Philips BYQ28X-200, BYQ28X-150 Datasheet
Philips Semiconductors Product specification
Rectifier diodes BYQ28X series
ultrafast
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated dual epitaxial SYMBOL PARAMETER MAX. MAX. MAX. UNIT
rectifier diodes in a full pack plastic
envelope, featuring low forward BYQ28X- 100 150 200
voltage drop, ultra-fast recovery V
RRM
times and soft recovery voltage
characteristic. They are intended for V
useinswitchedmode powersupplies I
F
O(AV)
andhighfrequency circuits ingeneral diodes conducting)
where low conduction and switching t
losses are essential.
rr
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak reverse 100 150 200 V
Forward voltage 0.895 0.895 0.895 V
Output current (both 10 10 10 A
Reverse recovery time 25 25 25 ns
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
case
a1
a2
13
3 anode 2 (a)
k
case isolated
123
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-100 -150 -200
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
I2tI
T
stg
T
j
Repetitive peak reverse voltage - 100 150 200 V
Crest working reverse voltage - 100 150 200 V
Continuous reverse voltage
Output current (both diodes square wave - 10 A
conducting)
2
1
δ = 0.5; Ths ≤ 92 ˚C
- 100 150 200 V
sinusoidal - 9 A
a = 1.57; Ths ≤ 95 ˚C
RMS forward current - 14 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 10 A
per diode Ths ≤ 92 ˚C
Non-repetitive peak forward t = 10 ms - 50 A
current per diode t = 8.3 ms - 55 A
sinusoidal; with reapplied
V
2
t for fusing t = 10 ms - 12.5 A2s
RWM(max)
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1 Ths ≤ 148˚C for thermal stability.
2 Neglecting switching and reverse current losses
August 1996 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diodes BYQ28X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance junction to with heatsink compound - - 5.7 K/W
heatsink without heatsink compound - - 6.7 K/W
Thermal resistance junction to in free air - 55 - K/W
ambient
Forward voltage (per diode) IF = 5 A; Tj = 150˚C - 0.80 0.895 V
IF = 5 A - 0.95 1.10 V
IF = 10 A - 1.10 1.25 V
Reverse current (per diode) VR = V
VR = V
; Tj = 100 ˚C - 0.1 0.2 mA
RWM
RWM
-210µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Q
s
t
rr1
t
rr2
V
fr
Reverse recovery charge (per IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 9 nC
diode)
Reverse recovery time (per IF = 1 A; VR ≥ 30 V; - 15 25 ns
diode) -dIF/dt = 100 A/µs
Reverse recovery time (per IF = 0.5 A to IR = 1 A; I
diode)
= 0.25 A - 10 20 ns
rec
Forward recovery voltage (per IF = 1 A; dIF/dt = 10 A/µs-1-V
diode)
August 1996 2 Rev 1.000
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