DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
File under Discrete Semiconductors, SC01
1996 May 30
Philips Semiconductors Product specification
Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYV26A − 200 V
BYV26B − 400 V
BYV26C − 600 V
BYV26D − 800 V
BYV26E − 1000 V
BYV26F − 1200 V
BYV26G − 1400 V
V
R
continuous reverse voltage
BYV26A − 200 V
BYV26B − 400 V
BYV26C − 600 V
BYV26D − 800 V
BYV26E − 1000 V
BYV26F − 1200 V
BYV26G − 1400 V
I
F(AV)
I
F(AV)
I
FRM
average forward current Ttp=85°C; lead length = 10 mm;
BYV26A to E − 1.00 A
BYV26F and G − 1.05 A
average forward current T
BYV26A to E − 0.65 A
BYV26F and G − 0.68 A
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
=60°C; PCB mounting (see
amb
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
repetitive peak forward current Ttp=85°C; see Figs 6 and 7
BYV26A to E − 10.0 A
BYV26F and G − 9.6 A
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
MAM047
1996 May 30 2
Philips Semiconductors Product specification
Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
FRM
I
FSM
E
RSM
T
stg
T
j
ELECTRICAL CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
F
V
(BR)R
I
R
t
rr
C
d
repetitive peak forward current T
=60°C; see Figs 8 and 9
amb
BYV26A to E − 6.0 A
BYV26F and G − 6.4 A
non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
non-repetitive peak reverse
avalanche energy
prior to surge; VR=V
IR= 400 mA; Tj=T
surge; inductive load switched off
RRMmax
j max
prior to
j max
− 30 A
− 10 mJ
storage temperature −65 +175 °C
junction temperature see Figs 12 and 13 −65 +175 °C
forward voltage IF= 1 A; Tj=T
BYV26A to E −−1.3 V
see Figs 14 and 15
j max
;
BYV26F and G −−1.3 V
forward voltage IF=1A;
BYV26A to E −−2.50 V
see Figs 14 and 15
BYV26F and G −−2.15 V
reverse avalanche breakdown
IR= 0.1 mA
voltage
BYV26A 300 −−V
BYV26B 500 −−V
BYV26C 700 −−V
BYV26D 900 −−V
BYV26E 1100 −−V
BYV26F 1300 −−V
BYV26G 1500 −−V
reverse current VR=V
V
R=VRRMmax
; see Fig.16 −− 5µA
RRMmax
;
−−150 µA
Tj= 165 °C; see Fig.16
reverse recovery time when switched from
BYV26A to C −−30 ns
BYV26D and E −−75 ns
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.20
BYV26F and G −−150 ns
diode capacitance f = 1 MHz; VR=0V;
BYV26A to C − 45 − pF
see Figs 17 and 18
BYV26D and E − 40 − pF
BYV26F and G − 35 − pF
1996 May 30 3
Philips Semiconductors Product specification
Fast soft-recovery
BYV26 series
controlled avalanche rectifiers
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
-------dt
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the
maximum slope of reverse recovery
current
BYV26A to C −− 7A/µs
BYV26D and E −− 6A/µs
BYV26F and G −− 5A/µs
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
when switched from
I
= 1 A to VR≥ 30 V and
F
dIF/dt = −1A/µs;
see Fig.21
‘General Part of Handbook SC01’
.
1996 May 30 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
handbook, halfpage
1
I
F(AV)
(A)
0.5
0
0 200
BYV26A toE
a =1.42; VR=V
Switched mode application.
20 15 10 lead length (mm)
100
; δ= 0.5.
RRMmax
o
Ttp( C)
MSA855
handbook, halfpage
2
I
F(AV)
(A)
1
0
0 200
BYV26F andG
a =1.42; VR=V
Switched mode application.
RRMmax
; δ= 0.5.
BYV26 series
lead length 10 mm
100
Ttp( C)
MLB533
o
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
1
I
F(AV)
(A)
0.5
0
0 200
BYV26A toE
a =1.42; VR=V
Device mounted as shown in Fig.19.
Switched mode application.
RRMmax
; δ= 0.5.
100
o
T ( C)
amb
MSA856
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
1
I
F(AV)
(A)
0.5
0
0 200
BYV26F andG
a =1.42; VR=V
Device mounted as shown in Fig.19.
Switched mode application.
