Philips Semiconductors Product specification
Rectifier diodes |
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BYR29 series |
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ultrafast |
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FEATURES |
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SYMBOL |
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QUICK REFERENCE DATA |
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• Low forward volt drop |
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VR = 500 V/ 600 V/ 700 V / |
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• Fast switching |
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k |
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a |
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800 V |
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• Soft recovery characteristic |
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VF ≤ 1.5 V |
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• Reverse surge capability |
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1 |
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2 |
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• High thermal cycling performance |
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IF(AV) = 8 A |
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• Low thermal resistance |
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trr ≤ 75 ns |
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GENERAL DESCRIPTION |
PINNING |
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SOD59 (TO220AC) |
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Ultra-fast, epitaxial rectifier diodes |
PIN |
DESCRIPTION |
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intended for use as output rectifiers |
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in high frequency switched mode |
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cathode |
power supplies. |
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anode |
The BYR29 series is supplied in the |
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conventional leaded SOD59 |
tab |
cathode |
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(TO220AC) package. |
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tab
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
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UNIT |
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BYR29 |
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-500 |
-600 |
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-700 |
-800 |
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VRRM |
Peak repetitive reverse voltage |
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500 |
600 |
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700 |
800 |
V |
VRWM |
Crest working reverse voltage |
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500 |
600 |
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700 |
800 |
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VR |
Continuous reverse voltage |
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500 |
600 |
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700 |
800 |
V |
I |
Average forward current1 |
square wave; |
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8 |
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A |
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F(AV) |
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δ = 0.5; |
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IFRM |
Repetitive peak forward current |
Tmb ≤ |
115 ˚C |
- |
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16 |
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A |
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t = 25 |
μs; δ = 0.5; |
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Tmb ≤ |
115 ˚C |
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IFSM |
Non-repetitive peak forward |
t = 10 ms |
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60 |
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A |
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current |
t = 8.3 ms |
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66 |
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A |
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sinusoidal; with |
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Tstg |
Storage temperature |
reapplied VRRM(max) |
-40 |
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150 |
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˚C |
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Tj |
Operating junction temperature |
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150 |
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˚C |
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction to |
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2.5 |
K/W |
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mounting base |
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Rth j-a |
Thermal resistance junction to |
in free air. |
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60 |
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K/W |
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ambient |
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1 Neglecting switching and reverse current losses
September 1998 |
1 |
Rev 1.300 |
Philips Semiconductors Product specification
Rectifier diodes |
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BYR29 series |
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ultrafast |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 8 A; Tj = 150˚C |
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1.07 |
1.50 |
V |
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IF = 20 A |
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1.75 |
1.95 |
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IR |
Reverse current |
VR = VRRM |
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1.0 |
10 |
mA |
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Qs |
Reverse recovery charge |
VR = VRRM; Tj |
= 100 ˚C |
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0.1 |
0.2 |
mA |
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IF = 2 A to VR |
³ 30 V; |
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150 |
200 |
nC |
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dIF/dt = 20 A/ms |
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trr |
Reverse recovery time |
IF = 1 A to VR |
³ 30 V; |
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60 |
75 |
ns |
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dIF/dt = 100 A/ms |
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Irrm |
Peak reverse recovery current |
IF = 10 A to VR ³ 30 V; |
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A |
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dIF/dt = 50 A/ms; Tj = 100 ˚C |
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Vfr |
Forward recovery voltage |
IF = 10 A; dIF/dt = 10 A/ms |
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5.0 |
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V |
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I |
dI |
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F |
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F |
dt |
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t |
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rr |
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time |
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Q s |
10% |
100% |
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R |
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rrm |
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Fig.1. Definition of trr, Qs and Irrm
I F
time
V F
V fr
V F
time
Fig.2. Definition of Vfr
20 |
PF / W |
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BYR29 |
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Tmb(max) / C100 |
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Vo = 1.26 V |
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D = 1.0 |
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Rs = 0.03 Ohms |
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15 |
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0.5 |
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112.5 |
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10 |
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0.2 |
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125 |
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0.1 |
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I |
tp |
D = |
tp |
137.5 |
5 |
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T |
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T |
t |
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0 |
0 |
2 |
4 |
6 |
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8 |
10 |
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150 |
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12 |
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IF(AV) / A |
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Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x ÖD.
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PF / W |
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BYR29 |
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Tmb(max) / C |
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Vo = 1.26 V |
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Rs = 0.03 Ohms |
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a = 1.57 |
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2.2 |
1.9 |
120 |
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10 |
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2.8 |
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4 |
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130 |
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5 |
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140 |
0 |
0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
150 |
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IF(AV) / A |
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Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
September 1998 |
2 |
Rev 1.300 |