Philips BYV26E, BYV26D, BYV26G, BYV26B Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
File under Discrete Semiconductors, SC01
1996 May 30
Philips Semiconductors Product specification
Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYV26A − 200 V
BYV26B − 400 V
BYV26C − 600 V
BYV26D − 800 V
BYV26E − 1000 V
BYV26F − 1200 V
BYV26G − 1400 V
V
R
continuous reverse voltage
BYV26A − 200 V
BYV26B − 400 V
BYV26C − 600 V
BYV26D − 800 V
BYV26E − 1000 V
BYV26F − 1200 V
BYV26G − 1400 V
I
F(AV)
I
F(AV)
I
FRM
average forward current Ttp=85°C; lead length = 10 mm;
BYV26A to E − 1.00 A
BYV26F and G − 1.05 A
average forward current T
BYV26A to E − 0.65 A
BYV26F and G − 0.68 A
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
=60°C; PCB mounting (see
amb
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
repetitive peak forward current Ttp=85°C; see Figs 6 and 7
BYV26A to E − 10.0 A
BYV26F and G − 9.6 A
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
MAM047
1996 May 30 2
Philips Semiconductors Product specification
Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
(BR)R
I
R
t
rr
C
d
repetitive peak forward current T
=60°C; see Figs 8 and 9
amb
BYV26A to E − 6.0 A
BYV26F and G − 6.4 A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
non-repetitive peak reverse
avalanche energy
prior to surge; VR=V
IR= 400 mA; Tj=T
surge; inductive load switched off
RRMmax
j max
prior to
j max
− 30 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature see Figs 12 and 13 −65 +175 °C
forward voltage IF= 1 A; Tj=T
BYV26A to E −−1.3 V
see Figs 14 and 15
j max
;
BYV26F and G −−1.3 V
forward voltage IF=1A;
BYV26A to E −−2.50 V
see Figs 14 and 15
BYV26F and G −−2.15 V
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYV26A 300 −−V
BYV26B 500 −−V
BYV26C 700 −−V
BYV26D 900 −−V
BYV26E 1100 −−V
BYV26F 1300 −−V
BYV26G 1500 −−V
reverse current VR=V
V
R=VRRMmax
; see Fig.16 −− 5µA
RRMmax
;
−−150 µA
Tj= 165 °C; see Fig.16
reverse recovery time when switched from
BYV26A to C −−30 ns
BYV26D and E −−75 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.20
BYV26F and G −−150 ns
diode capacitance f = 1 MHz; VR=0V;
BYV26A to C − 45 − pF
see Figs 17 and 18
BYV26D and E − 40 − pF
BYV26F and G − 35 − pF
1996 May 30 3
Philips Semiconductors Product specification
Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the
maximum slope of reverse recovery
current
BYV26A to C −− 7A/µs
BYV26D and E −− 6A/µs
BYV26F and G −− 5A/µs
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
when switched from
I
= 1 A to VR≥ 30 V and
F
dIF/dt = −1A/µs;
see Fig.21
‘General Part of Handbook SC01’
.
1996 May 30 4
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