig.4. Definition of t
PF / W
20
Vo = 0.705 V
Rs = 0.0097 Ohms
15
10
5
0
0 5 10 15 20 25
0.1
BYV42
0.2
IF(AV) / A
rr2
Tmb(max) / C
D = 1.0
0.5
t
p
I
D =
T
Fig.5. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
t
T
p
t
F(AV)
102
114
126
138
150
) per
R
Voltage Pulse Source
Current
shunt
Fig.3. Circuit schematic for t
D.U.T.
to ’scope
rr2
PF / W
15
Vo = 0.705 V
Rs = 0.0097 Ohms
10
5
0
0 5 10 15
BYV42
2.2
2.8
4
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(I
Tmb(max) / C
a = 1.57
1.9
F(AV)
114
126
138
150
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
July 1998 3 Rev 1.200
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