Philips BYV42E-100 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rugged dual rectifier diodes in a
plastic envelope, featuring low BYV42E- 100 150 200
forward voltage drop, ultra-fast V
RRM
recovery times and soft recovery voltage
characteristic. These devices can V
withstand reverse voltage transients I
F
O(AV)
and have guaranteed reverse surge diodes conducting)
and ESD capability. They are t
intended for use in switched mode I
rr
RRM
power supplies and high frequency current per diode
circuits in general where low
conduction and switching losses are
essential.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Repetitive peak reverse 100 150 200 V
Forward voltage 0.85 0.85 0.85 V
Output current (both 30 30 30 A
Reverse recovery time 28 28 28 ns
Repetitive peak reverse 0.2 0.2 0.2 A
PIN DESCRIPTION
1 anode 1 (a)
tab
a1
a2
2 cathode (k)
3 anode 2 (a)
tab cathode (k)
1 2 3
k
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-100 -150 -200
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
I2t I2t for fusing t = 10 ms - 112 A2s
I
RRM
I
RSM
T
stg
T
j
1 Tmb ≤ 144˚C for thermal stability.
2 Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
Repetitive peak reverse voltage - 100 150 200 V
Crest working reverse voltage - 100 150 200 V
Continuous reverse voltage
Output current (both diodes square wave - 30 A
conducting)
2
1
δ = 0.5; Tmb ≤ 108 ˚C
- 100 150 200 V
sinusoidal - 27 A
a = 1.57; Tmb ≤ 111 ˚C
RMS forward current - 43 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Tmb ≤ 108 ˚C
Non-repetitive peak forward t = 10 ms - 150 A
current per diode t = 8.3 ms - 160 A
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
October 1994 1 Rev 1.100
Philips Semiconductors Product specification
Rectifier diodes BYV42E series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes conducting - - 1.4 K/W
R
th j-a
Thermal resistance junction to in free air - 60 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage (per diode) IF = 15 A; Tj = 150˚C - 0.78 0.85 V
IF = 15 A - 0.95 1.05 V
IF = 30 A - 1.00 1.20 V
I
R
Reverse current (per diode) VR = V
VR = V
; Tj = 100 ˚C - 0.5 1 mA
RWM
RWM
- 10 100 µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
t
rr1
t
rr2
V
fr
Reverse recovery charge (per IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 6 15 nC
diode)
Reverse recovery time (per IF = 1 A; VR ≥ 30 V; - 20 28 ns
diode) -dIF/dt = 100 A/µs
Reverse recovery time (per IF = 0.5 A to IR = 1 A; I
diode)
= 0.25 A - 13 22 ns
rec
Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs - 1 - V
diode)
October 1994 2 Rev 1.100
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