Philips byq30ex DATASHEETS
Philips Semiconductors Product specification
Rectifier diodes BYQ30EX series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.95 V
• Reverse surge capability
a1
13
• High thermal cycling performance I
• Isolated mounting tab
k
2
GENERAL DESCRIPTION PINNING SOT186A
a2
= 16 A
O(AV)
I
≤ 0.2 A
RRM
trr ≤ 25 ns
Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers
case
in high frequency switched mode 1 anode 1
power supplies.
2 cathode
The BYQ30EX series is supplied in
the conventional leaded SOT186A 3 anode 2
package.
tab isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYQ30EX -150 -200
V
V
V
I
O(AV)
I
FRM
RRM
RWM
R
Peak repetitive reverse voltage - 150 200 V
Crest working reverse voltage - 150 200 V
Continuous reverse voltage - 150 200 V
Average rectified output current square wave - 16 A
(both diodes conducting)
1
δ = 0.5; Ths ≤ 59 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
per diode Ths ≤ 59 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 100 A
current per diode t = 8.3 ms - 110 A
sinusoidal; with reapplied
V
I
RRM
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
RWM(max)
per diode
I
RSM
T
T
stg
j
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
1 Neglecting switching and reverse current losses.
October 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes BYQ30EX series
ultrafast, rugged
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance junction to with heatsink compound - - 5.0 K/W
heatsink without heatsink compound - - 7.0 K/W
Thermal resistance junction to in free air - 55 - K/W
ambient
Forward voltage IF = 8 A; Tj = 150˚C - 0.83 0.95 V
IF = 16 A; Tj = 150˚C - 1.0 1.15 V
IF = 16 A; - 0.98 1.25
Reverse current VR = V
VR = V
; Tj = 100 ˚C - 0.3 0.6 mA
RWM
RWM
-230µA
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 11 nC
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns
-dIF/dt = 100 A/µs
Peak reverse recovery current IF = 1 A; VR ≥ 30 V; - 1.0 2 A
-dIF/dt = 50 A/µs; Tj = 100 ˚C
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
October 1998 2 Rev 1.200
Loading...