Philips BYV40E-200, BYV40E-150 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYV40E series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
• Fast switching
• Soft recovery characteristic V
• Reverse surge capability
a1
13
a2
• High thermal cycling performance I
k
• low profile surface mounting
2
package I
= 150 V/ 200 V
R
≤ 0.7 V
F
= 1.5 A
O(AV)
= 0.1 A
RRM
trr ≤ 25 ns
GENERAL DESCRIPTION PINNING SOT223
Dual, common cathode, ultra-fast, PIN DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high 1 anode 1
frequency switched mode power
supplies. 2 cathode
The BYV40E series is supplied in 3 anode 2
the SOT223 surface mounting
package. tab cathode
1
4
23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
T
RRM
RWM
R
stg
j
Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage Tsp ≤ 120˚C - 150 200 V
Average rectified output current square wave; δ = 0.5; - 1.5 A
(both diodes conducting)
1
Tsp ≤ 132˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 1.5 A
per diode Tsp ≤ 132 ˚C
Non-repetitive peak forward tp = 10 ms - 6 A
current per diode tp = 8.3 ms - 6.6 A
sinusoidal; Tj = 150˚C prior
to surge; with reapplied
V
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.1 A
RWM(max)
per diode
Non-repetitive peak reverse tp = 100 µs - 0.1 A
current per diode
Storage temperature -65 150 ˚C
Operating junction temperature - 150 ˚C
BYV40E -150 -200
1 Neglecting switching and reverse current losses
September 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV40E series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
Thermal resistance one or both diodes conducting - - 15 K/W
junction to solder point
R
th j-a
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:11 - 70 - K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
Forward voltage IF = 0.5 A; Tj = 150˚C - 0.50 0.7 V
IF = 1.5 A - 0.82 1.0 V
Reverse current VR = V
VR = V
; Tj = 100 ˚C - 100 300 µA
RWM
RWM
-510µA
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- - 11 nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; - - 25 ns
-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Forward recovery voltage IF = 2 A; dIF/dt = 20 A/µs-3-V
= 0.25 A - 10 20 ns
rec
September 1998 2 Rev 1.300
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