Philips Semiconductors Product specification
Rectifier diodes |
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BYR29F series |
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ultrafast |
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FEATURES |
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SYMBOL |
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QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 500 V/ 600 V/ 700 V / |
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• Fast switching |
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k |
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a |
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800 V |
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• Soft recovery characteristic |
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VF ≤ 1.5 V |
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• Reverse surge capability |
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1 |
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2 |
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• High thermal cycling performance |
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IF(AV) = 8 A |
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• Isolated mounting tab |
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trr ≤ 75 ns |
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GENERAL DESCRIPTION |
PINNING |
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SOD100 |
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Ultra-fast, epitaxial rectifier diodes |
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PIN |
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DESCRIPTION |
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intended for use as output rectifiers |
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case |
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in high frequency switched mode |
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cathode |
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power supplies. |
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anode |
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The BYR29F series is supplied in |
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the conventional leaded SOD100 |
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tab |
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isolated |
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package. |
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1 |
2 |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
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UNIT |
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BYR29F |
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-500 |
-600 |
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-700 |
-800 |
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VRRM |
Peak repetitive reverse voltage |
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- |
500 |
600 |
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700 |
800 |
V |
VRWM |
Crest working reverse voltage |
Ths ≤ 136 ˚C |
- |
500 |
600 |
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700 |
800 |
V |
VR |
Continuous reverse voltage |
- |
500 |
600 |
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700 |
800 |
V |
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I |
Average forward current1 |
square wave; |
- |
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8 |
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A |
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F(AV) |
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δ = 0.5; |
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IFRM |
Repetitive peak forward current |
Ths ≤ 73 ˚C |
- |
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16 |
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A |
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t = 25 μs; δ = 0.5; |
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Ths ≤ 73 ˚C |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
- |
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60 |
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A |
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current |
t = 8.3 ms |
- |
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66 |
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A |
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sinusoidal; with |
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Tstg |
Storage temperature |
reapplied VRRM(max) |
-40 |
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150 |
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˚C |
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Tj |
Operating junction temperature |
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150 |
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˚C |
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1 Neglecting switching and reverse current losses
September 1998 |
1 |
Rev 1.400 |
Philips Semiconductors Product specification
Rectifier diodes |
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BYR29F series |
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ultrafast |
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ISOLATION LIMITING VALUE & CHARACTERISTIC |
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Ths = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
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TYP. |
MAX. |
UNIT |
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Visol |
Repetitive peak voltage from |
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R.H. £ 65% ; clean and dustfree |
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- |
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1500 |
V |
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both terminals to external |
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heatsink |
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Cisol |
Capacitance from cathode to |
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f = 1 MHz |
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12 |
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pF |
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external heatsink |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-hs |
Thermal resistance junction to |
with heatsink compound |
- |
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5.5 |
K/W |
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heatsink |
without heatsink compound |
- |
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7.2 |
K/W |
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Rth j-a |
Thermal resistance junction to |
in free air. |
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- |
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55 |
- |
K/W |
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ambient |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 8 A; Tj = 150˚C |
- |
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1.07 |
1.50 |
V |
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IF = 20 A |
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1.75 |
1.95 |
V |
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IR |
Reverse current |
VR = VRRM |
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1.0 |
10 |
mA |
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Qs |
Reverse recovery charge |
VR = VRRM; Tj |
= 100 ˚C |
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0.1 |
0.2 |
mA |
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IF = 2 A to VR |
³ 30 V; |
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150 |
200 |
nC |
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dIF/dt = 20 A/ms |
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trr |
Reverse recovery time |
IF = 1 A to VR |
³ 30 V; |
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60 |
75 |
ns |
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dIF/dt = 100 A/ms |
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Irrm |
Peak reverse recovery current |
IF = 10 A to VR ³ 30 V; |
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6 |
A |
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dIF/dt = 50 A/ms; Tj = 100 ˚C |
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Vfr |
Forward recovery voltage |
IF = 10 A; dIF/dt = 10 A/ms |
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5.0 |
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V |
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September 1998 |
2 |
Rev 1.400 |
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