Philips BYQ30EB-100 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYQ30EB series
ultrafast, rugged
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rugged dual rectifier diodes in a
plastic envelope suitable for surface BYQ30EB- 100 150 200
mounting, featuring low forward V
RRM
voltage drop, ultra-fast recovery voltage
times and soft recovery V
characteristic. These devices can I
F
O(AV)
withstand reverse voltage transients diodes conducting)
and have guaranteed reverse surge t
and ESD capability. They are I
rr
RRM
intended for use in switched mode current per diode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Repetitive peak reverse 100 150 200 V
Forward voltage 0.95 0.95 0.95 V
Output current (both 16 16 16 A
Reverse recovery time 25 25 25 ns
Repetitive peak reverse 0.2 0.2 0.2 A
PIN DESCRIPTION
mb
1 no connection
k a
2 cathode
3 anode
mb cathode
2
13
tab 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
Repetitive peak reverse voltage - 100 150 200 V
Crest working reverse voltage - 100 150 200 V
Continuous reverse voltage - 100 150 200 V
Output current (both diodes square wave - 16 A
conducting)
RMS forward current - 23 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
per diode Tmb ≤ 104 ˚C
Non-repetitive peak forward t = 10 ms - 100 A
current per diode t = 8.3 ms - 110 A
I2tI
I
RRM
I
RSM
T
stg
T
j
2
t for fusing t = 10 ms - 50 A2s
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1
δ = 0.5; Tmb ≤ 104 ˚C
sinusoidal; with reapplied
V
RWM(max)
-100 -150 -200
1 Neglecting switching and reverse current losses.
October 1997 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diodes BYQ30EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to per diode - - 3.0 K/W
mounting base both diodes conducting - - 2.5 K/W
R
th j-a
Thermal resistance junction to minimum footprint, FR4 board - 50 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage (per diode) IF = 8 A; Tj = 150˚C - 0.83 0.95 V
IF = 16 A; Tj = 150˚C - 1.0 1.15 V
IF = 16 A; - 0.98 1.25
I
R
Reverse current (per diode) VR = V
VR = V
; Tj = 100 ˚C - 0.3 0.6 mA
RWM
RWM
-230µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
t
rr
I
rrm
V
fr
Reverse recovery charge (per IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 11 nC
diode)
Reverse recovery time (per IF = 1 A; VR ≥ 30 V; - 20 25 ns
diode) -dIF/dt = 100 A/µs
Peak reverse recovery current IF = 1 A; VR ≥ 30 V; - 1.0 2 A
(per diode) -dIF/dt = 50 A/µs; Tj = 100 ˚C
Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs-1-V
diode)
October 1997 2 Rev 1.000
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