RRMmax
; δ= 0.5.
100
o
T ( C)
amb
MLB534
Fig.4 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 May 30 5
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
12
I
FRM
(A)
10
δ
8
6
4
2
0
2
10
1
10
0.1
0.2
0.5
11010
= 0.05
1
2103
BYV26 series
MSA860
4
t (ms)
p
10
BYV26A toE.
Ttp=85°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 46 K/W.
j max
at V
RRM
= 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
10
I
FRM
(A)
8
6
4
2
= 0.05
δ
0.1
0.2
0.5
1
MLB535
0
2
10
BYV26F and G.
Ttp=85°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 46 K/W.
10
1
11010
at V
RRM
= 1400 V.
j max
2103
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 30 6
t (ms)
p
4
10
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
6
I
FRM
(A)
5
4
0.1
3
0.2
2
0.5
1
0
2
10
BYV26A to E
T
=60°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 100 K/W.
1
10
11010
at V
j max
= 0.05δ
1
RRM
= 1000 V.
2103
BYV26 series
MSA859
4
t (ms)
p
10
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
8
I
FRM
(A)
6
4
2
0
2
10
BYV26F and G
T
=60°C; R
amb
V
RRMmax
th j-a
during 1 −δ; curves include derating for T
10
= 100 K/W.
1
= 0.05
δ
0.1
0.2
0.5
1
11010
at V
RRM
= 1400 V.
j max
2103
t (ms)
p
MLB536
4
10
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 30 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
F(AV)
MSA854
2 1.57
1.42
(A)
3
P
(W)
2
1
0
01
BYV26A to E
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
0.5
; δ = 0.5.
a = 3 2.5
I
BYV26 series
F(AV)
MLB532
1.57
1.42
(A)
3
P
(W)
0.5
a = 3 2.5 2
I
2
1
0
01
BYV26F and G
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
V (V)
R
MSA857
200
handbook, halfpage
T
j
o
( C)
100
0
0 400 1200
ABCDE
800
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
V (V)
R
MLB599
200
handbook, halfpage
T
j
o
( C)
100
0
0 2000
FG
1000
BYV26A to E
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 30 8
BYV26F and G
Solid line = VR.
Dotted line = V
RRM
; δ = 0.5.
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
handbook, halfpage
8
I
F
(A)
6
4
2
0
024 8
BYV26A to E
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
6
VF (V)
MSA853
handbook, halfpage
8
I
F
(A)
6
4
2
0
02 6
BYV26F and G
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
BYV26 series
MBD427
4
VF (V)
Fig.14 Forward current as a function of forward
voltage; maximum values.
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
0 100 200
VR=V
RRMmax
.
Tj (°C)
MGC550
Fig.15 Forward current as a function of forward
voltage; maximum values.
2
10
handbook, halfpage
C
d
(pF)
BYV26A,B,C
10
BYV26D,E
1
1
BYV26A to E
f = 1 MHz; Tj=25°C.
10 10
2
V (V)
R
MSA858
3
10
Fig.16 Reverse current as a function of junction
temperature; maximum values.
1996 May 30 9
Fig.17 Diode capacitance as a function of reverse
voltage, typical values.
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
2
10
handbook, halfpage
C
d
(pF)
10
1
1
10 10
2
3
10
V (V)
MBD437
R
BYV26 series
handbook, halfpage
4
10
50
25
7
50
2
3
MGA200
BYV26F and G
f = 1 MHz; Tj=25°C.
Fig.18 Diode capacitance as a function of reverse
voltage, typical values. Fig.19 Device mounted on a printed-circuit board.
handbook, full pagewidth
10 Ω
25 V
DUT
+
1 Ω
50 Ω
I
(A)
0.25
R
I
(A)
0.5
0.5
F
0
1
Dimensions in mm.
t
rr
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
Fig.20 Test circuit and reverse recovery time waveform and definition.
1996 May 30 10
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
I
dbook, halfpage
F
dI
F
dt
t
rr
dI
R
dt
I
R
10%
100%
BYV26 series
t
MGC499
Fig.21 Reverse recovery definitions.
1996 May 30 11
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
3.81
max
Dimensions in mm.
The marking band indicates the cathode.
BYV26 series
ka
4.57
max
28 min28 min
Fig.22 SOD57.
0.81
max
MBC880
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 30 12
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