Philips BYQ40EW-150, BYQ40EW-200 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYQ40EW series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.85 V
• Reverse surge capability
a1
13
• High thermal cycling performance I
• Low thermal resistance
k
2
GENERAL DESCRIPTION PINNING SOT429 (TO247)
Dual, common cathode, ultra-fast, PIN DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high 1 anode 1
frequency switched mode power
supplies. 2 cathode
TheBYQ40EWseriesissuppliedin 3 anode 2
the conventional leaded SOT429
(TO247) package. tab cathode
a2
= 40 A
O(AV)
I
≤ 0.2 A
RRM
trr ≤ 30 ns
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ40EW -150 -200
V
V
V
I
O(AV)
I
FRM
RRM
RWM
R
Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage - 150 200 V
Average rectified output current square wave - 40 A
(both diodes conducting) δ = 0.5; Tmb ≤ 110 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 40 A
per diode Tmb ≤ 110 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 300 A
current per diode t = 8.3 ms - 325 A
sinusoidal; with reapplied
V
I
RRM
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
RWM(max)
per diode
I
RSM
T
T
stg
j
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
December 1998 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diodes BYQ40EW series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr
V
fr
Thermal resistance junction to per diode - - 1.05 K/W
mounting base both diodes conducting - - 0.75 K/W
Thermal resistance junction to in free air - 45 - K/W
ambient
Forward voltage IF = 20 A; Tj = 150˚C - 0.8 0.85 V
IF = 20 A - 0.97 1.05 V
IF = 40 A - 1.06 1.20 V
Reverse current VR = V
VR = V
RWM
; Tj = 100 ˚C - 0.7 1 mA
RWM
- 6 100 µA
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 8 18 nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 23 30 ns
-dIF/dt = 100 A/µs
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs - 0.7 - V
December 1998 2 Rev 1.000
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