Philips byr29f DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYR29F series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
= 500 V/ 600 V/ 700 V /
R
• Fast switching 800 V
• Soft recovery characteristic
• Reverse surge capability V
k a
12
≤ 1.5 V
F
• High thermal cycling performance
• Isolated mounting tab I
F(AV)
= 8 A
trr ≤ 75 ns
GENERAL DESCRIPTION PINNING SOD100
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
in high frequency switched mode 1 cathode
case
power supplies.
2 anode
The BYR29F series is supplied in
the conventional leaded SOD100 tab isolated
package.
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
F(AV)
I
FRM
I
FSM
T
T
RRM
RWM
R
stg
j
Peak repetitive reverse voltage - 500 600 700 800 V
Crest working reverse voltage - 500 600 700 800 V
Continuous reverse voltage Ths ≤ 136 ˚C - 500 600 700 800 V
Average forward current
1
square wave; - 8 A
δ = 0.5;
Ths ≤ 73 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
Ths ≤ 73 ˚C
Non-repetitive peak forward t = 10 ms - 60 A
current t = 8.3 ms - 66 A
sinusoidal; with
reapplied V
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
BYR29F -500 -600 -700 -800
RRM(max)
1 Neglecting switching and reverse current losses
September 1998 1 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes BYR29F series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
Repetitive peak voltage from R.H. ≤ 65% ; clean and dustfree - 1500 V
both terminals to external
heatsink
Capacitance from cathode to f = 1 MHz - 12 - pF
external heatsink
Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
Thermal resistance junction to in free air. - 55 - K/W
ambient
Forward voltage IF = 8 A; Tj = 150˚C - 1.07 1.50 V
IF = 20 A - 1.75 1.95 V
Reverse current VR = V
Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 150 200 nC
VR = V
RRM
; Tj = 100 ˚C - 0.1 0.2 mA
RRM
- 1.0 10 µA
dIF/dt = 20 A/µs
Reverse recovery time IF = 1 A to VR ≥ 30 V; - 60 75 ns
dIF/dt = 100 A/µs
Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - - 6 A
dIF/dt = 50 A/µs; Tj = 100 ˚C
Forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs - 5.0 - V
September 1998 2 Rev 1.400
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